Infineon Technologies IPD033N06NATMA1

Overview

IPD033N06NATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 60 V V_DS, 3.3 mΩ R_DS(on) max at V_GS = 10 V, 90 A continuous drain current, and 100% avalanche tested ruggedness. It uses a PG-TO252-3 (D-PAK) package with exposed drain tab for low thermal resistance.

For engineers reviewing the IPD033N06NATMA1 datasheet, IPD033N06NATMA1 pinout, IPD033N06NATMA1 application, or IPD033N06NATMA1 equivalent, key selection criteria include R_DS(on) at 6 V gate drive, Q_g = 38–44 nC for fast switching, Q_oss = 44 nC for reduced turn-off loss, and thermal resistance R_thJC = 0.8 K/W for high-power density designs.

Technical Context

This OptiMOSTM device employs trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust switching performance. Its gate threshold voltage (V_GS(th) = 2.1–3.3 V) enables reliable turn-on with standard 5 V or 3.3 V logic-level drivers, and its low Q_gd (7–10 nC) supports high-frequency operation up to 1 MHz in synchronous buck topologies.

The integrated body diode exhibits fast reverse recovery (t_rr = 39–63 ns, Q_rr = 45 nC) and low forward voltage (V_SD = 0.9–1.2 V at 45 A), minimizing conduction loss during dead-time conduction in SR applications. Thermal design is supported by R_thJA = 40 K/W on 6 cm² PCB copper and R_thJC = 0.8 K/W for heatsink mounting.

Key Specifications

Pinout & Package

IPD033N06NATMA1 uses the PG-TO252-3 (D-PAK) package with an exposed drain tab for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL220N6F7 and IRF7470PBF, IPD033N06NATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, full avalanche ruggedness, and industry-standard D-PAK thermal performance-making it preferred for high-reliability, high-efficiency 48–60 V power stages.

Availability

IPD033N06NATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, industrial motor drives, and automotive on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPD033N06NATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's OptiMOSTM 60 V power transistor family, engineered specifically for high-efficiency, high-current synchronous rectification and switching in enterprise and industrial power supplies.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD033N06NATMA1 has a rated operating junction temperature range of –55 °C to +175 °C. For continuous operation at full 90 A drain current, thermal design must limit T_j to ≤150 °C to maintain long-term reliability and avoid derating. The device's R_thJC = 0.8 K/W enables this with proper heatsinking at T_C ≤ 100 °C.

Is this MOSFET suitable for gate driving with 5 V logic?

Yes. With V_GS(th) = 2.1–3.3 V and R_DS(on) specified down to V_GS = 6 V (4.1–5.0 mΩ), the IPD033N06NATMA1 fully turns on using standard 5 V logic-level drivers. However, R_DS(on) increases ~25% versus 10 V drive, so efficiency-critical designs should use ≥6 V gate drive.

Does the body diode support continuous reverse recovery stress?

The integrated body diode is characterized for t_rr = 39–63 ns and Q_rr = 45 nC under defined test conditions (V_R = 30 V, I_F = 89 A, di_F/dt = 100 A/µs). It is designed for repetitive synchronous rectification-not unidirectional freewheeling-so sustained reverse recovery without gate bias is not recommended beyond datasheet limits.

How does the D-PAK package compare thermally to TO-252 variants from other manufacturers?

The PG-TO252-3 package used in IPD033N06NATMA1 features an exposed drain tab with R_thJC = 0.8 K/W, matching best-in-class thermal performance of competing D-PAK devices. Unlike some alternatives, its tab geometry and solder pad recommendations (6 cm² copper) are validated per JEDEC JESD51-2, ensuring repeatable thermal performance in production assembly.