Infineon Technologies IPB80P04P4L08ATMA2
- Part No.:
- IPB80P04P4L08ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB80P04P4L08ATMA2.pdf
- Description:
- MOSFET P-CH 40V 80A TO263-3
- Quantity:
- Payment:

- Shipping:

Inventory:1,986
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPB80P04P4L08ATMA2 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -40 V VDS, 7.9 mΩ RDS(on) at VGS = -10 V and ID = -80 A, qualified to AEC-Q101, with 175 °C maximum operating temperature and MSL1 reflow compatibility. It serves as a high-current load switch in automotive body control modules, enabling robust reverse-polarity protection and battery disconnect functions.
For engineers reviewing the IPB80P04P4L08ATMA2 datasheet, IPB80P04P4L08ATMA2 pinout, IPB80P04P4L08ATMA2 application, or IPB80P04P4L08ATMA2 equivalent, key selection criteria include its -80 A continuous drain rating at TC = 25 °C, 100% avalanche-tested ruggedness, SMD-optimized thermal resistance (RthJC = 2.0 K/W), and gate threshold voltage range of -1.2 V to -2.2 V for reliable low-voltage drive.
Technical Context
This OptiMOS®-P2 device uses trench-based silicon technology optimized for low RDS(on) and fast switching in DC-DC converters and motor drivers. Its gate charge profile (Qg = 71–92 nC) and low Crss (45–90 pF) support efficient PWM operation at frequencies up to 100 kHz under hard-switching conditions.
The integrated body diode exhibits trr = 46 ns and Qrr = 43 nC at IF = -50 A, enabling synchronous rectification in buck converters and freewheeling in H-bridge motor control without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient overvoltage margin |
| RDS(on) @ VGS = -10 V | 6.5–7.9 mΩ - Enables <1.3 W conduction loss at -80 A, reducing heatsink requirements |
| ID (continuous) | -80 A @ TC = 25 °C - Supports high-power load switching in junction-box and power-distribution units |
| EAS | 24 mJ - Confirmed single-pulse avalanche energy supports inductive load turn-off without snubbers |
| Qg | 71–92 nC - Determines gate driver current demand and switching transition time in PWM circuits |
| tr/tf | 11 ns / 35 ns - Enables fast edge control for EMI-sensitive applications like ADAS power supplies |
| Tj max | +175 °C - Allows operation in engine-bay environments without derating below full current |
Pinout & Package
IPB80P04P4L08ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain tab for thermal performance. Pin 1 is Gate, Pin 2 is Drain (connected to tab), Pin 3 is Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring ≤16 V negative bias; low input capacitance (Ciss = 4177–5430 pF) eases drive design |
| Pin 2 / Tab | Drain | Main power terminal tied to PCB copper pour; thermal path to heatsink via soldered tab (RthJC = 2.0 K/W) |
| Pin 3 | Source | Reference node for gate drive; connects to system ground or low-side return in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics per stress test requirements including HTOL, TC, and UHAST |
| 100% avalanche tested | Each unit subjected to single-pulse EAS = 24 mJ, ensuring reliability in inductive switching faults |
| Logic-level gate drive | VGS(th) = -1.2 to -2.2 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting |
| Green RoHS-compliant package | Halogen-free, lead-free PG-TO263-3-2 meets EU Directive 2011/65/EU and JEDEC J-STD-020D |
| MSL1 reflow rating | Withstands peak solder temperatures up to 260 °C, compatible with standard SMT assembly lines |
Applications
| Automotive Body Control Module (BCM) | 12 V Battery Disconnect Switch |
|---|---|
Use Scenario: Controlling headlight, wiper, and seat-motor loads in centralized vehicle power distribution units. IC Role / Device Role / Timing Role: High-side load switch managing up to -80 A DC loads with diagnostic feedback via current sensing. Use Value: Low RDS(on) minimizes voltage drop and heat generation during sustained operation, extending module lifetime in confined enclosures. | Use Scenario: Isolating auxiliary battery banks from main starter circuit during engine cranking or fault conditions. IC Role / Device Role / Timing Role: Reverse-polarity protected, fail-safe disconnect switch activated by MCU GPIO with fast turn-off (<50 ns fall time). Use Value: Avalanche ruggedness eliminates need for external TVS clamping, reducing BOM count and board space in safety-critical paths. |
| Industrial DC Motor Driver | Server PSU OR-ing Circuit |
Use Scenario: Half-bridge leg in 24 V brushed DC motor controllers for HVAC actuators and valve positioning. IC Role / Device Role / Timing Role: Low-side switching element with fast tf = 35 ns and low Qgd = 10–20 nC for reduced switching losses. Use Value: Optimized Crss/Ciss ratio improves Miller immunity, enabling stable operation at 50–100 kHz PWM without gate oscillation. | Use Scenario: Hot-swap redundancy in dual-input 12 V server power supplies using ideal diode configuration. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active OR-ing diode with VSD = -1.0 to -1.3 V at -80 A. Use Value: Integrated body diode with trr = 46 ns and Qrr = 43 nC prevents reverse recovery spikes, improving efficiency over discrete Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP80P04P4L-08 | TO-220-3 through-hole package; RthJA = 62 K/W (leaded); identical die and electrical specs | Suitable for prototyping or low-volume industrial controls where manual assembly or heatsink clamping is preferred | Select when mechanical mounting flexibility or legacy footprint compatibility outweighs SMT density advantages |
| IPI80P04P4L-08 | TO-262-3 (I²PAK) package; RthJC = 2.0 K/W same as IPB, but larger footprint than D²PAK | Used in higher-reliability industrial inverters where creepage/clearance margins exceed TO263 limits | Choose when enhanced isolation or vibration resistance justifies larger PCB area and lower assembly throughput |
Compared with IPP80P04P4L-08 and IPI80P04P4L-08, IPB80P04P4L08ATMA2 delivers identical electrical performance in the smallest surface-mount footprint, optimizing board area and thermal path for high-density automotive ECUs while maintaining AEC-Q101 compliance and 175 °C operation.
Availability
IPB80P04P4L08ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V battery management systems, industrial motor drives, and server OR-ing circuits requiring stable component supply across production lifecycles.
Supply support for IPB80P04P4L08ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive and industrial 12–48 V DC systems where low RDS(on), avalanche robustness, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum allowable gate-source voltage for IPB80P04P4L08ATMA2?
The absolute maximum VGS rating is -16 V. Operation beyond this value risks permanent gate oxide damage. For reliable long-term use, gate drive circuits should limit negative swing to ≤ -12 V with appropriate series resistance to suppress ringing, especially in high-di/dt environments like motor drives.
Does IPB80P04P4L08ATMA2 require a gate resistor, and if so, what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 12 V automotive PWM at 20–100 kHz, a 4.7 Ω to 10 Ω resistor between driver output and Gate (Pin 1) balances switching speed and EMI. Lower values increase switching loss; higher values risk shoot-through in bridge configurations.
Can IPB80P04P4L08ATMA2 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) enables current sharing. Parallel operation requires matched layout (symmetrical trace lengths, shared thermal plane), individual gate resistors (≤5 Ω), and gate drive with ≤1 ns skew. Derate total current by 15% versus sum of individual ratings to ensure thermal stability.
Is the drain tab electrically isolated from the PCB copper pour in the PG-TO263-3-2 package?
No - the drain (Pin 2) is internally connected to the exposed metal tab, which must be soldered directly to a PCB copper pour serving as both electrical connection and primary thermal path. Electrical isolation requires insulating thermal pads or ceramic substrates, which increase RthJC by ≥1.5 K/W and are not recommended for this part's rated current.
IPB80P04P4L08ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ P2
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5430 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB80P04P4L08ATMA2 FAQ
1.How can I place an order for IPB80P04P4L08ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB80P04P4L08ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB80P04P4L08ATMA2 reliable?
The price and inventory of IPB80P04P4L08ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P04P4L08ATMA2 is usually 5 days.
3.What payment methods are accepted for IPB80P04P4L08ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P04P4L08ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB80P04P4L08ATMA2?
IPB80P04P4L08ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB80P04P4L08ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB80P04P4L08ATMA2?
For technical support, including IPB80P04P4L08ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P04P4L08ATMA2 requirements.
6.How does Aetrix verify that IPB80P04P4L08ATMA2 is sourced from the original manufacturer or authorized distributors?
All IPB80P04P4L08ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P04P4L08ATMA2 meets industry standards.
7.What is the process for return or replacement of IPB80P04P4L08ATMA2?
All IPB80P04P4L08ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P04P4L08ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB80P04P4L08ATMA2 part is unused and in its original packaging.
Return procedure for IPB80P04P4L08ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPB80P04P4L08ATMA2 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

