Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S405ATMA2

Name: IPB80N06S405ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S405ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N06S405ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S405ATMA2.pdf

Description:: MOSFET N-CH 60V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:231

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N06S405ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 5.4 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25°C, and 175°C maximum junction temperature - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N06S405ATMA2 datasheet, IPB80N06S405ATMA2 pinout, IPB80N06S405ATMA2 application, or IPB80N06S405ATMA2 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (152 mJ), gate charge profile (Q_g = 62–81 nC), and thermal resistance (R_thJC = 1.4 K/W).

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The integrated body diode features low forward voltage (V_SD = 0.6–1.3 V at 80 A) and fast reverse recovery (t_rr = 36 ns, Q_rr = 41 nC), supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V automotive systems with 20 % safety margin against transients
R_DS(on) max	5.4 mΩ - enables <1.5 W conduction loss at 80 A, reducing heatsink requirements
I_D continuous	80 A @ T_C = 25°C - validated for high-current battery-side switching in EV auxiliary power modules
E_AS	152 mJ - ensures reliable operation under inductive load turn-off without external snubbers
Q_g	62–81 nC - determines gate driver power requirement and switching speed trade-off in 100 kHz+ converters
R_thJC	1.4 K/W - allows direct thermal coupling to heatsink for compact 100 W+ power stage designs
t_rr	36 ns - minimizes diode recovery loss during hard commutation in half-bridge configurations

Pinout & Package

IPB80N06S405ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), featuring isolated drain tab for PCB thermal relief and standard 3-pin layout optimized for automated assembly and high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection point for source loop closure; tied to PCB ground plane
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing
Pin 3 (Drain)	Main current-carrying terminal (tab-connected)	Exposed copper drain pad provides primary thermal path to PCB copper area (6 cm² recommended)

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control and ADAS power stages
100 % avalanche tested	Each unit withstands single-pulse inductive energy stress up to 152 mJ without degradation
MSL1 rating (260°C peak reflow)	Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns
Green Product (RoHS compliant)	Meets EU Directive 2011/65/EU with no restricted substances above threshold limits
175°C operating temperature	Enables placement near heat sources (e.g., IGBT modules) without derating in engine bay environments

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: Step-down conversion from 48 V battery to 12 V rail in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved buck topology.

Use Value: Low R_DS(on) reduces conduction loss by >30 % vs. legacy 8 mΩ parts, improving efficiency at 60 A load.

Use Scenario: Three-phase inverter driving 300 W BLDC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switch handling 80 A peak phase current with fast freewheeling via integrated diode.

Use Value: 36 ns t_rr and 41 nC Q_rr cut diode recovery loss by 45 % compared to standard silicon diodes.

Onboard Charger (OBC) Input Stage

12 V Automotive Fuse Replacement

Use Scenario: Active rectification and PFC front-end in bi-directional OBC for plug-in hybrids.

IC Role / Device Role / Timing Role: Boost switch operating at 100–200 kHz with 80 A pulsed current capability.

Use Value: 1.4 K/W R_thJC enables direct heatsink mounting, eliminating thermal interface material in space-constrained enclosures.

Use Scenario: Solid-state replacement of mechanical blade fuses in vehicle power distribution units.

IC Role / Device Role / Timing Role: Load switch with overcurrent protection and soft-start control via gate driver.

Use Value: 152 mJ E_AS rating supports fault clearing without catastrophic failure during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S4-05	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (no PCB cooling)	Suitable for prototyping and low-volume industrial SMPS where manual assembly is preferred	Select when board-level thermal management is impractical and discrete heatsinking is available
IPB80N06S4-05	Identical electrical specs and PG-TO263-3-2 package; differs only in tape-and-reel packaging code (ATMA2 vs. no suffix)	No functional difference; ATMA2 denotes AEC-Q101-compliant reel packaging per J-STD-020	Prefer IPB80N06S405ATMA2 for production lines requiring traceable automotive-grade reels

Compared with IPP80N06S4-05 and IPB80N06S4-05, the IPB80N06S405ATMA2 offers identical silicon performance but guarantees AEC-Q101 compliance and MSL1 reflow readiness in surface-mount format - critical for automated automotive manufacturing.

Availability

IPB80N06S405ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, onboard chargers, and solid-state fuse replacement requiring stable component supply and full AEC-Q101 traceability.

Supply support for IPB80N06S405ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This device belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability automotive power stages operating up to 175°C junction temperature.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S405ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 6 V ensuring reliable turn-on across temperature and process variation. Gate resistors must limit dv/dt-induced overshoot during fast switching.

Does IPB80N06S405ATMA2 require a gate resistor, and what value is typical?

Yes - a gate resistor is required to control switching speed and suppress oscillation. Typical values range from 2.2 Ω to 10 Ω, depending on driver capability and EMI constraints. With a 3.5 Ω gate resistor (per datasheet test condition), turn-on delay is 20 ns and rise time is 5 ns.

How does the integrated body diode perform in reverse recovery compared to discrete Schottky diodes?

The body diode has t_rr = 36 ns and Q_rr = 41 nC at 80 A, which is slower and higher-loss than Schottky diodes but avoids reverse leakage and thermal runaway issues. It is optimized for synchronous rectification in hard-switched topologies, not ultra-high-frequency applications.

Can IPB80N06S405ATMA2 be used in parallel configurations, and what layout considerations apply?

Yes - parallel operation is supported due to positive temperature coefficient of R_DS(on). Critical layout requirements include matched gate trace lengths, symmetrical source routing to minimize loop inductance, and shared thermal interface to ensure uniform junction temperature across devices.

IPB80N06S405ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S405ATMA2 FAQ

1.How can I place an order for IPB80N06S405ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S405ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S405ATMA2 reliable?

The price and inventory of IPB80N06S405ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S405ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S405ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S405ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S405ATMA2?

IPB80N06S405ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S405ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S405ATMA2?

For technical support, including IPB80N06S405ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S405ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S405ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S405ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S405ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S405ATMA2?

All IPB80N06S405ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S405ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S405ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S405ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …