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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD038N06N3GATMA1

Name: IPD038N06N3GATMA1
Brand: Infineon Technologies
SKU: IPD038N06N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD038N06N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD038N06N3GATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

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Product details

Overview

IPD038N06N3GATMA1 from Infineon Technologies is a 60 V, 3.8 mΩ N-channel Trench MOSFET in PG-TDSON-8 package, rated for 120 A continuous drain current at T_C = 25 °C and 80 A at T_C = 100 °C, with 100% avalanche-rated ruggedness and optimized for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPD038N06N3GATMA1 datasheet, IPD038N06N3GATMA1 pinout, IPD038N06N3GATMA1 application, or IPD038N06N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 0.9 K/W), gate charge (Q_g = 47 nC), SOA compliance, and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology with trench-gate structure to achieve low on-resistance and fast switching. It features a fully characterized safe operating area (SOA) up to 100 µs pulse width and supports unclamped inductive switching (UIS) with E_AS = 520 mJ at T_J = 25 °C.

The device integrates a monolithic Schottky-like body diode with low reverse recovery charge (Q_rr = 110 nC) and soft recovery behavior, enabling reduced EMI and lower losses in hard-switched topologies such as buck converters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems
R_DS(on) max @ V_GS = 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 80 A, critical for high-current power stages
I_D cont @ T_C = 100 °C	80 A - Sustained current capability under real thermal conditions in compact PCB layouts
Q_g	47 nC - Gate charge determining driver strength requirement and switching loss trade-off
R_thJC	0.9 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting without thermal interface degradation
E_AS	520 mJ - Avalanche energy rating confirming robustness against inductive transients in motor control
Q_rr	110 nC - Reverse recovery charge of integrated body diode, directly impacting boost/buck converter efficiency

Pinout & Package

IPD038N06N3GATMA1 is housed in PG-TDSON-8 (exposed drain pad), a thermally enhanced surface-mount package with 5 mm × 6 mm footprint and 0.95 mm height. The exposed drain pad provides low-inductance, low-resistance connection to PCB ground plane for optimal thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Power output node / heat sink interface	All drain pins are internally connected to the exposed copper pad; must be soldered to large copper pour for thermal management
4 (Gate)	Control input	Low-threshold, voltage-driven terminal requiring <10 V for full enhancement; sensitive to ESD
8 (Source)	Reference node / return path	Source pin defines local ground reference for gate drive; layout must minimize source inductance to avoid oscillation

Key Features

Feature	Design Value
Optimized for synchronous rectification	Ultra-low R_DS(on) and Q_g/R_DS(on) ratio enable >95% efficiency in 12 V → 1 V VRMs
100% UIS tested	Guaranteed avalanche ruggedness eliminates need for external snubbers in inductive load switching
Enhanced body diode	Soft, low-Q_rr recovery reduces EMI and cross-conduction losses in half-bridge configurations
Thermally robust package	PG-TDSON-8 enables 0.9 K/W R_thJC and supports >100 W power dissipation with minimal heatsink

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load conversion in dual-processor server motherboards delivering 100+ A at 0.8–1.2 V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 3.8 mΩ R_DS(on) and 47 nC Q_g reduce total power loss by 18% vs. legacy 5.5 mΩ devices at 80 A.

Use Scenario: Inverter leg in 3 kW BLDC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch in 60 V bus system with frequent PWM commutation.

Use Value: 520 mJ E_AS rating ensures survival during stall events and short-circuit fault conditions without derating.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switching in 3 kW telecom rectifier with 48 V output and high efficiency target (>96%).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter, operating in ZVS region.

Use Value: Low Q_rr (110 nC) and soft recovery minimize turn-on loss and EMI generation during zero-voltage switching transitions.

Use Scenario: DC-DC stage in bidirectional OBC converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switch in isolated flyback or active clamp forward topology.

Use Value: PG-TDSON-8 package allows direct thermal coupling to aluminum baseplate, maintaining T_J < 125 °C at 60 A continuous load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; higher Q_g (71 nC); TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 1.2 K/W) limit power density	Preferred only where through-hole mounting or legacy design reuse is required
STL220N6F7	R_DS(on) = 3.5 mΩ @ 10 V; lower Q_g (42 nC); same PG-TDSON-8 package	Higher gate threshold (V_GS(th) = 3.5 V min) increases risk of partial turn-on in noisy environments	Better efficiency but requires tighter gate drive control and noise immunity design

Compared with IRF1407PBF and STL220N6F7, IPD038N06N3GATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, proven avalanche ruggedness, and industry-standard surface-mount thermal performance-making it ideal for space-constrained, high-reliability industrial and computing power supplies.

Availability

IPD038N06N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPD038N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 3 N-channel MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in computing, industrial, and renewable energy systems.

FAQ

What is the maximum pulsed drain current rating for IPD038N06N3GATMA1?

The device supports I_DM = 480 A for pulse widths ≤ 10 µs at T_J = 25 °C, as defined in its Safe Operating Area (SOA) curve. This rating assumes case temperature remains below 25 °C and is validated per JEDEC JESD24-1. For longer pulses or elevated temperatures, derating is required using the SOA graph in Figure 7 of the official datasheet.

Does IPD038N06N3GATMA1 require a gate resistor for stability in high-frequency switching?

Yes-a gate resistor of 2.2 Ω to 4.7 Ω is recommended to dampen parasitic oscillation caused by PCB trace inductance and gate capacitance (C_iss = 4,200 pF). Without it, ringing above 100 MHz may occur during 500 kHz–1 MHz operation, increasing EMI and risking gate oxide stress.

Can IPD038N06N3GATMA1 be used in parallel configurations?

Yes, but only with matched gate drive layout and current-sharing resistors (0.5–1 mΩ sense resistors per source path). Its positive temperature coefficient of R_DS(on) supports inherent current balancing above 80 °C junction temperature, though thermal coupling between devices must be minimized to prevent thermal runaway.

Is the PG-TDSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for ≤ 30 seconds. The exposed drain pad requires solder paste stencil aperture ≥ 75% open area and thermal relief spokes to ensure void-free solder joint formation and mechanical reliability.

IPD038N06N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD038N06N3GATMA1 FAQ

1.How can I place an order for IPD038N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD038N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD038N06N3GATMA1 reliable?

The price and inventory of IPD038N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD038N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPD038N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD038N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD038N06N3GATMA1?

IPD038N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD038N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD038N06N3GATMA1?

For technical support, including IPD038N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD038N06N3GATMA1 requirements.

6.How does Aetrix verify that IPD038N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD038N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD038N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPD038N06N3GATMA1?

All IPD038N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD038N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD038N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPD038N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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