Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPC100N04S52R8ATMA1

Name: IPC100N04S52R8ATMA1
Brand: Infineon Technologies
SKU: IPC100N04S52R8ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPC100N04S52R8ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IPC100N04S52R8ATMA1.pdf

Description:: MOSFET N-CH 40V 100A 8TDSON-34

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,819

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPC100N04S52R8ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-5 power MOSFET designed for automotive high-current switching in 40 V systems. It delivers 100 A continuous drain current at T_C = 25 °C, 2.8 mΩ max R_DS(on) at V_GS = 7 V / I_D = 50 A, and operates up to 175 °C junction temperature-used in engine control unit (ECU) high-side load switches.

For engineers reviewing the IPC100N04S52R8ATMA1 datasheet, IPC100N04S52R8ATMA1 pinout, IPC100N04S52R8ATMA1 application, or IPC100N04S52R8ATMA1 equivalent, key selection criteria include avalanche ruggedness (66 mJ single-pulse), thermal resistance (2 K/W j–case), gate charge profile (Q_g = 34–45 nC), and AEC-Q101 qualification for under-hood deployment.

Technical Context

This device implements a trench-gate silicon MOSFET architecture optimized for low conduction loss and fast switching in 12 V/24 V automotive battery rails. Its 2.8 mΩ R_DS(on) enables high-efficiency DC motor drives and solenoid control, while 400 A pulsed drain capability supports short-circuit robustness in starter relays and HVAC actuators.

Thermal design is enabled by PG-TDSON-8-33 package with exposed drain pad and 2 K/W junction-to-case resistance. The gate plateau voltage of 4.8 V ensures stable turn-on under noisy vehicle electrical environments, and 100% production-tested avalanche performance guarantees reliability in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V automotive systems including load-dump transients.
R_DS(on) max	2.8 mΩ at V_GS = 7 V / I_D = 50 A - Enables <1.4 W conduction loss at 50 A, reducing heatsink requirements.
I_D cont	100 A at T_C = 25 °C - Supports high-power body control modules and electric power steering pre-drivers.
E_AS	66 mJ single-pulse - Withstands inductive energy from fuel injectors or fan motors without failure.
T_j max	+175 °C - Certified for under-hood operation near exhaust manifolds or turbochargers.
Q_g	34–45 nC - Enables efficient gate driving with standard 1 A peak drivers at 100 kHz PWM frequencies.
R_thJC	2 K/W - Allows direct thermal coupling to PCB copper or heatsink for compact ECU designs.

Pinout & Package

Delivered in PG-TDSON-8-33 (exposed drain) package: thermally enhanced 8-pin surface-mount outline with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch. Drain terminals occupy pins 1–3 and 5–8; source on pin 4; gate on pin 6.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6,7,8	Drain (D)	High-current output path; electrically and thermally connected to exposed copper pad for low-inductance, low-R_DS(on) layout.
4	Source (S)	Reference node for gate drive and current sensing; tied to ground plane in half-bridge configurations.
6	Gate (G)	Control input requiring <4.8 V threshold; isolated from drain by 2000–2600 pF C_iss for EMI-controlled switching.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test conditions including temperature cycling, HTRB, and UHAST-required for ECU, transmission, and ADAS subsystems.
100% avalanche tested	Each unit passes production-level single-pulse avalanche test at 85 A, ensuring field reliability in inductive load switching.
MSL1 rating	Rated for peak reflow up to 260 °C-compatible with standard lead-free SMT assembly without popcorn or delamination risk.
Green product (RoHS)	Lead-free, halogen-free, and compliant with EU RoHS Directive 2011/65/EU-meets OEM environmental sourcing mandates.
OptiMOS™-5 technology	Optimized trench cell design reduces Q_g/R_DS(on) ratio by ~25% vs. prior generation-improves efficiency in 100 kHz+ motor control.

Applications

Engine Control Unit (ECU) Load Switch

Electric Power Steering (EPS) Pre-driver

Use Scenario: High-side switching of fuel injector solenoids and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12–40 V inductive loads with precise 1–10 ms pulse widths.

Use Value: 66 mJ avalanche energy absorbs back-EMF without snubbers; 175 °C rating allows placement near engine bay electronics.

Use Scenario: Driving gate of high-current inverter MOSFETs in EPS motor control modules.

IC Role / Device Role / Timing Role: Pre-driver stage delivering >100 A peak gate current to reduce inverter switching losses.

Use Value: Low 2.8 mΩ R_DS(on) minimizes pre-driver conduction loss; 45 nC Q_g enables fast gate charging at 20 kHz PWM.

Body Control Module (BCM) Relay Replacement

Heating/Ventilation/AC (HVAC) Actuator Driver

Use Scenario: Solid-state replacement of mechanical relays for door locks, window lifts, and lighting control.

IC Role / Device Role / Timing Role: Low-side or high-side load switch handling 30–80 A resistive/inductive loads.

Use Value: 100 A continuous rating eliminates relay contact wear; AEC-Q101 qualification ensures 15-year vehicle lifetime.

Use Scenario: Direct driving of HVAC blend door and mode actuators with stall-tolerant operation.

IC Role / Device Role / Timing Role: Bidirectional H-bridge half-bridge switch enabling reversible DC motor control.

Use Value: Integrated body diode (V_SD = 0.8–1.1 V) supports freewheeling during direction reversal; 400 A pulsed rating handles motor stall currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF6AG	R_DS(on) = 2.5 mΩ @ 10 V (lower), but only rated to 150 °C T_j and not AEC-Q101 certified.	Suitable for industrial motor drives but lacks automotive qualification for ECU use.	Select when higher ambient temperature margin is not required and AEC-Q101 is not mandated.
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V (higher), TO-220 package, no avalanche testing, MSL2 rating.	Limited to non-automotive, lower-reliability applications such as consumer power supplies.	Choose only for cost-sensitive prototyping where thermal and reliability constraints are relaxed.

Compared with STL220N4LF6AG and IRL1404ZPBF, IPC100N04S52R8ATMA1 uniquely combines AEC-Q101 certification, 175 °C operation, and production-tested avalanche ruggedness-making it the only qualified choice for safety-critical automotive power switching where thermal and transient robustness are non-negotiable.

Availability

IPC100N04S52R8ATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering modules, and body control modules requiring stable component supply across multi-year automotive production cycles.

Supply support for IPC100N04S52R8ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V vehicle electrical systems-including ECU, EPS, and ADAS subsystems.

FAQ

Is IPC100N04S52R8ATMA1 suitable for high-frequency PWM motor control?

Yes. With 34–45 nC total gate charge and 6–11 ns switching times (t_d(on), t_d(off)), it supports efficient PWM operation up to 200 kHz in brushed DC motor drives. Its low C_oss (550–730 pF) and controlled Q_gd/Q_gs ratio minimize switching loss and EMI in compact inverters.

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (single-layer, 70 µm thick) on FR4 PCB, mounted vertically in still air. Using this layout achieves R_thJA = 50 K/W; doubling copper area or adding thermal vias further improves heat dissipation.

Does IPC100N04S52R8ATMA1 include an integrated body diode?

Yes. It features a monolithic parasitic body diode with V_SD = 0.8–1.1 V at I_F = 50 A and T_j = 25 °C. This diode is rated for 100 A continuous forward current and supports freewheeling in half-bridge and H-bridge topologies.

Can IPC100N04S52R8ATMA1 be used in parallel configurations?

Yes. Its positive temperature coefficient for R_DS(on) (increases with T_j) enables stable current sharing. Layout symmetry, matched gate drive impedance, and thermal coupling between devices are critical-verified in Infineon's application note AN2015-09 for parallel MOSFET designs.

IPC100N04S52R8ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IPC100N04S52R8ATMA1 FAQ

1.How can I place an order for IPC100N04S52R8ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPC100N04S52R8ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPC100N04S52R8ATMA1 reliable?

The price and inventory of IPC100N04S52R8ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC100N04S52R8ATMA1 is usually 5 days.

3.What payment methods are accepted for IPC100N04S52R8ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC100N04S52R8ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPC100N04S52R8ATMA1?

IPC100N04S52R8ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPC100N04S52R8ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPC100N04S52R8ATMA1?

For technical support, including IPC100N04S52R8ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC100N04S52R8ATMA1 requirements.

6.How does Aetrix verify that IPC100N04S52R8ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPC100N04S52R8ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC100N04S52R8ATMA1 meets industry standards.

7.What is the process for return or replacement of IPC100N04S52R8ATMA1?

All IPC100N04S52R8ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC100N04S52R8ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPC100N04S52R8ATMA1 part is unused and in its original packaging.

Return procedure for IPC100N04S52R8ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …