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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S404ATMA1

Name: IPB80N04S404ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S404ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S404ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S404ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3-2

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Product details

Overview

IPB80N04S404ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 4.2 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive motor control, DC-DC converters, and high-current switching in engine management systems.

For engineers reviewing the IPB80N04S404ATMA1 datasheet, IPB80N04S404ATMA1 pinout, IPB80N04S404ATMA1 application, or IPB80N04S404ATMA1 equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 33–43 nC total gate charge, 175 °C maximum operating temperature, and SMD-compatible TO263 footprint with integrated Schottky body diode.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive power stages. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under transient conditions.

The MOSFET integrates a fast-recovery body diode with 39 ns reverse recovery time and 35 nC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V automotive battery systems with margin for load dump transients.
R_DS(on) max	4.2 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for thermally constrained PCB layouts.
I_D continuous	80 A at T_C = 25 °C - Supported by bondwire-limited current rating and 2.1 K/W R_thJC for direct heatsink mounting.
E_AS	100 mJ single-pulse avalanche energy - Ensures ruggedness against inductive switching surges in motor drive and solenoid control.
Q_g	33–43 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz SMPS designs.
t_r/t_f	12 ns rise / 12 ns fall - Supports fast edge rates with minimal switching loss when driven by ≥2 A peak gate drivers.
V_SD	0.9–1.3 V at I_F = 80 A - Low forward voltage of integrated body diode reduces freewheeling loss in buck and half-bridge configurations.

Pinout & Package

IPB80N04S404ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; requires ≤20 V absolute max rating per datasheet.
Pin 2 (Drain)	High-side power node	Connected to PCB copper area ≥6 cm² for thermal dissipation; electrically tied to exposed metal tab.
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be low-inductance layout for EMI control.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control units and transmission modules.
100% avalanche tested	Each unit subjected to single-pulse I_AS = 80 A stress, ensuring reliability in inductive load switching.
MSL1 reflow rating	Withstands peak solder reflow up to 260 °C, enabling standard lead-free assembly without moisture sensitivity concerns.
OptiMOS™-T2 trench architecture	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 200–300 kHz DC-DC converters.
RoHS-compliant green product	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE.

Applications

Automotive Engine Control Unit (ECU)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for fuel injector driver with 12 V supply and 10 ms pulse width.

IC Role / Device Role / Timing Role: Power switch controlling coil energization; operates in linear and saturated regions during PWM commutation.

Use Value: 4.2 mΩ R_DS(on) limits resistive heating during sustained injection pulses, while 175 °C T_j rating ensures operation near hot engine blocks.

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch with body diode conducting freewheeling current during high-side off-time.

Use Value: 39 ns t_rr and 35 nC Q_rr minimize reverse recovery loss, increasing conversion efficiency above 95% at 5 kW.

Industrial Motor Starter Module

On-Board Charger (OBC) Input Stage

Use Scenario: Solid-state relay replacement for 3-phase BLDC motor phase leg in HVAC blower system.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 80 A peak phase current with 20 kHz PWM.

Use Value: 2.1 K/W R_thJC allows direct heatsink mounting without thermal interface material, reducing BOM count and assembly cost.

Use Scenario: AC-DC front-end PFC switch in 6.6 kW on-board charger for EVs.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost topology.

Use Value: 33–43 nC Q_g enables efficient gate driving with low-power isolated drivers, reducing auxiliary supply loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S4-04	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (no PCB cooling area)	Preferred for prototyping or low-volume industrial controls where manual soldering is acceptable	Select for ease of hand-soldering or legacy board redesigns requiring through-hole footprint.
IPI80N04S4-04	Same die, PG-TO262-3-1 SMD package; identical R_DS(on) and thermal specs but different leadframe geometry	Used in space-constrained automotive modules where TO262 offers mechanical stability over D²PAK	Choose when board-level vibration resistance and automated placement yield outweigh minor thermal margin differences.

Compared with IPP80N04S4-04 and IPI80N04S4-04, IPB80N04S404ATMA1 provides optimal thermal performance via its D²PAK package's large copper drain pad, making it preferred for high-power-density automotive applications where PCB-level heatsinking is feasible.

Availability

IPB80N04S404ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid DC-DC converters, and industrial motor starter modules requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB80N04S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, low-voltage automotive power switching with emphasis on avalanche ruggedness and thermal reliability.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S404ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent oxide damage. For reliable 12 V system interfacing, a 10 V gate drive is recommended to ensure full enhancement while maintaining 10 V margin below the limit.

Is IPB80N04S404ATMA1 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes - its 39 ns reverse recovery time, 35 nC Q_rr, and 0.9–1.3 V body diode forward voltage enable efficient synchronous rectification. When paired with appropriate gate timing control, it reduces conduction loss by ~30% versus external Schottky diodes at 80 A.

Does this MOSFET require a heatsink when operating at 80 A continuous current?

Yes - at 80 A and 10 V V_GS, conduction loss exceeds 26 W. With R_thJC = 2.1 K/W, even a modest 10 K/W heatsink is required to maintain T_j ≤ 175 °C. PCB copper area ≥6 cm² is mandatory per datasheet thermal test condition.

How does the avalanche rating impact design robustness in motor drive applications?

Its 100 mJ single-pulse E_AS rating allows safe clamping of inductive kickback from 80 A motor windings without external snubbers. This eliminates need for TVS diodes in brushed DC or stepper motor H-bridge outputs, simplifying layout and improving long-term reliability.

IPB80N04S404ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3440 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S404ATMA1 FAQ

1.How can I place an order for IPB80N04S404ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S404ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S404ATMA1 reliable?

The price and inventory of IPB80N04S404ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S404ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S404ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S404ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S404ATMA1?

IPB80N04S404ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S404ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S404ATMA1?

For technical support, including IPB80N04S404ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S404ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S404ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S404ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S404ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S404ATMA1?

All IPB80N04S404ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S404ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S404ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S404ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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