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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2L06ATMA2

Name: IPB80N06S2L06ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S2L06ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L06ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L06ATMA2.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L06ATMA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low 4.8–6.3 mΩ R_DS(on) at V_GS = 10 V, with 100% avalanche energy rating (530 mJ) and AEC-Q101 qualification. It is used in DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB80N06S2L06ATMA2 datasheet, IPB80N06S2L06ATMA2 pinout, IPB80N06S2L06ATMA2 application, or IPB80N06S2L06ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, thermal resistance (R_thJC = 0.6 K/W), avalanche ruggedness, gate charge (Q_g = 114–150 nC), and TO-263-3 package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V logic, and its 175 °C maximum junction temperature supports operation in under-hood automotive environments.

The integrated body diode exhibits low forward voltage (V_SD = 0.9–1.3 V at I_F = 80 A) and controlled reverse recovery (t_rr = 60–76 ns, Q_rr = 92–115 nC), reducing switching losses in synchronous rectification and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24–48 V rails.
R_DS(on) max @ V_GS = 10 V	6.3 mΩ - Enables ≤ 0.4 W conduction loss at 80 A, critical for thermally constrained high-efficiency power stages.
I_D continuous @ T_C = 25 °C	80 A - Supported by robust bondwire and die construction; limited by package thermal path, not silicon.
E_AS	530 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive load turn-off transients.
Q_g	114–150 nC - Defines gate drive power requirement; impacts switching speed and driver IC selection in hard-switched applications.
R_thJC	0.6 K/W - Enables efficient heat transfer to heatsink; allows >200 W power dissipation with modest thermal interface resistance.
t_r/t_f	21 ns / 20 ns - Fast edge rates reduce switching transition time, lowering overlap losses in PWM-controlled converters.

Pinout & Package

IPB80N06S2L06ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard TO-263 layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives logic-level voltage (≥4.5 V) to fully enhance channel; requires <150 nC total gate charge for full turn-on.
Pin 2 (Drain)	Main power output terminal	Connected to high-side or low-side switch node; electrically and thermally tied to large copper area on PCB via exposed pad.
Pin 3 (Source)	Reference and return path	Serves as signal reference for gate drive; carries full load current and must be routed with low-inductance, low-resistance trace.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, HTRB.
Logic-level gate drive	V_GS(th) range (1.2–2.0 V) ensures full enhancement with 3.3 V microcontrollers without level-shifting circuitry.
100% avalanche tested	Each unit undergoes single-pulse E_AS screening at 530 mJ, guaranteeing ruggedness against inductive switching faults.
Green package	Lead-free, RoHS-compliant PG-TO263-3-2 housing rated MSL1 up to 260 °C peak reflow, suitable for lead-free assembly.
Optimized body diode	Low Q_rr (92–115 nC) and t_rr (60–76 ns) minimize reverse recovery losses in synchronous buck and half-bridge configurations.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 100–300 kHz with precise dead-time control.

Use Value: Ultra-low R_DS(on) reduces conduction loss below 0.5 W at 80 A, enabling >96% efficiency and eliminating need for active cooling.

Use Scenario: Three-phase inverter stage for 3 kW BLDC motor in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules, driven by isolated gate drivers.

Use Value: 175 °C rated junction temperature and robust avalanche capability ensure reliability during overload and stall conditions.

Server PSU ORing Circuits

Battery Management Systems

Use Scenario: Hot-swap ORing FET in redundant 12 V server power supply units.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing reverse-current blocking and low-loss forward conduction.

Use Value: Low V_SD (0.9–1.3 V) and fast t_rr prevent shoot-through during switchover and reduce forward voltage drop vs. Schottky alternatives.

Use Scenario: Main contactor replacement in 48 V Li-ion battery disconnect units for energy storage systems.

IC Role / Device Role / Timing Role: High-current solid-state switch controlling battery pack isolation during fault or maintenance events.

Use Value: 80 A continuous rating and 530 mJ avalanche energy enable safe interruption of short-circuit currents without fuse dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-06	Same die, TO-220-3 through-hole package; R_thJA = 62 K/W (leaded), no exposed pad.	Preferred for prototyping, lower-volume industrial controls where manual soldering or heatsink clamping is used.	Select when mechanical mounting flexibility or legacy board compatibility outweighs thermal performance needs.
IPB80N06S4-05	Newer OptiMOS™ 4 generation; R_DS(on) = 4.2 mΩ @ 10 V, but V_GS(th) = 2.2–3.2 V - less logic-level compatible.	Better efficiency in fixed 10 V gate drive systems; unsuitable for 3.3 V MCU direct drive without gate boosting.	Choose only if gate drive voltage ≥ 8 V is available and sub-5 mΩ R_DS(on) justifies redesign and qualification effort.

Compared with IPP80N06S2L-06, IPB80N06S2L06ATMA2 offers superior thermal performance via TO-263 package and lower R_thJC, while IPB80N06S4-05 trades gate drive simplicity for lower conduction loss - requiring system-level trade-off between drive complexity and efficiency gain.

Availability

IPB80N06S2L06ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L06ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power conversion systems.

FAQ

Is IPB80N06S2L06ATMA2 suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage (V_GS(th) = 1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V allow full enhancement with 3.3 V logic outputs. However, gate drive strength must deliver ≥150 nC to achieve specified switching speed and low R_DS(on).

What is the maximum PCB copper area required for thermal compliance at 80 A continuous?

Per datasheet Figure 5, a 6 cm² (40 mm × 40 mm) single-layer 70 µm copper area on FR4 PCB provides R_thJA = 40 K/W. With R_thJC = 0.6 K/W and P_tot ≈ 40 W at 80 A, this achieves T_j ≈ 130 °C at T_C = 85 °C - within 175 °C limit.

Does IPB80N06S2L06ATMA2 include an integrated ESD protection diode?

No - it does not integrate dedicated ESD protection. The device meets AEC-Q101 human-body model (HBM) requirements via process-level robustness, but external TVS or RC snubbers are recommended for gate protection in noisy automotive environments.

Can IPB80N06S2L06ATMA2 replace IPP80N06S2L-06 in existing TO-220 designs?

No - direct replacement is not mechanically possible due to different packages (TO-263 vs. TO-220). PCB layout, thermal interface, and mounting hardware must be redesigned. Electrical characteristics are nearly identical, but thermal performance and gate loop inductance differ significantly.

IPB80N06S2L06ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L06ATMA2 FAQ

1.How can I place an order for IPB80N06S2L06ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L06ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L06ATMA2 reliable?

The price and inventory of IPB80N06S2L06ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L06ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L06ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L06ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L06ATMA2?

IPB80N06S2L06ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L06ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L06ATMA2?

For technical support, including IPB80N06S2L06ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L06ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S2L06ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L06ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L06ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L06ATMA2?

All IPB80N06S2L06ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L06ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L06ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S2L06ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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