Infineon Technologies IPC100N04S5L1R1ATMA1

Overview

IPC100N04S5L1R1ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level OptiMOS™-5 power MOSFET with 40 V V_DS, 1.1 mΩ R_DS(on) at V_GS = 4.5 V, 100 A continuous drain current at T_C = 100 °C, and 175 °C maximum junction temperature - designed for high-efficiency 12 V automotive power stages including BLDC motor drives and DC-DC converters.

For engineers reviewing the IPC100N04S5L1R1ATMA1 datasheet, IPC100N04S5L1R1ATMA1 pinout, IPC100N04S5L1R1ATMA1 application, or IPC100N04S5L1R1ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (480 mJ), thermal resistance (1.0 K/W j–case), and PG-TDSON-8-34 package compatibility with high-current PCB layouts.

Technical Context

This device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit in 12 V automotive systems. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while 100% avalanche testing ensures robustness under inductive switching stress.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 50 A and 64 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is anchored by a 1.0 K/W junction-to-case resistance and MSL1 reflow rating up to 260 °C.

Key Specifications

Pinout & Package

Delivered in PG-TDSON-8-34 (exposed drain pad) package: thermally enhanced 5 mm × 6 mm surface-mount outline with 8 terminals, where pins 1–3 and 5–7 are source connections, pin 4 is gate, and the bottom-side thermal pad is drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IPB100N04S5L1R1 and IPP100N04S5L1R1, IPC100N04S5L1R1ATMA1 delivers superior thermal performance in automotive-grade surface-mount form factor, enabling higher power density in engine bay and ADAS modules where MSL1 reflow and 175 °C operation are mandatory.

Availability

IPC100N04S5L1R1ATMA1 is available at Aetrix Electronics and suitable for automotive BLDC motor control, 12 V DC-DC conversion, and engine control unit power stages requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPC100N04S5L1R1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-current, high-reliability 12 V vehicle electrical systems demanding low R_DS(on), logic-level drive, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPC100N04S5L1R1ATMA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 0 V to 10 V for full enhancement and safe switching; 4.5 V is sufficient for rated R_DS(on). Transient overshoot must be clamped below ±16 V using gate resistors and Zener protection in high-dV/dt environments.

Does IPC100N04S5L1R1ATMA1 require a gate driver IC when used with a 3.3 V microcontroller?

No - its logic-level V_GS(th) range (1.2–2.0 V) and guaranteed R_DS(on) at 4.5 V allow direct connection to 3.3 V GPIO outputs. However, a small-signal buffer (e.g., TC4420) is recommended for >100 kHz switching to ensure fast turn-on/turn-off and minimize switching losses.

How is the 100 A current rating defined - is it limited by silicon or package?

The 100 A rating at T_C = 100 °C is package-limited. The silicon die can sustain ~264 A at 25 °C (calculated from R_thJC = 1.0 K/W and P_tot = 150 W), but thermal and bond-wire constraints of the PG-TDSON-8-34 package cap continuous current at 100 A under specified PCB cooling conditions.

Can IPC100N04S5L1R1ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig. 8 of datasheet) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and individual gate resistors are required. Derate total current by 10–15% for thermal coupling effects in dense multi-device layouts.