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Infineon Technologies IPBE65R230CFD7AATMA1

Name: IPBE65R230CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R230CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPBE65R230CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IPBE65R230CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 11A TO263-7

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Product details

Overview

IPBE65R230CFD7AATMA1 from Infineon is a 650 V, 230 mΩ automotive-qualified Superjunction MOSFET in D²-PAK (PG-TO263-7-11) package with Kelvin source pinout, integrated fast body diode (diF/dt = 1300 A/µs), and 100% avalanche tested. It delivers ultra-low Qrr (0.4 µC), low Eoss (3.0 µJ @ 400 V), and optimized RDS(on)×Qg FOM for high-efficiency PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPBE65R230CFD7AATMA1 datasheet, IPBE65R230CFD7AATMA1 pinout, IPBE65R230CFD7AATMA1 application, or IPBE65R230CFD7AATMA1 equivalent, key selection criteria include its Kelvin source configuration, 650 V blocking capability, 44 A pulsed drain current, AEC-Q101 qualification, and suitability for ZVS phase-shift full-bridge and LLC topologies under 475 V battery systems.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology to achieve superior RDS(on)×Eoss and RDS(on)×Qg figures of merit versus prior generations. Its integrated fast-recovery body diode enables hard-switched and resonant operation without external anti-parallel diodes in bidirectional converters.

The Kelvin source connection isolates sense and power return paths, enabling precise gate drive control and minimizing common-source inductance effects during high-diF/dt commutation. The D²-PAK 7-pin layout separates driver source (pins 3–7), gate (pin 1), and drain (tab), supporting robust PCB thermal and electrical design for automotive-grade power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400–475 V battery systems with margin for voltage transients and cosmic radiation effects.
R_DS(on), max	230 mΩ @ T_j = 150 °C - Defines conduction loss at full-load operating temperature in PFC boost or LLC primary switches.
Q_g, typ	23 nC - Determines gate drive power requirement and switching speed in 100–500 kHz resonant applications.
E_oss @ 400 V	3.0 µJ - Directly impacts turn-off energy loss and soft-switching feasibility in ZVS topologies.
di_F/dt	1300 A/µs - Supports fast synchronous rectification and high-frequency commutation without oscillation or shoot-through risk.
I_D,pulse	44 A - Specifies peak current capability for transient load conditions in on-board charger DC-DC stages.
T_j max	150 °C - Enables operation in under-hood environments with active thermal management.

Pinout & Package

Package: PG-TO263-7-11 (D²-PAK), surface-mount, isolated drain tab, 7-pin layout with Kelvin source configuration. Drain connects to exposed metal tab; pins 3–7 are paralleled driver source terminals; pin 1 is gate; pin 2 is power source (non-Kelvin).

Pin/Terminal	Circuit Role	Design Meaning
Drain tab	High-side power output / heat sink interface	Primary current path and thermal conduction path to PCB copper; electrically tied to internal MOSFET drain.
Pin 1	Gate	Control input for channel modulation; requires low-inductance gate loop due to fast switching capability.
Pin 2	Power Source (S)	Main source return for power current; not interchangeable with Kelvin source pins (3–7).
Pins 3–7	Kelvin Source (S_k)	Sense-only return for gate driver feedback; eliminates common-source inductance impact on switching waveform fidelity.

Key Features

Feature	Design Value
Integrated fast body diode	di_F/dt = 1300 A/µs and t_rr = 91 ns - Eliminates need for discrete anti-parallel diode in bidirectional LLC and PFC designs.
Kelvin source contact	Dedicated pins 3–7 isolated from power source (pin 2) - Enables stable gate drive under high di/dt, reducing voltage overshoot and improving EMI.
AEC-Q101 qualification	Validated for automotive powertrain and charging systems - Ensures reliability under temperature cycling, humidity, and mechanical stress per automotive standards.
Ultra-low R_DS(on) × Q_g FOM	230 mΩ × 23 nC = 5.29 Ω·nC - Delivers lower combined conduction and switching losses than prior CFD generations at 100–300 kHz.
100% single-pulse avalanche rated	E_AS = 52 mJ @ I_D = 3.0 A - Provides robustness against inductive switching faults without derating in critical OBC applications.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end in 3.3 kW–6.6 kW unidirectional OBCs operating from 350–475 V battery rails.

IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) boost topology, handling 10–25 A RMS input current.

Use Value: Low Q_rr (0.4 µC) and fast di_F/dt minimize reverse recovery loss and enable >98% efficiency at light load.

Use Scenario: Primary-side switch in 3.3 kW bi-directional OBC LLC stage with 400 V nominal bus.

IC Role / Device Role / Timing Role: ZVS-capable main switch with 3.0 µJ E_oss enabling soft turn-on down to 10% load.

Use Value: Kelvin source reduces gate ringing during high-di/dt transitions, improving timing accuracy and reducing dead-time dependency.

ZVS Phase-Shift Full-Bridge (PSFB)

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: High-side switch in PSFB converter for 800 V traction battery isolation in commercial EVs.

IC Role / Device Role / Timing Role: Hard-commutated switch with 120 V/ns dv/dt ruggedness and 650 V rating for 400 V+ bus operation.

Use Value: Avalanche-rated structure withstands voltage spikes during zero-voltage switching transitions without clamping circuits.

Use Scenario: Bidirectional power switch in V2G-enabled OBCs requiring reverse conduction and fast body diode recovery.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in both directions, leveraging integrated diode with 1300 A/µs di_F/dt.

Use Value: Eliminates need for separate SiC Schottky diodes, reducing BOM count and PCB area while maintaining <90 ns reverse recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ, Q_g = 52 nC, same package and AEC-Q101 rating	Higher conduction loss but better suited for lower-frequency (<100 kHz), higher-current OBC DC-DC stages	Select when system prioritizes R_DS(on) over switching loss and operates below 150 kHz.
IPP65R230CFD7AKSA1	Same R_DS(on) and Q_g, but TO-220FP package (no Kelvin source, no drain tab)	Limited to non-automotive, lower-power (<2 kW), non-ZVS applications due to thermal and switching constraints	Choose only for cost-sensitive industrial PFC where Kelvin source and AEC-Q101 are not required.

Compared with IPW65R041CFD7XKSA1 and IPP65R230CFD7AKSA1, IPBE65R230CFD7AATMA1 uniquely combines Kelvin source, AEC-Q101 qualification, and ultra-low Q_rr-making it the only option qualified for ZVS-enabled automotive OBCs demanding simultaneous high efficiency, reliability, and compact layout.

Availability

IPBE65R230CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive PFC modules requiring stable component supply, AEC-Q101 compliance, and high-reliability power switching under 150 °C junction temperature.

Supply support for IPBE65R230CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for automotive on-board chargers and high-efficiency resonant converters requiring AEC-Q101 qualification, fast body diodes, and Kelvin source architecture.

FAQ

Can IPBE65R230CFD7AATMA1 be used in linear mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined safe operating area in linear region make it unsuitable for analog amplification or constant-current regulation applications.

What is the purpose of separating pin 2 (power source) from pins 3–7 (Kelvin source)?

Pin 2 carries high-current source return, while pins 3–7 provide low-noise, low-inductance sensing for the gate driver's source reference. This separation prevents voltage drop across source bond wires from modulating the effective gate–source voltage during fast switching, ensuring accurate turn-on/turn-off timing and reducing gate oscillation.

Is the drain tab electrically isolated from the PCB mounting plane?

No-the drain tab is internally connected to the MOSFET drain and must be electrically isolated from other circuit nodes via insulating thermal pad or dielectric layer. It is not isolated from the die; therefore, direct soldering to a grounded copper pour without insulation will cause short-circuit failure.

Does the AEC-Q101 qualification cover all operating conditions in the datasheet?

AEC-Q101 validation covers stress tests (HTGB, HTRB, TC, UHAST, etc.) but does not extend to all electrical operating points. For applications exceeding 475 V blocking or involving cosmic radiation exposure (e.g., high-altitude EVs), Infineon requires early-stage customer evaluation and technical consultation per datasheet note in Table 4.

IPBE65R230CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1044 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3-10

IPBE65R230CFD7AATMA1 FAQ

1.How can I place an order for IPBE65R230CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPBE65R230CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPBE65R230CFD7AATMA1 reliable?

The price and inventory of IPBE65R230CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPBE65R230CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPBE65R230CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPBE65R230CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPBE65R230CFD7AATMA1?

IPBE65R230CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPBE65R230CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPBE65R230CFD7AATMA1?

For technical support, including IPBE65R230CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPBE65R230CFD7AATMA1 requirements.

6.How does Aetrix verify that IPBE65R230CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPBE65R230CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPBE65R230CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPBE65R230CFD7AATMA1?

All IPBE65R230CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPBE65R230CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPBE65R230CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPBE65R230CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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