Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S209ATMA2

Name: IPB80N06S209ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S209ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N06S209ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S209ATMA2.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:777

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N06S209ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS® power MOSFET designed for high-current, low-voltage switching in automotive and industrial power stages. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 7.6–9.1 mΩ R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation - used in 48 V battery disconnect and motor control modules.

For engineers reviewing the IPB80N06S209ATMA2 datasheet, IPB80N06S209ATMA2 pinout, IPB80N06S209ATMA2 application, or IPB80N06S209ATMA2 equivalent, key selection criteria include avalanche energy rating (370 mJ), gate charge profile (Q_g = 60–80 nC), thermal resistance (R_thJC = 0.8 K/W), and SMD-compatible PG-TO263-3-2 package compatibility.

Technical Context

This device operates as a unidirectional high-side or low-side switch in DC-DC converters and motor drivers, leveraging its 55 V breakdown voltage and robust 100% avalanche-tested structure. Its gate threshold voltage (2.1–4.0 V) enables TTL/CMOS-level drive compatibility while maintaining noise immunity under transient conditions.

The MOSFET features optimized dynamic parameters including C_iss = 2360 pF, C_oss = 610 pF, and Q_gd/Q_gs ratio of ~2:1 - supporting fast, controllable switching with reduced Miller-induced shoot-through risk in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15 % overvoltage margin
R_DS(on) max	9.1 mΩ @ V_GS = 10 V, I_D = 50 A - enables <1 W conduction loss at 80 A in optimized thermal layout
I_D continuous	80 A @ T_C = 25 °C - rated for sustained high-current loads without derating below 100 °C case temperature
E_AS	370 mJ - withstands single-pulse inductive energy without failure in motor freewheeling events
Q_g	60–80 nC - determines gate driver power requirement and switching speed trade-off in 100 kHz+ applications
R_thJC	0.8 K/W - allows direct heatsink mounting for efficient junction-to-case heat transfer in compact enclosures
T_j max	175 °C - enables operation in under-hood automotive environments without thermal shutdown

Pinout & Package

IPB80N06S209ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain-connected tab for thermal and electrical performance. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 0–10 V logic-level signal; requires ≤80 nC total charge to fully enhance channel
Pin 2 (Drain)	High-side power node	Internally connected to exposed copper tab; must be soldered to PCB copper pour for thermal and current path integrity
Pin 3 (Source)	Reference return	Serves as local ground reference for gate drive; critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS = 370 mJ - ensures field reliability in inductive load switching
Ultra-low R_DS(on)	7.6 mΩ typ. @ 10 V - reduces conduction losses by >30 % vs. legacy 10 mΩ devices in 48 V systems
MSL1 reflow rating	Rated for peak reflow up to 260 °C - compatible with standard lead-free PCB assembly processes
Integrated body diode	V_SD = 0.9–1.3 V @ 80 A - supports synchronous rectification and freewheeling with controlled reverse recovery (t_rr = 50–63 ns)

Applications

Automotive Battery Disconnect

Industrial BLDC Motor Inverter

Use Scenario: High-side main contactor replacement in 48 V mild-hybrid battery management systems.

IC Role / Device Role / Timing Role: Power MOSFET switch controlling bidirectional battery isolation during fault or sleep mode.

Use Value: 80 A rating and 370 mJ avalanche capability eliminate need for external snubbers during load dump transients.

Use Scenario: Low-side switching in 3-phase inverter stage for HVAC blowers and pump drives.

IC Role / Device Role / Timing Role: Fast-switching power stage element enabling 20–50 kHz PWM with minimal switching loss.

Use Value: Low Q_g/Q_gd ratio and 29 ns rise time support clean edge control and reduced EMI generation.

Server PSU OR-ing FET

EV Onboard Charger Input Stage

Use Scenario: Hot-swap redundancy in 12 V intermediate bus architecture for AI accelerators.

IC Role / Device Role / Timing Role: Reverse-polarity protected OR-ing switch ensuring seamless power source transition.

Use Value: 175 °C junction rating and 0.8 K/W R_thJC sustain full 80 A load under sustained 70 °C ambient server chassis conditions.

Use Scenario: AC-DC front-end PFC switch in bi-directional onboard chargers for plug-in hybrids.

IC Role / Device Role / Timing Role: Critical switching element in boost-type active PFC stage operating at 65–100 kHz.

Use Value: Tight R_DS(on) distribution (7.3–8.8 mΩ SMD version) ensures consistent thermal sharing across parallel FET arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2-09	PG-TO220-3-1 through-hole package; identical R_DS(on), V_DS, and I_D ratings	Preferred for prototyping, manual assembly, or legacy board designs requiring leaded mounting	Select when mechanical robustness or serviceability outweighs thermal density and automated assembly needs
IPB80N06S4-05	Newer OptiMOS™ 4 generation; lower R_DS(on) (5.0 mΩ max), higher Q_g (105 nC), same 55 V rating	Better efficiency in continuous conduction mode but demands stronger gate driver due to higher charge	Choose for new designs targeting <0.5 W conduction loss at 80 A, accepting increased gate drive complexity

Compared with IPP80N06S2-09, IPB80N06S209ATMA2 offers superior thermal performance via SMD package and lower PCB footprint; versus IPB80N06S4-05, it trades 2.3 mΩ higher on-resistance for 25 nC lower gate charge - simplifying driver design in cost-sensitive 48 V systems.

Availability

IPB80N06S209ATMA2 is available at Aetrix Electronics and suitable for automotive battery management, industrial motor drives, server power OR-ing, and EV onboard charger applications requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB80N06S209ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, low-voltage DC switching in automotive and industrial power conversion where avalanche ruggedness and thermal efficiency are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S209ATMA2?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 0–10 V for reliable enhancement, with 12 V clamping advised if using non-regulated gate drivers.

Is IPB80N06S209ATMA2 suitable for synchronous rectification?

Yes - its integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 50–63 ns, enabling use as a freewheeling element in buck or LLC topologies. However, external Schottky or MOSFET synchronous rectifiers are preferred for <0.5 V forward drop and zero reverse recovery loss.

How does the PG-TO263-3-2 package affect thermal design?

The PG-TO263-3-2 exposes the drain on the underside copper tab, requiring direct soldering to ≥6 cm² of 70 µm thick PCB copper for optimal R_thJA = 40 K/W. Without adequate copper area, R_thJA degrades to 62 K/W - limiting continuous current to ~35 A at 70 °C ambient.

Does IPB80N06S209ATMA2 require external avalanche protection?

No - every unit undergoes 100% single-pulse avalanche testing at E_AS = 370 mJ, validating ruggedness against inductive energy spikes in motor and solenoid loads. External TVS or RC snubbers remain optional for multi-pulse or repetitive stress scenarios beyond datasheet limits.

IPB80N06S209ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S209ATMA2 FAQ

1.How can I place an order for IPB80N06S209ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S209ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S209ATMA2 reliable?

The price and inventory of IPB80N06S209ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S209ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S209ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S209ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S209ATMA2?

IPB80N06S209ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S209ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S209ATMA2?

For technical support, including IPB80N06S209ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S209ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S209ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S209ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S209ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S209ATMA2?

All IPB80N06S209ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S209ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S209ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S209ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …