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Infineon Technologies IPBE65R050CFD7AATMA1

Name: IPBE65R050CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R050CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPBE65R050CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IPBE65R050CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 45A TO263-7

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Product details

Overview

IPBE65R050CFD7AATMA1 from Infineon is a 650 V, 50 mΩ automotive-qualified Superjunction MOSFET in D²-PAK (PG-TO263-7-11) package with Kelvin source contact, integrated fast body diode (diF/dt = 1300 A/µs), and 100% avalanche tested - designed for high-efficiency PFC and ZVS phase-shift full-bridge DC-DC stages in on-board battery chargers.

For engineers reviewing the IPBE65R050CFD7AATMA1 datasheet, IPBE65R050CFD7AATMA1 pinout, IPBE65R050CFD7AATMA1 application, or IPBE65R050CFD7AATMA1 equivalent, key selection criteria include R_DS(on) max of 50 mΩ at 10 V, Q_g typ of 102 nC, E_oss of 13.0 µJ at 400 V, 211 A pulsed drain current, and AEC-Q101 qualification for automotive power conversion systems.

Technical Context

This CoolMOS™ CFD7A device implements a silicon-based superjunction structure optimized for resonant topologies, featuring ultra-low Q_rr (1.2 µC) and best-in-class FOM (R_DS(on) × Q_g and R_DS(on) × E_oss). Its Kelvin source configuration enables precise gate control and reduced common-source inductance during high-di/dt switching.

The integrated fast body diode supports hard-commutated and zero-voltage-switched operation up to 1300 A/µs diF/dt, while its 650 V blocking voltage and 150 °C maximum junction temperature ensure robustness in 475 V battery systems. Thermal resistance R_thJC is 0.55 °C/W, enabling high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 475 V battery systems with margin for voltage transients and ringing.
R_DS(on), max	50 mΩ @ T_j = 150 °C - Defines conduction loss at full load and thermal steady state.
Q_g, typ	102 nC - Determines gate drive power requirement and influences switching speed control.
E_oss @ 400 V	13.0 µJ - Directly impacts turn-off energy loss and ZVS capability in resonant converters.
I_D,pulse	211 A - Supports peak current demands in LLC and phase-shift full-bridge transient conditions.
diF/dt (body diode)	1300 A/µs - Enables reliable commutation in high-frequency synchronous rectification and PFC.
T_j,max	150 °C - Specifies maximum allowable junction temperature for lifetime and reliability validation.

Pinout & Package

Package: PG-TO263-7-11 (D²-PAK), surface-mount, with isolated tab (Drain), Kelvin Source (Pin 2), and main Source (Pins 3–7). Creepage distance enhanced for automotive isolation requirements.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-voltage power terminal	Primary heat-sinking path and high-side switching node; electrically connected to Drain.
Pin 1	Gate	Control input for MOSFET channel; requires low-inductance gate loop to minimize oscillation.
Pin 2	Kelvin Source (Sense Source)	Provides dedicated low-noise return path for gate driver feedback; not interchangeable with main Source.
Pins 3–7	Main Source	Carries full load current; paralleled for low resistance and thermal spreading.

Key Features

Feature	Design Value
Integrated fast body diode	diF/dt = 1300 A/µs and t_rr = 177 ns - Enables reliable hard-switching and ZVS in PFC and LLC without external diode.
Kelvin Source contact	Dedicated Pin 2 sense path - Reduces gate loop inductance and improves controllability under high di/dt.
AEC-Q101 qualification	Automotive-grade reliability validated per stress test standards - Required for OBC and traction inverter auxiliary stages.
Ultra-low R_DS(on) × Q_g FOM	5.1 Ω·nC (50 mΩ × 102 nC) - Balances conduction and switching losses for >100 kHz operation.
100% unclamped avalanche rated	E_AS = 248 mJ - Provides ruggedness against inductive switching faults without external snubbers.

Applications

On-Board Charger (OBC) PFC Stage

ZVS Phase-Shift Full-Bridge DC-DC

Use Scenario: Boost-type active PFC front-end converting AC grid to 400–450 V DC bus in EV on-board chargers.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: Low Q_rr (1.2 µC) and fast body diode reduce reverse recovery losses by >40% vs. prior-gen CoolMOS™, improving light-load efficiency.

Use Scenario: Primary-side switch in isolated bidirectional DC-DC converter linking HV battery and 48 V/12 V subsystems.

IC Role / Device Role / Timing Role: Resonant switching device operating in zero-voltage switching (ZVS) region above 100 kHz.

Use Value: E_oss = 13.0 µJ enables reliable ZVS down to 20% load, extending soft-switching range and reducing EMI.

Bidirectional DC-DC Converter

Industrial EVSE Power Stage

Use Scenario: Dual-active-bridge (DAB) topology supporting regenerative energy flow between battery packs of different voltages.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in both forward and reverse power transfer modes.

Use Value: Symmetrical diF/dt (1300 A/µs) and low R_DS(on) ensure balanced conduction loss and thermal distribution across all quadrants.

Use Scenario: High-power AC/DC stage in commercial EV charging stations (11–22 kW) requiring long-term reliability and thermal stability.

IC Role / Device Role / Timing Role: Main switching device in interleaved PFC or LLC resonant converter operating continuously at 85 °C ambient.

Use Value: R_thJC = 0.55 °C/W and 150 °C T_j,max support >10-year field life with derated thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on),max = 41 mΩ, same CFD7A die, TO-247-3 package	Higher power dissipation capability (P_tot = 395 W), no Kelvin source	Preferred for air-cooled industrial PFC where layout inductance is lower and thermal mass is greater.
IPP65R050CFD7AKSA1	R_DS(on),max = 50 mΩ, same CFD7A die, TO-220FP-3 package, no Kelvin source	Limited to 125 W P_tot, no sense pin, lower creepage distance	Suitable for cost-sensitive, non-automotive 1–3 kW SMPS where AEC-Q101 and Kelvin source are not required.

Compared with IPW65R041CFD7XKSA1 and IPP65R050CFD7AKSA1, IPBE65R050CFD7AATMA1 uniquely combines Kelvin source, D²-PAK surface-mount form factor, AEC-Q101 qualification, and optimized FOM for space-constrained, high-reliability automotive DC-DC stages.

Availability

IPBE65R050CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board battery chargers, ZVS phase-shift full-bridge converters, and bidirectional DC-DC systems requiring stable component supply, automotive qualification, and high thermal reliability.

Supply support for IPBE65R050CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This part belongs to the CoolMOS™ CFD7A product line, engineered specifically for high-efficiency, high-reliability resonant and hard-switched power conversion in electric vehicle on-board chargers and traction inverters.

FAQ

Can IPBE65R050CFD7AATMA1 be used in linear mode operation?

No - Infineon explicitly advises against linear mode operation for this device. The datasheet states it is not recommended due to unvalidated safe operating area and potential thermal runaway. Linear-mode applications require separate evaluation and direct technical support from Infineon sales.

What is the functional difference between Pin 2 (Kelvin Source) and Pins 3–7 (Main Source)?

Pin 2 is the Kelvin (sense) source, providing a dedicated low-inductance return path for gate driver feedback to improve switching accuracy. Pins 3–7 are the main source terminals carrying full load current. They are not interchangeable - swapping them causes gate control instability and possible device failure.

Is the body diode fully rated for commutation at 1300 A/µs?

Yes - the datasheet specifies diF/dt = 1300 A/µs under defined test conditions (V_DS = 0–400 V, I_SD ≤ 24.8 A, T_j = 25 °C). This rating is validated for hard commutation in PFC and resonant converters, and is supported by t_rr = 177 ns and Q_rr = 1.2 µC.

Does IPBE65R050CFD7AATMA1 require special PCB layout considerations?

Yes - the Kelvin source connection must be routed with minimal loop area and separated from high-current source paths. Gate drive traces must be short and shielded from drain noise. Layout guidelines are detailed in Infineon Application Note AN2019-05 and must be followed to achieve specified EMI and switching performance.

IPBE65R050CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3-10

IPBE65R050CFD7AATMA1 FAQ

1.How can I place an order for IPBE65R050CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPBE65R050CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPBE65R050CFD7AATMA1 reliable?

The price and inventory of IPBE65R050CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPBE65R050CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPBE65R050CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPBE65R050CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPBE65R050CFD7AATMA1?

IPBE65R050CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPBE65R050CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPBE65R050CFD7AATMA1?

For technical support, including IPBE65R050CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPBE65R050CFD7AATMA1 requirements.

6.How does Aetrix verify that IPBE65R050CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPBE65R050CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPBE65R050CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPBE65R050CFD7AATMA1?

All IPBE65R050CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPBE65R050CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPBE65R050CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPBE65R050CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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