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Infineon Technologies IPBE65R190CFD7AATMA1

Name: IPBE65R190CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R190CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPBE65R190CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IPBE65R190CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 14A TO263-7

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Product details

Overview

IPBE65R190CFD7AATMA1 from Infineon is a 650 V, 190 mΩ automotive-qualified Superjunction MOSFET in D²-PAK (PG-TO263-7-11) package with Kelvin source, integrated fast body diode, and AEC-Q101 qualification. It delivers ultra-low Qrr (0.46 µC), low RDS(on)×Qg FOM, and 1300 A/µs diF/dt for high-efficiency PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPBE65R190CFD7AATMA1 datasheet, IPBE65R190CFD7AATMA1 pinout, IPBE65R190CFD7AATMA1 application, or IPBE65R190CFD7AATMA1 equivalent, key selection criteria include avalanche ruggedness (64 mJ), dv/dt immunity (120 V/ns), Kelvin-source controllability, and 475 V battery system compatibility.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and trench geometry to achieve simultaneous reduction of conduction and switching losses. Its integrated fast-recovery body diode (trr = 97 ns, Qrr = 0.46 µC) enables zero-voltage switching in LLC and phase-shift full-bridge topologies without external diode snubbing.

The Kelvin source configuration separates power and sense source terminals (Pin 2 = sense source, Pins 3–7 = power source), enabling precise gate drive control and minimizing common-source inductance effects. This architecture supports stable operation at high diF/dt (1300 A/µs) and improves EMI performance in high-frequency (>100 kHz) resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 475 V battery systems with margin for transient overvoltage in automotive traction and OBC applications.
R_DS(on),max	190 mΩ @ T_j = 150°C - Enables low conduction loss in high-current PFC boost stages up to 14 A continuous.
Q_g,typ	28 nC @ V_GS = 0–10 V - Low gate charge allows efficient 100+ kHz switching with standard gate drivers and reduced driver power loss.
E_oss @ 400 V	3.7 µJ - Minimizes turn-off energy loss in hard-switched and ZVS topologies, improving light-load efficiency.
di_F/dt	1300 A/µs - Sustains rapid reverse recovery in bidirectional DC-DC without oscillation or voltage overshoot.
dv/dt ruggedness	120 V/ns - Ensures reliable operation under high dV/dt stress in half-bridge configurations without false turn-on.
Avalanche energy E_AS	64 mJ - Withstands single-pulse inductive energy during fault conditions without failure, supporting robust protection design.

Pinout & Package

Package: PG-TO263-7-11 (D²-PAK), surface-mount, drain-connected tab for thermal and electrical connection. Includes isolated Kelvin source terminal for accurate gate control.

Pin/Terminal	Circuit Role	Design Meaning
Drain tab	Main current path drain terminal	Electrically and thermally connected to PCB copper pour; primary heat dissipation path.
Gate (Pin 1)	Control electrode	Standard MOSFET gate input; requires <20 V absolute max rating per datasheet.
Power Source (Pins 3–7)	High-current source return	Parallel-connected pins carrying full load current; must be routed with low-inductance layout.
Sense Source (Pin 2)	Kelvin source reference	Connects directly to gate driver ground; isolates gate loop from power loop to suppress ringing.

Key Features

Feature	Design Value
Integrated fast body diode	trr = 97 ns, Qrr = 0.46 µC - Eliminates need for external anti-parallel diode in bridge legs and simplifies layout in resonant converters.
Kelvin source contact	Dedicated Pin 2 sense source - Enables stable gate drive under high di/dt, reducing switching instability and EMI.
AEC-Q101 qualification	Automotive-grade reliability testing - Validated for under-hood temperature cycling (-40°C to +150°C) and mechanical shock per AEC standards.
Ultra-low R_DS(on) × Q_g FOM	5.32 Ω·nC - Balances conduction and switching losses for optimal efficiency across 65–100 kHz PFC and DC-DC operating ranges.
100% avalanche tested	Single-pulse E_AS = 64 mJ - Guarantees ruggedness against inductive switching faults without derating.

Applications

On-Board Charger (OBC) PFC Stage

Bi-Directional DC-DC Converter

Use Scenario: Boost PFC front-end in 400–475 V battery EV charging systems operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost converter; handles 14 A continuous drain current.

Use Value: Ultra-low Qrr and Kelvin source reduce body diode losses and gate drive uncertainty, enabling >98.5% PFC efficiency at full load.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) topology transferring power between 400 V battery and 48 V auxiliary system.

IC Role / Device Role / Timing Role: High-side ZVS switch with controlled diF/dt (1300 A/µs); operates in soft-switching region with minimal turn-on loss.

Use Value: Integrated fast diode and low E_oss (3.7 µJ) enable reliable zero-voltage turn-on across wide load and voltage ranges.

LLC Resonant Converter

Phase-Shift Full-Bridge (PSFB)

Use Scenario: Half-bridge primary switch in high-efficiency LLC resonant DC-DC for vehicle infotainment and ADAS power supplies.

IC Role / Device Role / Timing Role: Resonant-mode switching device with dv/dt immunity (120 V/ns); sustains high-frequency operation up to 300 kHz.

Use Value: Low C_oss (20 pF) and Co(er) (46 pF) minimize dead-time losses and improve resonant tank control precision.

Use Scenario: High-side switch in PSFB used for high-power traction inverter auxiliary supply or fast-charging infrastructure.

IC Role / Device Role / Timing Role: Hard- and soft-switched switch with avalanche-rated ruggedness; handles 55 A pulsed drain current during transient overload.

Use Value: 100% avalanche-tested design (64 mJ) ensures fault tolerance during short-circuit events without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7XKSA1	Lower R_DS(on) (95 mΩ), higher Q_g (45 nC), same package and AEC-Q101 grade	Better conduction loss but higher switching loss; suited for lower-frequency (<65 kHz) PFC where thermal margin is critical	Select when peak efficiency at light-to-mid load dominates over gate drive complexity and EMI concerns.
STW65N6F6	650 V, 65 mΩ, no Kelvin source, non-automotive grade, TO-247 package	Lacks AEC-Q101 qualification and fast body diode; requires external diode and careful gate layout for high diF/dt	Consider only for industrial/non-automotive designs where cost and package footprint are prioritized over automotive reliability and integrated diode performance.

Compared with IPW65R095CFD7XKSA1 and STW65N6F6, IPBE65R190CFD7AATMA1 offers the optimal balance of R_DS(on) × Q_g FOM, Kelvin-source stability, and automotive qualification-making it uniquely suitable for space-constrained, high-reliability OBC and bi-directional DC-DC modules requiring consistent ZVS behavior and PPAP compliance.

Availability

IPBE65R190CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bi-directional DC-DC converters, and LLC resonant power supplies requiring stable component supply, AEC-Q101 compliance, and high-temperature operational continuity.

Supply support for IPBE65R190CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive power conversion in electric vehicle on-board chargers and traction auxiliary systems.

FAQ

What is the purpose of the Kelvin source (Pin 2) on IPBE65R190CFD7AATMA1?

Pin 2 is the dedicated sense source terminal, electrically isolated from the main power source pins (3–7). It provides a low-inductance return path for the gate driver, eliminating common-source inductance effects that cause gate voltage undershoot and switching instability-critical for maintaining ZVS in high-di/dt resonant topologies.

Can IPBE65R190CFD7AATMA1 replace older CoolMOS™ CFD2 or CFD6 devices in existing designs?

Yes, but with layout and drive adjustments: the Kelvin source requires separate gate driver grounding, and its lower Qrr (0.46 µC vs. ~1.2 µC for CFD6) reduces body diode loss but may shift ZVS boundary. Gate resistor tuning and dead-time optimization are recommended to fully exploit improved diF/dt (1300 A/µs) and dv/dt (120 V/ns) performance.

Is the internal body diode suitable for continuous bidirectional conduction in a dual-active-bridge converter?

Yes-the integrated diode is rated for 14 A continuous forward current (T_C = 25°C) and 55 A pulsed current, with trr = 97 ns and Qrr = 0.46 µC. Its fast recovery and high diF/dt capability make it suitable for synchronous rectification in both directions, provided junction temperature remains ≤150°C and layout minimizes parasitic inductance.

Does IPBE65R190CFD7AATMA1 require special PCB layout considerations compared to standard D²-PAK MOSFETs?

Yes: the Kelvin source (Pin 2) must be routed separately from power source traces and connected directly to the gate driver's source reference node. The drain tab requires ≥200 mm² copper area for thermal performance, and gate loop inductance must be minimized using tight gate-source routing-per Infineon's AN2019-04 layout guidelines for CFD7A devices.

IPBE65R190CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 190mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1291 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 77W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-11

IPBE65R190CFD7AATMA1 FAQ

1.How can I place an order for IPBE65R190CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPBE65R190CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPBE65R190CFD7AATMA1 reliable?

The price and inventory of IPBE65R190CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPBE65R190CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPBE65R190CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPBE65R190CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPBE65R190CFD7AATMA1?

IPBE65R190CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPBE65R190CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPBE65R190CFD7AATMA1?

For technical support, including IPBE65R190CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPBE65R190CFD7AATMA1 requirements.

6.How does Aetrix verify that IPBE65R190CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPBE65R190CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPBE65R190CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPBE65R190CFD7AATMA1?

All IPBE65R190CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPBE65R190CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPBE65R190CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPBE65R190CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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