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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB90N04S402ATMA1

Name: IPB90N04S402ATMA1
Brand: Infineon Technologies
SKU: IPB90N04S402ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB90N04S402ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB90N04S402ATMA1.pdf

Description:: MOSFET N-CH 40V 90A D2PAK

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Inventory:995

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Product details

Overview

IPB90N04S402ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 40 V V_DS, 90 A continuous drain current at T_C = 25 °C, and 2.1 mΩ max R_DS(on) (SMD version). It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB90N04S402ATMA1 datasheet, IPB90N04S402ATMA1 pinout, IPB90N04S402ATMA1 application, or IPB90N04S402ATMA1 equivalent, key selection criteria include its 175 °C maximum junction temperature, 100% single-pulse avalanche tested ruggedness, 1.0 K/W junction-to-case thermal resistance, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-duty-cycle, high-current applications. Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity while enabling direct drive from standard 3.3 V/5 V logic controllers.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 90 A and 53 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its 1.0 K/W R_thJC and compatibility with 6 cm² PCB copper area for enhanced heat dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive systems and 36 V industrial rails
R_DS(on) max (SMD)	2.1 mΩ - Enables <1 W conduction loss at 90 A, reducing heatsink requirements
I_D continuous	90 A at T_C = 25 °C - Supports high-current motor phases and battery main switches
E_AS	475 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching reliability
Q_g total	91–118 nC - Defines gate drive power requirement for 100 kHz+ PWM operation
T_j max	+175 °C - Enables operation in engine bay environments without derating
R_thJC	1.0 K/W - Allows precise junction temperature estimation using case temperature measurement

Pinout & Package

IPB90N04S402ATMA1 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; threshold range 2.0–4.0 V ensures noise margin
Pin 2 (Drain)	High-side current path	Exposed copper tab - must be soldered to large PCB copper pour for thermal conduction and low-inductance current return
Pin 3 (Source)	Reference node	Common return for gate drive and load current; defines local ground reference for driver IC placement

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS = 475 mJ test - eliminates field failure from inductive kick
MSL1 reflow rating	Withstands peak reflow up to 260 °C - compatible with standard lead-free assembly processes
Green product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU
OptiMOS™-T2 technology	Optimized trench structure reduces Q_g/R_DS(on) ratio by ~20% vs. prior generation

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–200 kHz.

Use Value: 2.1 mΩ R_DS(on) minimizes conduction loss at 90 A peak, enabling >96% efficiency at full load.

Use Scenario: Three-phase inverter driving 12 V BLDC assist motor in steering column.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter with 10 kHz PWM and fast dead-time control.

Use Value: 53 ns t_rr and soft-recovery body diode reduce shoot-through risk and EMI during commutation.

Battery Disconnect Units (BDU)

Industrial Motor Starters

Use Scenario: Solid-state main contactor replacing electromechanical relay in 48 V battery systems.

IC Role / Device Role / Timing Role: Single-pole, normally-open high-current switch controlled via isolated gate driver.

Use Value: 475 mJ E_AS rating withstands fault currents during hot-plug events without destruction.

Use Scenario: Soft-start and overload protection circuit for 3 kW AC induction motor drives.

IC Role / Device Role / Timing Role: Current-limiting switch in series with motor winding during ramp-up phase.

Use Value: 175 °C T_j max allows sustained 90 A operation in enclosed enclosures without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (higher), Q_g = 131 nC (higher), no AEC-Q101 qualification	Not suitable for automotive under-hood use; limited to industrial/commercial ambient	Select only if cost sensitivity outweighs thermal performance and qualification requirements
STL220N4F7AG	R_DS(on) = 1.8 mΩ (lower), Q_g = 105 nC, AEC-Q101 qualified, same D²PAK package	Higher gate charge increases driver loss; tighter R_DS(on) tolerance improves parallel operation	Prefer for new designs requiring lowest on-resistance; verify gate driver capability for higher Q_g

Compared with IRF1404ZPBF and STL220N4F7AG, IPB90N04S402ATMA1 offers balanced trade-offs: lower R_DS(on) than IRF1404ZPBF with full automotive qualification, and lower Q_g than STL220N4F7AG for reduced gate drive loss in high-frequency operation.

Availability

IPB90N04S402ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and industrial motor control applications requiring stable component supply across multi-year production cycles.

Supply support for IPB90N04S402ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications where reliability and thermal robustness are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB90N04S402ATMA1?

The absolute maximum V_GS is ±20 V. Operation above +10 V or below −10 V provides no benefit and risks gate oxide damage. Recommended drive is 10 V for full enhancement with margin; 5.8 V plateau voltage confirms stable turn-on behavior under load.

Does IPB90N04S402ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz switching with 90 A load, a 3.5 Ω resistor is validated in the datasheet. Lower values increase switching speed but raise EMI; higher values reduce ringing at the cost of increased switching loss.

Can IPB90N04S402ATMA1 be paralleled with identical units for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal interface are essential. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has 0.9–1.3 V V_SD at 90 A and 53 ns t_rr, making it viable for low-frequency (<100 kHz) synchronous rectification. For higher frequencies, external Schottky diodes may improve efficiency due to lower forward drop and faster recovery.

IPB90N04S402ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB90N04S402ATMA1 FAQ

1.How can I place an order for IPB90N04S402ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB90N04S402ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB90N04S402ATMA1 reliable?

The price and inventory of IPB90N04S402ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB90N04S402ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB90N04S402ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB90N04S402ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB90N04S402ATMA1?

IPB90N04S402ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB90N04S402ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB90N04S402ATMA1?

For technical support, including IPB90N04S402ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB90N04S402ATMA1 requirements.

6.How does Aetrix verify that IPB90N04S402ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB90N04S402ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB90N04S402ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB90N04S402ATMA1?

All IPB90N04S402ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB90N04S402ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB90N04S402ATMA1 part is unused and in its original packaging.

Return procedure for IPB90N04S402ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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