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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD047N03LF2SATMA1

Name: IPD047N03LF2SATMA1
Brand: Infineon Technologies
SKU: IPD047N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD047N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD047N03LF2SATMA1.pdf

Description:: MOSFET N-CH 30V 71A TO-252

Quantity:: RFQ Add To RFQ list

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Inventory:2,000

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Product details

Overview

IPD047N03LF2SATMA1 from Infineon is a logic-level N-channel MOSFET in PG-TO252-3 package, rated for 30 V V_DS, 4.7 mΩ R_DS(on) at V_GS = 10 V, 71 A continuous drain current, and 100% avalanche tested. It serves as a high-efficiency power switch in DC-DC converters, motor drivers, and e-fuse circuits operating up to 175 °C.

For engineers reviewing the IPD047N03LF2SATMA1 datasheet, IPD047N03LF2SATMA1 pinout, IPD047N03LF2SATMA1 application, or IPD047N03LF2SATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g = 17 nC, thermal resistance R_thJC = 2.3 °C/W, and logic-level gate drive compatibility with 3.3 V/5 V controllers.

Technical Context

This StrongIRFET™ 2 device uses trench-based silicon technology optimized for low conduction and switching losses in high-current, high-frequency synchronous rectification and load switching. Its 4.7 mΩ R_DS(on) at 10 V and 5.1 mΩ at 4.5 V enable efficient operation in 12 V input systems with <1.0 V diode forward voltage (V_SD) and 15 ns reverse recovery time.

The MOSFET features a robust 54 mJ single-pulse avalanche energy rating, 20 V gate-source voltage tolerance, and halogen-free, RoHS-compliant Pb-free plating. Its PG-TO252-3 package provides low-inductance source connection and direct thermal path via exposed drain tab for PCB copper area cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V bus applications with margin against transients
R_DS(on) max @ V_GS = 10 V	5.1 mΩ - Enables ≤1.5 W conduction loss at 71 A in thermally optimized layouts
I_D continuous	71 A @ T_C = 25 °C - Supports high-current power stages without forced air cooling
Q_g	17 nC - Low gate charge reduces driver power and enables >1 MHz switching in SMPS
R_thJC	2.3 °C/W - Allows junction temperature control with minimal copper area on FR4 PCB
Avalanche energy E_AS	54 mJ - Withstands inductive turn-off stress in motor control and relay driving
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with 3.3 V microcontrollers and logic-level drivers

Pinout & Package

PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection; compact footprint (6.5 × 6.2 × 2.3 mm), surface-mount, lead-free, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level gate drive; low input capacitance (C_iss = 1400 pF) minimizes driver loading
Pin 2 + Tab (Drain)	High-side power terminal	Exposed metal tab electrically and thermally connected to drain; requires soldered copper pour for heat dissipation
Pin 3 (Source)	Reference and return path	Low-inductance source connection critical for minimizing switching ringing in high-di/dt applications

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on with 4.5 V gate voltage, compatible with 3.3 V/5 V MCU GPIOs and PWM controllers
100% avalanche tested	Each unit validated for single-pulse avalanche ruggedness up to 54 mJ, eliminating need for external snubbers in inductive loads
175 °C rated junction	Enables operation in under-hood automotive, industrial motor drives, and sealed power supplies without derating
Low Q_gd/Q_g ratio	Q_gd = 3.3 nC / Q_g = 17 nC → 19.4% - Reduces Miller-induced shoot-through risk in half-bridge configurations
Optimized body diode	V_SD = 0.87 V @ 40 A, t_rr = 15 ns - Minimizes reverse recovery loss in synchronous buck and OR-ing applications

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Driver

Use Scenario: High-side load switching for LED headlamps, solenoids, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Power switch controlling current flow to resistive/inductive loads; operates in linear and saturated modes during PWM dimming and stall protection.

Use Value: 4.7 mΩ R_DS(on) limits I²R heating at 30 A loads; 175 °C rating ensures reliability across cabin temperature extremes.

Use Scenario: H-bridge upper-leg switch in brushed DC motor control for conveyor systems and robotic joints.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver; handles bidirectional current with fast 6.4 ns fall time.

Use Value: Low Q_g (17 nC) and Q_gd (3.3 nC) reduce gate driver stress and improve efficiency at 20–100 kHz PWM frequencies.

Server VRM Synchronous Rectifier

Smart Power Outlet with e-Fuse

Use Scenario: Secondary-side synchronous rectification in 48 V to 12 V intermediate bus converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-V_DS power switch replacing Schottky diodes; commutated by precise timing signals from controller IC.

Use Value: V_SD = 0.87 V and t_rr = 15 ns cut conduction and recovery losses by >40% vs. discrete diode solutions.

Use Scenario: Solid-state circuit breaker in PoE-powered smart outlets with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Current-sense-enabled power switch; used with external current monitor and fast-turnoff logic for <100 µs fault response.

Use Value: 71 A I_D rating and 54 mJ E_AS support safe interruption of 30 A faults without destructive failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V; higher gate charge Q_g = 35 nC; same PG-TO252-3 package	Better conduction loss but slower switching; suited for lower-frequency, high-current DC loads	Select when thermal budget allows larger heatsink and switching frequency <200 kHz
IRL8721PBF	R_DS(on) = 6.8 mΩ @ 4.5 V; Q_g = 12 nC; TO-220AB package with higher R_thJA	Higher R_DS(on) increases conduction loss; through-hole mounting limits board density	Select only for legacy through-hole designs where surface-mount rework is prohibited

Compared with STL220N3LLH6 and IRL8721PBF, IPD047N03LF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and surface-mount thermal performance-ideal for space-constrained, medium-frequency (>300 kHz) power stages requiring logic-level drive.

Availability

IPD047N03LF2SATMA1 is available at Aetrix Electronics and suitable for automotive BCM modules, industrial motor drivers, server VRMs, and smart power outlets requiring stable component supply and long-term lifecycle support.

Supply support for IPD047N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and JEDEC standards.

This part belongs to the StrongIRFET™ 2 family-designed specifically for high-current, high-reliability power switching in automotive and industrial environments where avalanche ruggedness, thermal stability, and logic-level gate drive are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPD047N03LF2SATMA1?

The absolute maximum V_GS is ±20 V per datasheet Table 2. Operation beyond ±16 V risks irreversible gate oxide damage. For reliable 3.3 V or 5 V logic-level drive, no external gate clamp is required, but transient suppression (e.g., 12 V Zener) is recommended in noisy automotive environments.

Can IPD047N03LF2SATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (shown in Diagram 6) enables inherent current sharing. To ensure balanced operation, match gate drive loop inductance and use Kelvin source connections. Derate total current by 15% versus single-device rating due to thermal coupling effects.

Is the drain tab electrically isolated from the PCB copper pour?

No-the drain tab is internally connected to Pin 2 and must be soldered directly to a dedicated, non-isolated copper pour tied to the system drain net. This pour serves both thermal conduction and electrical connection; isolation would violate the device's thermal design requirements and cause overheating.

Does IPD047N03LF2SATMA1 support 3.3 V microcontroller direct drive without a gate driver?

Yes-its V_GS(th) range (1.35–2.35 V) and low Q_g (17 nC) allow full enhancement with 3.3 V GPIOs in low-frequency (<10 kHz), low-duty-cycle applications. For >50 kHz or high-current switching, a dedicated gate driver is required to achieve fast, low-loss transitions.

IPD047N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD047N03LF2SATMA1 FAQ

1.How can I place an order for IPD047N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD047N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD047N03LF2SATMA1 reliable?

The price and inventory of IPD047N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD047N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD047N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD047N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD047N03LF2SATMA1?

IPD047N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD047N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD047N03LF2SATMA1?

For technical support, including IPD047N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD047N03LF2SATMA1 requirements.

6.How does Aetrix verify that IPD047N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD047N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD047N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD047N03LF2SATMA1?

All IPD047N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD047N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD047N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD047N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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