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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S403ATMA1

Name: IPB80N04S403ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S403ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3-2

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Product details

Overview

IPB80N04S403ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 40 V V_DS, 3.3 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery protection circuits.

For engineers reviewing the IPB80N04S403ATMA1 datasheet, IPB80N04S403ATMA1 pinout, IPB80N04S403ATMA1 application, or IPB80N04S403ATMA1 equivalent, key selection criteria include its 3.3 mΩ on-resistance, 80 A continuous drain current capability, 1.6 K/W junction-to-case thermal resistance, and integrated avalanche-rated body diode with 200 mJ single-pulse energy rating.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while its 51–66 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The device integrates a co-packaged freewheeling diode with 0.9–1.3 V forward voltage at 80 A and 43 ns reverse recovery time, enabling synchronous rectification and bidirectional current handling in half-bridge topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient overvoltage tolerance.
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages.
I_D continuous	80 A at T_C = 25 °C - Supports high-current loads such as starter relays, HVAC blowers, and EPS motor drivers.
E_AS	200 mJ single-pulse - Withstands inductive switching surges without failure in motor drive and solenoid control.
R_thJC	1.6 K/W - Allows direct heatsink mounting for thermal management in space-constrained engine bay modules.
Q_g total	51–66 nC - Determines gate driver strength requirement; enables <100 ns switching transitions with 1 A driver.
t_r/t_f	12 ns / 16 ns - Supports >500 kHz PWM frequency in compact DC-DC converters with minimal switching loss.

Pinout & Package

IPB80N04S403ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires ≥6 V to fully enhance; threshold range 2.0–4.0 V ensures noise immunity.
Pin 2 (Drain)	High-side switch node	Exposed copper tab - electrically connected to drain; must be soldered to PCB copper pour for thermal dissipation.
Pin 3 (Source)	Power return path	Provides low-impedance return for load current; referenced to controller ground in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including temperature cycling, humidity, and mechanical shock per ISO/TS 16949.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test to 200 mJ, ensuring reliability in inductive load switching.
MSL1 reflow rating	Withstands peak reflow temperatures up to 260 °C, compatible with standard lead-free SMT assembly processes.
Green Product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU and China RoHS II.
OptiMOS™-T2 architecture	Trench-based silicon design reduces R_DS(on) × Q_g figure-of-merit by ~25% vs. prior generation, improving efficiency at high frequency.

Applications

Automotive Body Control Module (BCM)

12 V Automotive DC-DC Converter

Use Scenario: Switching of high-current loads such as headlamps, fog lamps, and seat heaters in centralized vehicle power distribution units.

IC Role / Device Role / Timing Role: High-side load switch controlling 80 A peak current with fast turn-on/turn-off to minimize in-rush and arc suppression.

Use Value: Low 3.3 mΩ R_DS(on) eliminates need for parallel devices, reducing BOM count and PCB area by 40% vs. 5 mΩ alternatives.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz PWM with tight dead-time control to prevent shoot-through.

Use Value: 12 ns rise time and 51 nC Q_g enable <50 ns minimum on-time, supporting high conversion ratios at high frequency.

Electric Power Steering (EPS) Motor Driver

Battery Disconnect Switch (BMS)

Use Scenario: Half-bridge leg in 3-phase inverter driving brushed or brushless EPS motors requiring 80 A continuous phase current.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch with integrated body diode for regenerative braking current recirculation.

Use Value: 43 ns t_rr and 44 nC Q_rr reduce diode switching loss by >30% vs. discrete diode solutions, lowering thermal stress during torque reversal.

Use Scenario: Main contactor replacement in 12 V battery management systems for hybrid/electric vehicles, enabling controlled isolation during fault conditions.

IC Role / Device Role / Timing Role: Solid-state disconnect switch rated for 80 A continuous and 320 A pulsed current, with 200 mJ avalanche energy absorption.

Use Value: 175 °C T_j rating and 1.6 K/W R_thJC allow operation in sealed enclosures without forced air cooling, simplifying system packaging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S4-03	Same die, TO-220-3-1 through-hole package; R_DS(on) max = 3.7 mΩ; R_thJC = 1.5 K/W	Preferred for prototyping, manual assembly, or legacy through-hole designs where thermal mass aids transient handling	Select when board-level rework, hand-soldering, or higher thermal inertia is required.
IPB80N04S4-03R	Same D²PAK package but with reduced R_DS(on) (2.8–3.3 mΩ typ); identical pinout and footprint	Targeted at next-gen automotive modules demanding <2.5 W conduction loss at 80 A	Choose for new designs where 0.5 mΩ lower R_DS(on) justifies minor cost premium and tighter process control.

Compared with IPP80N04S4-03 and IPB80N04S4-03R, IPB80N04S403ATMA1 offers optimal balance of surface-mount manufacturability, proven automotive qualification, and validated thermal performance-making it the default choice for volume production in engine control and chassis electronics.

Availability

IPB80N04S403ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering inverters, and battery disconnect switches requiring stable component supply across multi-year vehicle programs.

Supply support for IPB80N04S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-current, high-reliability automotive power switching applications where low R_DS(on), robust avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for IPB80N04S403ATMA1 at 100 °C case temperature?

The device supports 80 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as confirmed in the Absolute Maximum Ratings table. This rating is limited by bondwire capacity-not thermal limits-and remains constant from 25 °C to 100 °C case temperature.

Does IPB80N04S403ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode rated for 80 A continuous forward current and 320 A pulsed current. At 25 °C and 80 A, V_SD is 0.9–1.3 V, with 43 ns reverse recovery time and 44 nC reverse recovery charge-critical for synchronous rectification and regenerative braking.

Is IPB80N04S403ATMA1 suitable for high-frequency PWM applications above 200 kHz?

Yes-its 12 ns rise time, 16 ns fall time, and 51–66 nC total gate charge enable clean switching at 300–500 kHz in buck and half-bridge topologies. Gate plateau voltage of 5.8 V ensures stable Miller region control during fast transitions.

How does the PG-TO263-3-2 package affect thermal performance compared to TO-220?

The D²PAK package provides 1.6 K/W junction-to-case thermal resistance, slightly higher than TO-220's 1.5 K/W, but enables superior PCB-level heat spreading via large copper drain pad. When mounted on 6 cm² FR4 copper, R_thJA drops to 40 K/W-outperforming TO-220 in compact SMT layouts.

IPB80N04S403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S403ATMA1 FAQ

1.How can I place an order for IPB80N04S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S403ATMA1 reliable?

The price and inventory of IPB80N04S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S403ATMA1?

IPB80N04S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S403ATMA1?

For technical support, including IPB80N04S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S403ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S403ATMA1?

All IPB80N04S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S403ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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