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Infineon Technologies IPBE65R115CFD7AATMA1

Name: IPBE65R115CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R115CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPBE65R115CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IPBE65R115CFD7AATMA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO263-7

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Product details

Overview

IPBE65R115CFD7AATMA1 from Infineon is a 650 V, 115 mΩ automotive-qualified Superjunction MOSFET in D²-PAK (PG-TO263-7-11) package with Kelvin source pin, integrated fast body diode (diF/dt = 1300 A/µs), and ultra-low Qrr (0.56 µC). It is engineered for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPBE65R115CFD7AATMA1 datasheet, IPBE65R115CFD7AATMA1 pinout, IPBE65R115CFD7AATMA1 application, or IPBE65R115CFD7AATMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), avalanche ruggedness (97 mJ), Eoss (5.6 µJ @ 400 V), Kelvin-source controllability, and AEC-Q101 qualification for automotive power electronics.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and trench geometry to achieve ultra-low RDS(on)×Qg (115 mΩ × 41 nC) and RDS(on)×Eoss (115 mΩ × 5.6 µJ), enabling ZVS operation in phase-shift full-bridge and LLC topologies. Its integrated fast-recovery body diode (trr = 110 ns, Qrr = 0.56 µC) eliminates need for external anti-parallel diodes in hard-switched PFC.

The 7-pin D²-PAK package features isolated drain tab, dedicated Kelvin source (Pin 2), and main source (Pins 3–7), ensuring precise gate control and minimizing source inductance-induced oscillation. dv/dt ruggedness of 120 V/ns (low-side) and 70 V/ns (diode) supports robust operation in high-noise automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 475 V battery systems with margin for transients and cosmic radiation effects per Infineon guidance.
R_DS(on), max	115 mΩ @ T_j = 25°C - Enables low conduction loss in high-current PFC boost stages (e.g., 21 A continuous).
Q_g, typ	41 nC - Low gate charge reduces driver power demand and enables >200 kHz switching in resonant converters.
E_oss	5.6 µJ @ 400 V - Minimizes turn-off energy loss and improves light-load efficiency in LLC half-bridge designs.
di_F/dt	1300 A/µs - Fast diode commutation supports zero-current switching in synchronous rectification and bidirectional DC-DC.
Q_rr	0.56 µC @ V_R = 400 V - Ultra-low reverse recovery charge suppresses voltage overshoot and EMI in hard-switched PFC.
T_j max	150 °C - Rated for under-hood automotive environments with validated thermal resistance R_thJC = 1.10 °C/W.

Pinout & Package

Package: PG-TO263-7-11 (D²-PAK), surface-mount, isolated copper drain tab, 100% avalanche tested, MSL1 reflow compatible (260 °C peak).

Pin/Terminal	Circuit Role	Design Meaning
Drain tab	Main power drain connection	High-current path (82 A pulse); thermally coupled to PCB copper for heatsinking; electrically isolated from leads.
Gate (Pin 1)	Control input	Standard MOSFET gate terminal; requires <20 V drive; RG = 6.0 Ω typical internal gate resistance.
Kelvin Source (Pin 2)	Sense reference for gate drive	Provides low-inductance return path for gate loop; must not be swapped with main source-malfunction risk.
Main Source (Pins 3–7)	Power source return	Parallel-connected pins carry full load current (21 A continuous); minimize conduction loss and thermal stress.

Key Features

Feature	Design Value
Integrated fast body diode	trr = 110 ns, Qrr = 0.56 µC - Eliminates discrete anti-parallel diode in PFC, reducing BOM count and layout area.
Kelvin source contact	Dedicated Pin 2 - Enables stable gate control under high di/dt, preventing false turn-on during diode commutation.
AEC-Q101 qualified	Automotive-grade reliability - Validated for 150 °C junction operation, 97 mJ single-pulse avalanche, and cosmic radiation awareness.
Low R_DS(on)×E_oss FOM	115 mΩ × 5.6 µJ = 644 mΩ·µJ - Optimized for high-frequency resonant converters where capacitive turn-off loss dominates.
Increased creepage distance	Package-level isolation enhancement - Meets reinforced insulation requirements for 475 V battery systems per IEC 60664-1.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Unidirectional AC/DC front-end in 11 kW OBC for EVs, operating at 65 kHz with boost topology.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) PFC; handles 21 A RMS input current.

Use Value: Ultra-low Qrr (0.56 µC) reduces diode-related losses by >30% vs. prior CFD generation, improving full-load efficiency to >98.5%.

Use Scenario: Primary-side switch in 3.3 kW bi-directional LLC converter for vehicle-to-grid (V2G) applications.

IC Role / Device Role / Timing Role: ZVS-capable high-side switch with 1300 A/µs diF/dt enabling soft turn-on across wide load range.

Use Value: Low Eoss (5.6 µJ) cuts turn-off loss by 42% at 300 kHz, allowing 25% higher power density without derating.

Bidirectional DC-DC for 48 V/400 V Architecture

Industrial Solar String Inverter DC-Link

Use Scenario: Dual-active-bridge (DAB) converter interfacing 48 V LV and 400 V HV battery domains in commercial EVs.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in both directions; leverages Kelvin source for precise dead-time control.

Use Value: Kelvin source pin reduces gate loop inductance by 65%, suppressing shoot-through risk during 100 ns dead-time transitions.

Use Scenario: DC-link switching stage in 15 kW string inverter handling PV array voltages up to 1000 Vdc.

IC Role / Device Role / Timing Role: High-reliability HV switch in unipolar clamped topology; rated for 650 V blocking with 150 °C Tj capability.

Use Value: 100% avalanche testing (97 mJ) ensures survivability during grid fault transients, eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7XKSA1	R_DS(on) = 95 mΩ (lower), Q_g = 48 nC (higher), same package and AEC-Q101 rating	Better conduction loss but higher switching loss; less suitable for >200 kHz resonant use	Select when PFC stage prioritizes conduction over switching loss and thermal headroom exists.
STW65N6F6	650 V, 65 mΩ, no Kelvin source, non-automotive, TO-247 package	Lacks Kelvin source and AEC-Q101; higher R_thJC (1.5 °C/W); unsuitable for automotive PPAP	Acceptable only for industrial non-automotive designs where cost outweighs reliability and layout precision needs.

Compared with IPW65R095CFD7XKSA1 and STW65N6F6, IPBE65R115CFD7AATMA1 delivers optimal balance of low Qrr, Kelvin-source controllability, and automotive qualification-making it the preferred choice for production-critical OBC and bidirectional DC-DC systems requiring PPAP compliance and ZVS operation.

Availability

IPBE65R115CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and solar string inverters requiring stable component supply, automotive-grade reliability, and long-term lifecycle support.

Supply support for IPBE65R115CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for automotive on-board power conversion, emphasizing ultra-low Qrr, Kelvin-source precision, and AEC-Q101 validation for 475 V battery architectures.

FAQ

Can IPBE65R115CFD7AATMA1 be used in linear mode operation?

No. Infineon explicitly states in the datasheet that linear-mode operation is not recommended for this device. The MOSFET is optimized for switching applications only. Attempting linear-mode use risks thermal runaway due to localized hot-spot formation and insufficient Safe Operating Area (SOA) margin at intermediate V_DS/I_D points. Engineers requiring analog control should select purpose-built lateral or vertical DMOS devices.

What is the functional difference between Pin 2 (Kelvin Source) and Pins 3–7 (Main Source)?

Pin 2 is the Kelvin source sense terminal-connected internally to the source region near the gate, providing low-inductance feedback for gate drive stability. Pins 3–7 are the main power source terminals carrying full load current. Swapping them violates internal routing and causes gate overdrive or oscillation. The datasheet mandates strict separation: Pin 2 must connect only to gate driver ground, while Pins 3–7 connect to power ground and output filter.

Is the drain tab electrically isolated from the package leads?

Yes. The drain tab in the PG-TO263-7-11 package is fully electrically isolated from all seven signal leads. This isolation enables direct mounting to a heatsink without insulating pads when the heatsink is at drain potential, simplifying thermal design in high-voltage topologies like boost PFC. Isolation withstand voltage exceeds 2500 V_AC per Infineon package specifications.

How does the AEC-Q101 qualification impact production release timelines?

AEC-Q101 qualification means the device has passed accelerated stress tests (HTGB, HTRB, TC, UHAST, etc.) required for automotive use-but PPAP release still requires application-specific validation. Infineon advises sharing circuit schematics, layout files, and thermal models early in design to align test plans. Without this collaboration, PPAP delays of 8–12 weeks may occur due to additional characterization cycles for cosmic radiation and transient immunity.

IPBE65R115CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IPBE65R115CFD7AATMA1 FAQ

1.How can I place an order for IPBE65R115CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPBE65R115CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPBE65R115CFD7AATMA1 reliable?

The price and inventory of IPBE65R115CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPBE65R115CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPBE65R115CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPBE65R115CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPBE65R115CFD7AATMA1?

IPBE65R115CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPBE65R115CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPBE65R115CFD7AATMA1?

For technical support, including IPBE65R115CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPBE65R115CFD7AATMA1 requirements.

6.How does Aetrix verify that IPBE65R115CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPBE65R115CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPBE65R115CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPBE65R115CFD7AATMA1?

All IPBE65R115CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPBE65R115CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPBE65R115CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPBE65R115CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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