Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S4L04ATMA1

Name: IPB80N04S4L04ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S4L04ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N04S4L04ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S4L04ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:661

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N04S4L04ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS®-T2 power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 4.0 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and AEC qualification for automotive use. It delivers high-current switching in DC-DC converters and motor control stages.

For engineers reviewing the IPB80N04S4L04ATMA1 datasheet, IPB80N04S4L04ATMA1 pinout, IPB80N04S4L04ATMA1 application, or IPB80N04S4L04ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (100 mJ), thermal resistance (R_thJC = 2.1 K/W), and AEC-Q101 compliance status.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive and industrial power stages. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining low leakage (I_DSS ≤ 1 µA at 85 °C).

The device integrates a fast-recovery body diode (t_rr = 39 ns, Q_rr = 35 nC) and supports high pulsed currents (I_D,pulse = 320 A), making it suitable for synchronous rectification and bidirectional current handling in H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V battery systems
R_DS(on) max @ V_GS=10 V	4.0 mΩ - Enables ≤ 25.6 W conduction loss at 80 A continuous current
I_D continuous @ T_C=25°C	80 A - Sustained current capability with external heatsinking
E_AS single pulse	100 mJ - Avalanche ruggedness for inductive load switching without snubbers
R_thJC	2.1 K/W - Thermal path efficiency enabling high-power density PCB mounting
Q_g total	46–60 nC - Gate charge defining drive strength requirement for <100 ns switching
t_r/t_f	12 ns / 31 ns - Fast edge rates supporting >500 kHz PWM operation

Pinout & Package

IPB80N04S4L04ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-impedance driver due to 60 nC Q_g
Pin 2 (Drain)	High-side power node	Connected to PCB copper area ≥6 cm² for thermal dissipation and low-inductance return
Pin 3 (Source)	Reference node	Serves as local ground reference for gate drive and current sensing

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit verified for single-pulse E_AS ≥ 100 mJ at production test
MSL1 rating (260°C peak reflow)	Compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns
RoHS-compliant green product	Meets EU Directive 2011/65/EU with no restricted substances above threshold limits
Optimized body diode	Q_rr = 35 nC and t_rr = 39 ns enable efficient synchronous rectification

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in vehicle infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency.

Use Value: 4.0 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 6 mΩ devices, improving converter efficiency at full load.

Use Scenario: Bidirectional motor current control in 12 V EPS actuator modules.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with fast body diode recovery.

Use Value: 39 ns t_rr and 35 nC Q_rr minimize shoot-through risk and reverse recovery loss during direction reversal.

Industrial BLDC Motor Drives

Server VRM High-Current Phases

Use Scenario: 24 V/48 V brushless DC motor inverters for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Phase-leg low-side switch with integrated freewheeling path.

Use Value: 175 °C T_j,max and 2.1 K/W R_thJC support sustained 80 A operation in compact, sealed enclosures.

Use Scenario: Multiphase buck converter output stage in AI accelerator server power supplies.

IC Role / Device Role / Timing Role: High-current power stage switch delivering up to 120 A per phase with paralleled units.

Use Value: 320 A I_D,pulse rating allows short-term overload tolerance during CPU/GPU transient events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S4-04	R_DS(on) max = 4.3 mΩ at V_GS = 10 V; non-AEC qualified; same PG-TO263-3-2 package	Not validated for automotive temperature cycling or humidity testing	Select when AEC-Q101 compliance is not required and cost optimization is prioritized
IRF8721TRPBF	R_DS(on) max = 5.2 mΩ at V_GS = 4.5 V; 30 V V_DS; SO-8 package; no avalanche rating	Limited to 30 V systems; unsuitable for 40 V transients or automotive load-dump conditions	Choose only for space-constrained 3.3 V–5 V logic-driven 30 V applications with no avalanche stress

Compared with IPB80N04S4L04ATMA1, IPB80N04S4-04 trades AEC qualification for marginal R_DS(on) increase, while IRF8721TRPBF offers smaller footprint but sacrifices voltage rating, ruggedness, and thermal performance-making the original optimal for automotive-grade 40 V high-current switching.

Availability

IPB80N04S4L04ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and industrial BLDC motor drives requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB80N04S4L04ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive power systems and industrial motor controls.

FAQ

Is IPB80N04S4L04ATMA1 suitable for 48 V mild-hybrid automotive systems?

No. Its 40 V V_DS rating is insufficient for 48 V system transients, which can exceed 60 V during load dump. It is designed for 12 V/24 V architectures where maximum bus voltage remains ≤40 V under all operating and fault conditions.

What is the recommended gate resistor value for 300 kHz PWM operation?

A 3.5 Ω gate resistor is validated in the datasheet for V_DD = 32 V, I_D = 80 A, achieving t_r = 12 ns and t_f = 31 ns. For 300 kHz, this value balances switching speed against gate driver current capability and EMI generation.

Does the device require a Kelvin source connection for accurate current sensing?

No. The PG-TO263-3-2 package does not provide a dedicated Kelvin source pin. Accurate high-side current sensing requires external shunt resistors or isolated current sensors; source-sense configurations are not supported.

Can IPB80N04S4L04ATMA1 be paralleled with identical units for higher current capacity?

Yes. Its positive temperature coefficient of R_DS(on) (see Fig. 6) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal interface are required to maintain balanced conduction across paralleled devices.

IPB80N04S4L04ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S4L04ATMA1 FAQ

1.How can I place an order for IPB80N04S4L04ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S4L04ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S4L04ATMA1 reliable?

The price and inventory of IPB80N04S4L04ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S4L04ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S4L04ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S4L04ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S4L04ATMA1?

IPB80N04S4L04ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S4L04ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S4L04ATMA1?

For technical support, including IPB80N04S4L04ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S4L04ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S4L04ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S4L04ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S4L04ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S4L04ATMA1?

All IPB80N04S4L04ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S4L04ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S4L04ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S4L04ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …