Infineon Technologies IPB80N06S407ATMA2

Overview

IPB80N06S407ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 7.1 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N06S407ATMA2 datasheet, IPB80N06S407ATMA2 pinout, IPB80N06S407ATMA2 application, or IPB80N06S407ATMA2 equivalent, key selection criteria include avalanche ruggedness (71 mJ single-pulse E_AS), low gate charge (Q_g = 43–56 nC), thermal resistance (R_thJC = 1.9 K/W), and SMD-compatible TO263 footprint with 100% avalanche testing.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate silicon technology optimized for high-current switching in 12 V/24 V automotive systems. Its 6.2 mΩ typical R_DS(on) at 10 V V_GS and 80 A I_D rating enable efficient conduction in high-side and low-side configurations of BLDC motor drivers and starter-generator inverters.

The device features a fast reverse recovery diode (t_rr = 39 ns, Q_rr = 38 nC) and robust dynamic characteristics: C_iss = 3460–4500 pF, C_oss = 850–1105 pF, and t_d(on)/t_r/t_d(off)/t_f = 15/3/23/5 ns under standard test conditions (V_DD = 30 V, R_G = 3.5 Ω).

Key Specifications

Pinout & Package

IPB80N06S407ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S4-07 and IPB80N06S4-07R, the IPB80N06S407ATMA2 offers identical electrical performance in a RoHS-compliant, MSL1-reflow-ready TO263 package - making it optimal for high-volume automated SMT production of automotive power stages without sacrificing ruggedness or thermal capability.

Availability

IPB80N06S407ATMA2 is available at Aetrix Electronics and suitable for automotive starter-generator inverters, 48 V→12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year vehicle programs.

Supply support for IPB80N06S407ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V/48 V automotive subsystems including electrified powertrain and ADAS.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S407ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤12 V with a Zener diode or active clamp circuit, especially in noisy automotive environments where transient coupling may occur on gate traces.

Does IPB80N06S407ATMA2 require a gate resistor, and what value is recommended?

Yes - a series gate resistor (R_G) is required to control dV/dt and prevent oscillation. Based on measured t_d(on) = 15 ns and Q_g = 56 nC, a 3.5 Ω resistor is specified in the datasheet for standard switching tests. For 100 kHz operation in a 48 V→12 V converter, 4.7 Ω provides optimal EMI/loss trade-off while maintaining <100 ns total switching time.

How does the body diode performance compare to external Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 0.6–1.3 V at 80 A and t_rr = 39 ns, resulting in lower forward loss than 45 V Schottky diodes but higher reverse recovery loss than SiC Schottkys. It is sufficient for non-critical synchronous rectifiers in DC-DC converters below 200 kHz, but not recommended for high-frequency ZVS topologies where Q_rr-induced shoot-through is unacceptable.

Is IPB80N06S407ATMA2 suitable for linear-mode (saturation) operation?

No - this MOSFET is optimized for switching, not linear regulation. Its Safe Operating Area (SOA) curve shows limited DC capability above 10 V V_DS; at 30 V V_DS, maximum continuous current drops to ~12 A due to thermal runaway risk. Linear use requires derating to <5 W dissipation and active thermal monitoring, which contradicts its design intent and qualification scope.