Infineon Technologies IPC100N04S5L2R6ATMA1

Overview

IPC100N04S5L2R6ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level OptiMOS™-5 power MOSFET in PG-TDSON-8-33 package, rated for 40 V V_DS, 2.6 mΩ R_DS(on) at V_GS = 4.5 V, and 100 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested (E_AS = 66 mJ at I_D = 50 A), targeting high-efficiency automotive power stages such as DC-DC converters and motor drivers.

For engineers reviewing the IPC100N04S5L2R6ATMA1 datasheet, IPC100N04S5L2R6ATMA1 pinout, IPC100N04S5L2R6ATMA1 application, or IPC100N04S5L2R6ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) with thermal robustness (R_thJC = 2.0 K/W), and automotive-grade reliability including MSL1 reflow rating and -55 °C to +175 °C operation.

Technical Context

This MOSFET uses silicon-based planar trench technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers, while its 2.6 mΩ R_DS(on) at 4.5 V enables high-current, low-voltage synchronous rectification without external gate boosting.

The device integrates a robust body diode with t_rr = 42 ns and Q_rr = 32 nC, supporting hard-switched and ZVS topologies. Thermal design is enabled by direct-drain thermal path in the PG-TDSON-8-33 package, delivering 2.0 K/W junction-to-case resistance under standard 6 cm² PCB copper layout.

Key Specifications

Pinout & Package

PG-TDSON-8-33 is a thermally enhanced surface-mount package with exposed drain pad on bottom side and 8-pin leadframe configuration. The drain connects directly to the PCB copper area for optimal heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IPB100N04S5L2R6A, IPC100N04S5L2R6ATMA1 offers superior thermal performance via PG-TDSON-8-33's direct-drain thermal path; versus STL110N4LF6AG, it delivers lower gate charge and guaranteed avalanche ruggedness-critical for motor control and safety-relevant power stages.

Availability

IPC100N04S5L2R6ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering systems, and HVAC blower motor drivers requiring stable component supply across production lifecycles.

Supply support for IPC100N04S5L2R6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-current, high-reliability 12 V vehicle electrical systems demanding low R_DS(on), logic-level drive, and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPC100N04S5L2R6ATMA1?

The absolute maximum gate-source voltage is ±16 V, as specified in the datasheet. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should limit V_GS to ≤12 V during transients and maintain tight control around the 1.6 V typical threshold to avoid partial turn-on during noise events.

Does IPC100N04S5L2R6ATMA1 require a gate resistor for automotive PWM applications?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during switching. With Q_g = 41–55 nC and typical 1 A gate drivers, a 4.7 Ω resistor yields ~20 ns rise time, balancing EMI and switching loss in 20–100 kHz motor control applications.

Can IPC100N04S5L2R6ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to prevent oscillation. Derate total current by 15% for two devices due to thermal coupling effects.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the integrated body diode is rated for 100 A continuous forward current and exhibits 0.8–1.1 V forward voltage at 50 A and 25 °C. However, its reverse recovery charge (Q_rr = 32 nC) and time (t_rr = 42 ns) necessitate careful dead-time optimization to avoid cross-conduction losses in synchronous rectification.