Infineon Technologies IPC100N04S51R2ATMA1

Overview

IPC100N04S51R2ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TDSON-8-34 package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25°C, and 1.2 mΩ max R_DS(on) at V_GS = 10 V. It serves as a high-current, low-loss main switch in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPC100N04S51R2ATMA1 datasheet, IPC100N04S51R2ATMA1 pinout, IPC100N04S51R2ATMA1 application, or IPC100N04S51R2ATMA1 equivalent, key selection criteria include its 1.0 K/W junction-to-case thermal resistance, 175°C maximum operating temperature, 480 mJ single-pulse avalanche energy, and MSL1 reflow compatibility up to 260°C.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate plateau voltage of 4.4 V enables robust drive margin with standard 5 V logic-level controllers, while 99–131 nC total gate charge supports efficient high-frequency PWM operation up to 200 kHz.

The integrated body diode features 0.8–1.1 V forward voltage at 50 A and 66 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge topologies without external Schottky diodes. Thermal design leverages the exposed drain pad for direct PCB copper cooling (6 cm² area).

Key Specifications

Pinout & Package

Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-drain QFN with 5.15 mm × 6.25 mm footprint and 1.0 mm height. Drain connected to bottom thermal pad (pins 1–3, 5–8); source on pins 4 and 6; gate on pin 7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4LF8AG and IRL1404ZPBF, IPC100N04S51R2ATMA1 delivers superior thermal performance (1.0 K/W vs. ≥2.5 K/W), lower switching loss (99 nC vs. 145 nC), and guaranteed automotive qualification-making it the optimal choice for space-constrained, high-reliability 40 V automotive power stages.

Availability

IPC100N04S51R2ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and start-stop battery management requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPC100N04S51R2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing facilities.

This part belongs to the OptiMOS™-5 product line, engineered specifically for high-efficiency, high-reliability 12 V and 48 V automotive power conversion where low R_DS(on), robust avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPC100N04S51R2ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V to ensure full enhancement while maintaining safe margin below the 20 V limit, especially under transient conditions.

Can IPC100N04S51R2ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (shown in Figure 8 of the datasheet) ensures inherent current sharing when paralleled. However, matched gate drive layout (equal trace length/inductance) and symmetrical thermal mounting are required to prevent current imbalance and localized overheating at >200 A aggregate current.

Does IPC100N04S51R2ATMA1 require a gate resistor, and what value is recommended?

A gate resistor is required to dampen ringing and control dV/dt. Based on typical gate charge (99–131 nC) and target rise time (<25 ns), a 3.5 Ω resistor is recommended per the datasheet's dynamic test conditions (page 3). Values between 2.2 Ω and 5.6 Ω balance switching speed, EMI, and gate driver stress in 100–200 kHz applications.

Is the thermal pad on the bottom of IPC100N04S51R2ATMA1 electrically isolated?

No-the exposed thermal pad is internally connected to the drain terminal (pins 1–3, 5–8). It must be soldered to a large copper pour tied to the system ground plane or high-side DC bus, depending on circuit topology. Electrical isolation would compromise thermal performance and violate the PG-TDSON-8-34 mechanical specification.