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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2H5ATMA2

Name: IPB80N06S2H5ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S2H5ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2H5ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2H5ATMA2.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2H5ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS® power MOSFET designed for high-current, low-voltage switching in automotive and industrial DC-DC converters and motor control stages. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 4.6 mΩ typical R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation.

For engineers reviewing the IPB80N06S2H5ATMA2 datasheet, IPB80N06S2H5ATMA2 pinout, IPB80N06S2H5ATMA2 application, or IPB80N06S2H5ATMA2 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche energy rating (700 mJ), gate charge profile (Q_g = 116–155 nC), thermal resistance (R_thJC = 0.5 K/W), and TO263-3 package suitability for high-power PCB layouts.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction loss and fast switching in synchronous rectification and H-bridge configurations. Its 5.2 mΩ max R_DS(on) at 100% production test ensures consistent on-resistance across automotive temperature range (−55 to +175 °C).

Dynamic performance is defined by C_iss = 4400 pF, C_oss = 1100 pF, and Q_gd/Q_gs ratio of ~2.1, supporting efficient hard-switching up to 100 kHz. The integrated body diode features t_rr = 60–75 ns and Q_rr = 130–163 nC, enabling robust freewheeling in inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V industrial rails.
R_DS(on) typ.	4.6 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for thermal management in compact modules.
I_D cont.	80 A @ T_C = 25 °C - Sustained current capability verified under real heatsink conditions, not die-limited.
E_AS	700 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive turn-off transients without external snubbers.
Q_g	116–155 nC - Gate drive energy requirement directly impacts driver IC selection and switching loss in PWM stages.
R_thJC	0.5 K/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for high-power density designs.
t_r/t_f	23 ns / 22 ns - Fast edge rates reduce switching transition time, lowering overlap losses in bridge topologies.

Pinout & Package

IPB80N06S2H5ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal relief. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives 10 V logic-level drive; threshold voltage 2.1–4.0 V allows compatibility with 3.3 V/5 V controllers via gate drivers.
Drain (Pin 2, tab)	High-side switch node	Exposed copper tab provides primary thermal path to PCB copper pour; electrically connected to drain potential.
Source (Pin 3)	Reference node	Serves as return path for load current and gate drive reference; requires low-inductance layout to minimize shoot-through risk.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse E_AS screening at 700 mJ, ensuring field reliability in unclamped inductive switching events.
Green package	Lead-free, halogen-free construction compliant with RoHS and ELV directives; MSL1 rated for 260 °C peak reflow.
Ultra-low R_DS(on)	4.6 mΩ typ. reduces I²R losses by >30% vs. prior-generation 60 V MOSFETs, directly improving system efficiency at 40–80 A loads.
175 °C operation	Extended junction temperature rating supports sealed enclosures and high-ambient environments without derating penalties.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 100–200 kHz with forced-air cooling.

Use Value: 4.6 mΩ R_DS(on) limits conduction loss to <3.7 W at 80 A, enabling >96% peak efficiency without liquid cooling.

Use Scenario: Three-phase inverter stage for 3 kW BLDC motor in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge with 15 kHz PWM.

Use Value: 700 mJ E_AS withstands flyback energy during emergency stop, eliminating need for external clamping diodes.

Server VRMs

Renewable Energy Inverters

Use Scenario: Multiphase CPU voltage regulator delivering up to 300 A at 0.8–1.2 V in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–500 kHz interleaved buck stage with micro-ohm PCB routing.

Use Value: 0.5 K/W R_thJC enables direct thermal coupling to copper-backed heatsinks, maintaining T_j < 110 °C at full load.

Use Scenario: MPPT boost stage in 5 kW solar string inverter interfacing 100–600 V PV arrays.

IC Role / Device Role / Timing Role: Main switching transistor in non-isolated boost converter operating at 40 kHz with high dv/dt.

Use Value: 60–75 ns t_rr and low Q_rr minimize reverse recovery loss and EMI generation during diode commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2H5XTMA1	TO-220-3 package; identical die, higher R_thJA (62 K/W vs. 40 K/W on PCB); same R_DS(on), Q_g, and E_AS.	Preferred for prototyping or low-volume through-hole assembly; unsuitable for high-density SMT power modules.	Select when mechanical mounting constraints prohibit SMD packages or when heatsink interface requires screw-down TO-220 mounting.
IPB80N06S4-04	Newer OptiMOS 4 generation; 3.8 mΩ typ. R_DS(on); 135 nC Q_g; same 55 V rating and AEC-Q101 qualification.	Better efficiency at high frequency (>200 kHz); slightly higher gate drive power due to increased Q_g.	Choose for new designs targeting <1 W conduction loss at 80 A or requiring extended lifetime in high-temp ambient.

Compared with IPP80N06S2H5XTMA1, IPB80N06S2H5ATMA2 offers superior thermal performance in SMT layouts; versus IPB80N06S4-04, it trades 0.8 mΩ higher R_DS(on) for proven field reliability and lower gate charge, simplifying driver design in 100–150 kHz applications.

Availability

IPB80N06S2H5ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply and long-term lifecycle support.

Supply support for IPB80N06S2H5ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems where thermal robustness and avalanche immunity are critical.

FAQ

Is IPB80N06S2H5ATMA2 pin-compatible with IPP80N06S2H5XTMA1?

No. IPB80N06S2H5ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount packaging with drain-tab-down orientation, while IPP80N06S2H5XTMA1 uses PG-TO220-3-1 through-hole packaging. Mechanical footprint, soldering method, and thermal interface differ fundamentally-PCB layout and heatsink mounting must be redesigned for interchange.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz PWM with 155 nC total gate charge and 12 V drive, a 10 Ω gate resistor limits peak current to ~1.2 A and achieves ~45 ns effective rise/fall times. Values above 15 Ω increase switching losses significantly; below 5 Ω risks ringing and overshoot without proper layout damping.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has no requirement for negative V_GS during turn-off. Its gate threshold voltage (2.1–4.0 V) and 20 V absolute maximum rating allow safe operation with 0 V to 10 V or 0 V to 12 V gate drive. Negative bias is unnecessary and may accelerate gate oxide wear if applied repeatedly.

Can IPB80N06S2H5ATMA2 replace older IPB80N06S2-07 in existing designs?

Yes, with verification. Both share identical PG-TO263-3-2 package and pinout, but the H5 version improves R_DS(on) (5.5 mΩ max vs. 7.0 mΩ max) and avalanche energy (700 mJ vs. 500 mJ). Thermal and electrical margins improve, though gate charge increases slightly (155 nC vs. 140 nC); confirm driver capability and layout parasitics remain within spec.

IPB80N06S2H5ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2H5ATMA2 FAQ

1.How can I place an order for IPB80N06S2H5ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2H5ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2H5ATMA2 reliable?

The price and inventory of IPB80N06S2H5ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2H5ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2H5ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2H5ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2H5ATMA2?

IPB80N06S2H5ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2H5ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2H5ATMA2?

For technical support, including IPB80N06S2H5ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2H5ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S2H5ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2H5ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2H5ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2H5ATMA2?

All IPB80N06S2H5ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2H5ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2H5ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S2H5ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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