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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD029N04NF2SATMA1

Name: IPD029N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPD029N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD029N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD029N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD029N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO252-3 package, rated for 40 V drain-source voltage, 2.9 mΩ typical R_DS(on) at V_GS = 10 V, 131 A continuous drain current, and 100% avalanche tested. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and e-mobility on-board chargers.

For engineers reviewing the IPD029N04NF2SATMA1 datasheet, IPD029N04NF2SATMA1 pinout, IPD029N04NF2SATMA1 application, or IPD029N04NF2SATMA1 equivalent, key selection criteria include low gate charge (Q_g = 45 nC), fast switching (t_d(on) = 14 ns), robust thermal resistance (R_thJC = 1.4 °C/W), and strong avalanche capability (E_AS = 71 mJ).

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current, medium-voltage applications. Its gate threshold voltage (V_GS(th) = 2.1–3.4 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while the integrated body diode supports synchronous rectification with t_rr = 27–41 ns and Q_rr = 39–94 nC.

The MOSFET features a Kelvin source configuration (pin 3 is source, tab is drain) enabling accurate high-side current sensing and reduced gate loop inductance. Thermal design leverages its low R_thJC of 1.4 °C/W and 6 cm² PCB copper area for efficient heat transfer to ambient via the exposed drain tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V battery systems and industrial DC rails
R_DS(on), max	2.9 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 70 A, critical for high-current power stages
I_D, cont	131 A at T_C = 25 °C - Supports high-power motor control and server VRMs without parallel devices
Q_g	45 nC - Reduces gate driver power demand and enables >1 MHz switching in GaN-compatible topologies
E_AS	71 mJ - Withstands repetitive inductive switching stress without derating in automotive load-dump conditions
R_thJC	1.4 °C/W - Allows direct thermal coupling to heatsink via drain tab, simplifying thermal layout
t_rr	27–41 ns - Minimizes reverse recovery loss and EMI in hard-switched synchronous buck converters

Pinout & Package

PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low input capacitance (C_iss = 3200 pF) reduces driver loading
Pin 2 (Drain) + Tab	High-current power output	Exposed metal tab connects directly to PCB copper pour for low-inductance, high-current path and thermal dissipation
Pin 3 (Source)	Reference node	Provides Kelvin sense point for accurate current monitoring and stable gate drive return

Key Features

Feature	Design Value
StrongIRFET™2 trench technology	Delivers 2.9 mΩ R_DS(on) with 45 nC Q_g, balancing conduction and switching loss better than prior-generation DPAK MOSFETs
100% avalanche tested	Guarantees single-pulse energy handling up to 71 mJ, eliminating need for external snubbers in inductive loads
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21, supporting automotive and industrial environmental compliance requirements
Optimized for wide range of applications	Validated across 12–48 V systems including BLDC motor drives, telecom PSUs, and bidirectional DC-DC converters

Applications

Automotive On-Board Charger (OBC)

Industrial Motor Drive Inverter

Use Scenario: High-frequency interleaved PFC and DC-DC stages in 3.3–22 kW OBCs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier and secondary-side high-side switch in phase-shifted full-bridge topology.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and recovery losses by >15% vs. legacy 40 V MOSFETs, improving system efficiency to >96%.

Use Scenario: 3-phase inverter stage for 5–10 kW servo and pump drives.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge modules.

Use Value: 131 A rating and 1.4 °C/W R_thJC allow operation at 85 °C case temperature without derating, reducing heatsink size by 30%.

Server Voltage Regulator Module (VRM)

Telecom 48 V Intermediate Bus Converter

Use Scenario: Multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-current, low-V_DS power stage switch operating at 500 kHz–1 MHz.

Use Value: 45 nC Q_g and 14 ns t_d(on) enable clean gate drive with minimal overshoot, reducing EMI filter cost by 20%.

Use Scenario: Isolated forward or active-clamp forward converter stepping 48 V down to 12 V/5 V for base station subsystems.

IC Role / Device Role / Timing Role: Primary-side main switch handling 20–40 A peak current at 200–500 kHz.

Use Value: Avalanche ruggedness (71 mJ) eliminates need for clamping circuits during transient overloads, improving reliability in harsh RF environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ (lower), Q_g = 52 nC (higher), TO-263-3 package	Higher thermal mass but larger footprint; less suitable for space-constrained DPAK layouts	Prefer when lowest conduction loss dominates over gate drive complexity and board area
IXTP130N04S2	R_DS(on) = 3.2 mΩ (higher), Q_g = 38 nC (lower), TO-220AB package	No exposed drain tab; requires separate heatsink mounting and increases thermal resistance by ~3×	Prefer when mechanical mounting flexibility outweighs thermal performance needs

Compared with STL220N4F7AG and IXTP130N04S2, IPD029N04NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, compact DPAK footprint, and integrated thermal path-making it ideal for high-density, high-reliability 48 V power conversion where PCB real estate and thermal management are co-constrained.

Availability

IPD029N04NF2SATMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial motor drives, server VRMs, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for IPD029N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This part belongs to the StrongIRFET™2 product line, engineered specifically for high-current, medium-voltage power switching in automotive, industrial, and computing applications where low R_DS(on), fast switching, and avalanche ruggedness are jointly required.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit under specified thermal conditions. Derating is required above T_C = 25 °C per the de-rating curve in Figure 2 of the datasheet, with full 131 A current supported only when case temperature remains ≤25 °C with 50 °C/W ambient thermal resistance.

Is IPD029N04NF2SATMA1 suitable for synchronous rectification?

Yes-it features a fast, soft-recovery body diode with t_rr = 27–41 ns and Q_rr = 39–94 nC, validated for synchronous rectification in buck and LLC topologies. The Kelvin source pin (Pin 3) enables precise current sensing and minimizes common-source inductance during high-di/dt commutation.

Does this MOSFET require a negative gate voltage for safe turn-off?

No-its gate threshold voltage (2.1–3.4 V) and gate oxide robustness support reliable turn-off with 0 V gate drive. However, applying –5 V improves noise immunity in high-dV/dt environments; the absolute maximum V_GS rating is ±20 V, so negative bias within that range is permissible but not mandatory.

How does the PG-TO252-3 package compare thermally to TO-252 variants from other manufacturers?

Infineon's PG-TO252-3 uses a standardized DPAK outline with enhanced copper clip construction and optimized die attach, achieving R_thJC = 1.4 °C/W-0.3–0.5 °C/W lower than typical industry-standard TO-252-3 packages. This is verified by JEDEC JESD51-14 transient dual-interface testing and reflected in the 107 W P_tot rating at T_C = 25 °C.

IPD029N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD029N04NF2SATMA1 FAQ

1.How can I place an order for IPD029N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD029N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD029N04NF2SATMA1 reliable?

The price and inventory of IPD029N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD029N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD029N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD029N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD029N04NF2SATMA1?

IPD029N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD029N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD029N04NF2SATMA1?

For technical support, including IPD029N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD029N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPD029N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD029N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD029N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD029N04NF2SATMA1?

All IPD029N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD029N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD029N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD029N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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