Infineon Technologies IPB90R340C3ATMA2

Overview

IPB90R340C3ATMA2 from Infineon Technologies is a 900 V, 0.34 Ω (max) CoolMOS™ C3 superjunction power MOSFET in PG-TO263 package, optimized for high-efficiency quasi-resonant flyback and forward SMPS topologies in PC silverbox, lighting, and solar inverters. It delivers 9.2 A continuous drain current at T_C = 100 °C, 94 nC total gate charge, and extreme dv/dt ruggedness up to 50 V/ns.

For engineers reviewing the IPB90R340C3ATMA2 datasheet, IPB90R340C3ATMA2 pinout, IPB90R340C3ATMA2 application, or IPB90R340C3ATMA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (678 mJ), diode reverse recovery performance (Q_rr = 11 µC), and thermal resistance (R_thJC = 0.6 K/W).

Technical Context

This CoolMOS™ C3 device employs charge compensation technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (0.34 Ω × 94 nC), enabling reduced conduction and switching losses in high-voltage AC/DC converters. Its 900 V V_(BR)DSS and 50 V/ns dv/dt rating support robust operation in hard-switched and resonant topologies with high bus voltages.

The integrated body diode features low V_SD (0.8–1.2 V) and controlled t_rr (510 ns), minimizing commutation losses and EMI in synchronous rectification and bridge configurations. Thermal design is supported by low junction-to-case resistance (0.6 K/W) and JEDEC-qualified industrial reliability.

Key Specifications

Pinout & Package

IPB90R340C3ATMA2 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard TO263 layout: Drain (tab), Source (pin 1), Gate (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW90NK90Z and IXTH90N10L2, IPB90R340C3ATMA2 offers superior R_DS(on) × Q_g balance, surface-mount compatibility, and certified industrial lifetime-making it optimal for high-density, high-reliability AC/DC and solar power stages.

Availability

IPB90R340C3ATMA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, solar microinverters, industrial LED drivers, and server PSU front-end PFC circuits requiring stable component supply across multi-year production cycles.

Supply support for IPB90R340C3ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability AC/DC conversion in industrial, solar, and computing power supplies-designed specifically to replace older planar MOSFETs with lower loss, faster switching, and enhanced ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPB90R340C3ATMA2 supports 9.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area (≥6 cm²) for the drain tab and natural convection cooling. Derating applies above this temperature per the P_tot vs. T_C curve on page 4 of the datasheet.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 2.5–3.5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V to 10 V is sufficient for robust switching; negative bias is unnecessary and not recommended, as V_GS must remain within ±20 V limits to avoid gate oxide damage.

Can IPB90R340C3ATMA2 be used in synchronous rectification configurations?

While the integrated body diode is optimized for soft recovery (Q_rr = 11 µC, t_rr = 510 ns), the device is not designed as a synchronous rectifier. Its R_DS(on) is higher than dedicated SR MOSFETs, and its gate drive timing lacks the low-V_GS turn-on characteristics needed for precise low-side control. Use only as a primary-side switch or freewheeling device in non-synchronous topologies.

Is bottom-side wave soldering permitted for this part?

Yes. Per the datasheet (Rev. 2.0, page 2), bottom-side PCB wave soldering is explicitly allowed, though direct wave soldering of the component body is not qualified. Reflow soldering is preferred (MSL1, peak 260 °C), and the device must be mounted with the drain tab soldered to a thermally robust copper area to maintain R_thJC = 0.6 K/W performance.