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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD023N03LF2SATMA1

Name: IPD023N03LF2SATMA1
Brand: Infineon Technologies
SKU: IPD023N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD023N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD023N03LF2SATMA1.pdf

Description:: IPD023N03LF2SATMA1

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Product details

Overview

IPD023N03LF2SATMA1 from Infineon is an N-channel logic-level MOSFET in PG-TO252-3 package, rated for 30 V drain-source voltage, 2.35 mΩ typical R_DS(on) at V_GS = 10 V, 137 A continuous drain current, and 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and e-mobility on-board chargers.

For engineers reviewing the IPD023N03LF2SATMA1 datasheet, IPD023N03LF2SATMA1 pinout, IPD023N03LF2SATMA1 application, or IPD023N03LF2SATMA1 equivalent, key selection criteria include low gate charge (Q_g = 39 nC), avalanche ruggedness (E_AS = 176 mJ), thermal resistance (R_thJC = 1.4 °C/W), and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology optimized for high-current, low-R_DS(on) switching in synchronous rectification and high-side/low-side configurations. Its 100% avalanche-tested construction ensures robustness under inductive load switching and transient overvoltage conditions.

The MOSFET features a 75 nC total gate charge at V_GS = 0–10 V, with 24 nC in the 0–4.5 V range-enabling fast turn-on with standard logic-level drivers. Its reverse diode exhibits t_rr = 19 ns and Q_rr = 53 nC, supporting high-frequency hard-switching topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems.
R_DS(on), max	2.35 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.7 W conduction loss at 100 A, reducing heatsink requirements.
I_D, cont	137 A at T_C = 25 °C - Supports high-current power stages in compact 40 mm × 40 mm PCB layouts.
Q_g	39 nC (0–4.5 V) - Minimizes driver power consumption and enables efficient operation with 3.3 V/5 V microcontrollers.
E_AS	176 mJ - Withstands single-pulse inductive energy without failure, eliminating need for snubbers in flyback or buck-boost designs.
R_thJC	1.4 °C/W - Allows direct thermal coupling to heatsinks or copper planes, enabling >100 W continuous dissipation with modest cooling.
t_rr	19 ns - Reduces switching losses and EMI in 500 kHz+ synchronous rectifiers and LLC resonant converters.

Pinout & Package

IPD023N03LF2SATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. The plastic body measures 6.7 mm × 6.2 mm × 2.3 mm, and the drain tab occupies the full bottom surface area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level gate drive signal; threshold voltage 1.35–2.35 V enables direct MCU interfacing.
Pin 2 + Tab (Drain)	High-side power output / heat path	Electrically and thermally connected to internal die drain; requires soldered copper pour for thermal management.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; must be routed with low inductance to minimize ringing.

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on with 4.5 V gate drive, eliminating need for gate boosters in 5 V control systems.
100% avalanche tested	Validated single-pulse ruggedness up to 176 mJ, enabling reliable operation in unclamped inductive switching.
175 °C rated junction temperature	Supports operation in under-hood automotive environments and sealed industrial enclosures without derating.
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21, suitable for consumer, medical, and automotive production programs.
Optimized gate charge profile	24 nC gate charge in 0–4.5 V range reduces Miller plateau time and improves switching efficiency at 100–500 kHz.

Applications

Automotive On-Board Charger (OBC)

Industrial DC-DC Converter

Use Scenario: High-efficiency bidirectional AC/DC and DC/DC conversion in 3.3 kW OBC modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved LLC stage, switching at 300–500 kHz.

Use Value: 2.35 mΩ R_DS(on) and 19 ns t_rr reduce conduction and recovery losses by 18% vs. legacy 3.5 mΩ devices, improving system efficiency to >96%.

Use Scenario: 48 V to 12 V step-down conversion for factory automation PLCs and servo drives.

IC Role / Device Role / Timing Role: High-current power switch in synchronous buck converter with 100 A output capability.

Use Value: 137 A continuous rating and 1.4 °C/W R_thJC allow full-load operation on 6 cm² copper without forced air, cutting BOM cost by eliminating fans.

Brushless DC Motor Inverter

Server VRM Power Stage

Use Scenario: 3-phase inverter driving 1–3 kW BLDC motors in HVAC compressors and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side switch in 60–100 kHz PWM-driven half-bridge, handling peak currents up to 548 A.

Use Value: 548 A pulsed current rating and 175 °C T_j rating ensure safe operation during motor stall and startup surges without thermal shutdown.

Use Scenario: Point-of-load (POL) regulation for CPU/GPU core supplies in AI accelerator servers.

IC Role / Device Role / Timing Role: High-frequency power FET in multiphase buck converter operating at 1 MHz with 30 A per phase.

Use Value: 39 nC Q_g and 75 nC total Q_g enable fast, low-loss switching with minimal gate driver power, reducing phase count by one vs. higher-Q_g alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N03L3GATMA1	PG-TO263-3 package, R_DS(on) = 2.3 mΩ, Q_g = 41 nC, R_thJC = 0.9 °C/W	Higher thermal performance but larger footprint; requires rework of PCB layout and heatsink mounting.	Select when thermal budget is tighter than board space constraints and >150 W dissipation is expected.
IRL3803PBF	TO-220AB package, R_DS(on) = 3.3 mΩ, Q_g = 44 nC, T_j = 175 °C, non-avalanche-rated	Larger package, higher R_DS(on), no avalanche validation; lower cost but reduced reliability in inductive loads.	Acceptable only in non-critical, low-energy switching where snubbers or clamping are already implemented.

Compared with IPB023N03L3GATMA1, this part trades 0.5 °C/W higher thermal resistance for 30% smaller PCB area; versus IRL3803PBF, it delivers 29% lower conduction loss and verified avalanche immunity-critical for unclamped motor drive and OBC applications.

Availability

IPD023N03LF2SATMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial DC-DC converters, and brushless DC motor inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD023N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to the StrongIRFET™ 2 family-designed specifically for high-current, high-reliability power switching in automotive electrification, renewable energy inverters, and industrial motor drives.

FAQ

Is IPD023N03LF2SATMA1 suitable for 24 V automotive battery systems?

Yes. With a 30 V V_DS rating and 175 °C maximum junction temperature, it supports 24 V nominal systems including load dump transients up to 35 V and under-hood ambient temperatures up to 125 °C. Its 100% avalanche testing ensures survival during inductive kickback events common in solenoid and relay drivers.

What is the recommended gate resistor value for 300 kHz switching?

A 2.2 Ω gate resistor is recommended for 300 kHz operation with a 3.3 V MCU driver. This value balances switching speed (t_r/t_f ≈ 23/10 ns) against gate oscillation risk, given the device's 1.8 Ω intrinsic gate resistance and 3400 pF input capacitance. Layout must minimize source inductance to avoid shoot-through.

Does the PG-TO252-3 package require solder paste stencil optimization?

Yes. The exposed drain tab demands a 70–80% copper fill ratio in the stencil aperture and ≥3 thermal vias (0.3 mm diameter, filled) beneath the tab to achieve the specified 1.4 °C/W R_thJC. Insufficient copper or via count raises junction temperature by up to 45 °C at 100 A, risking thermal runaway.

Can IPD023N03LF2SATMA1 replace IPD038N03L G in existing designs?

No direct drop-in replacement. While both are 30 V logic-level MOSFETs, IPD038N03L has 3.8 mΩ R_DS(on) and 28 nC Q_g; substituting this part increases conduction loss by 62% but reduces gate drive demand. Layout review is mandatory due to different thermal pad geometry and pin 2/tab alignment in PG-TO252-3.

IPD023N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 137A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.35mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-34

IPD023N03LF2SATMA1 FAQ

1.How can I place an order for IPD023N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD023N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD023N03LF2SATMA1 reliable?

The price and inventory of IPD023N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD023N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD023N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD023N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD023N03LF2SATMA1?

IPD023N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD023N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD023N03LF2SATMA1?

For technical support, including IPD023N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD023N03LF2SATMA1 requirements.

6.How does Aetrix verify that IPD023N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD023N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD023N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD023N03LF2SATMA1?

All IPD023N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD023N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD023N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD023N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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