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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD06N03LAG

Name: IPD06N03LAG
Brand: Infineon Technologies
SKU: IPD06N03LAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD06N03LAG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD06N03LAG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:25,570

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Product details

Overview

IPD06N03LAG from Infineon Technologies is an N-channel logic-level MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.7 mΩ max R_DS(on) (SMD version). It features 175 °C maximum junction temperature, low gate charge (Q_g = 17–22 nC), and is qualified per JEDEC standards for high-frequency DC/DC converters.

For engineers reviewing the IPD06N03LAG datasheet, IPD06N03LAG pinout, IPD06N03LAG application, or IPD06N03LAG equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 1.8 K/W), avalanche energy (E_AS = 225 mJ), and diode reverse recovery charge (Q_rr = 10 nC).

Technical Context

This MOSFET employs a trench-based OptiMOS®2 process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency synchronous rectification and switching in compact power stages. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V microcontroller outputs.

Thermal design is supported by a low junction-to-case resistance (1.8 K/W), validated on FR4 PCB with 6 cm² copper area, and operation up to 175 °C enables use in thermally constrained environments such as server VRMs and automotive body control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input rail systems and 5 V logic-level gate drive
R_DS(on) max	5.7 mΩ (SMD version @ V_GS = 10 V, I_D = 30 A) - Enables <1.5 W conduction loss at 50 A
I_D continuous	50 A @ T_C = 25 °C - Limited by bondwire; chip capability exceeds 94 A with R_thJC = 1.8 K/W
Q_g	17–22 nC - Low total gate charge reduces driver power and switching losses in >500 kHz converters
E_AS	225 mJ (I_D = 45 A, R_GS = 25 Ω) - Robust single-pulse avalanche capability for inductive load switching
T_j max	175 °C - Extended temperature rating supports under-hood and high-power-density applications
Q_rr	10 nC (@ V_R = 15 V, dI_F/dt = 400 A/µs) - Low reverse recovery charge minimizes shoot-through risk in synchronous buck topologies

Pinout & Package

IPD06N03LAG uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level input terminal; requires ≤20 V gate-source voltage; low C_iss (2093–2653 pF) eases high-speed drive
Pin 2 (D)	Drain	Main high-side or low-side switch node; electrically connected to exposed copper tab for thermal conduction to PCB
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to ground or power rail depending on topology

Key Features

Feature	Design Value
OptiMOS®2 trench technology	Delivers industry-leading R_DS(on) × Q_g FOM for high-frequency efficiency in 300–1000 kHz DC/DC stages
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for automotive and industrial reflow and stress conditions
175 °C operation	Enables derating-free use in sealed enclosures or near heat sources without thermal throttling
Low Q_rr and soft-recovery diode	Reduces EMI and cross-conduction losses in synchronous rectifiers and half-bridge configurations
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements without compromising solderability or long-term reliability

Applications

Server Voltage Regulator Module (VRM)

Automotive Body Control Module (BCM)

Use Scenario: High-current, high-efficiency 12 V → 1 V/30 A output stage in CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, switching at 600–800 kHz.

Use Value: 5.7 mΩ R_DS(on) and 17–22 nC Q_g minimize conduction + switching losses, improving system efficiency by ≥1.2% over prior-gen 8 mΩ parts.

Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors.

IC Role / Device Role / Timing Role: Low-side power switch controlled directly by 3.3 V MCU GPIO with integrated protection.

Use Value: Logic-level V_GS(th) (1.2–2.0 V) eliminates need for level-shifting; 175 °C rating ensures reliability in engine-bay proximity.

Industrial PLC I/O Module

USB-C PD Power Path Switch

Use Scenario: Solid-state relay replacement for 24 V DC digital output channels driving solenoids and valves.

IC Role / Device Role / Timing Role: Protected high-current switch with fast turn-off (t_f = 4.6–6.9 ns) and robust avalanche handling.

Use Value: 225 mJ E_AS withstands inductive kickback without snubbers; 50 A rating supports multi-channel parallelization.

Use Scenario: 20 V/5 A bidirectional power path switch in USB-C PD 3.0 sink applications.

IC Role / Device Role / Timing Role: Reverse-blocking, low-R_DS(on) pass FET with fast gate control for dynamic load insertion.

Use Value: 25 V V_DS margin accommodates 20 V PD bus transients; low Q_gd (4.6–6.9 nC) enables clean transition during CC logic handshaking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; lower current rating (4.3 A); SOT-23 package	Targeted at low-power signal switching, not high-current power conversion	Use only for sub-5 A loads where board space is critical and thermal budget permits higher R_DS(on)
STL130N4LF6AG	R_DS(on) = 3.1 mΩ @ 10 V; 40 V rating; TO-263 package; higher Q_g (42 nC)	Better conduction loss but slower switching; suited for <300 kHz applications with higher voltage margin	Select when 40 V blocking is required and switching frequency is below 300 kHz to avoid excessive driver loss

Compared with IRLML6344TRPBF and STL130N4LF6AG, IPD06N03LAG uniquely balances 25 V rating, 5.7 mΩ R_DS(on) at 4.5 V, and 17–22 nC Q_g-making it optimal for 12 V input, >500 kHz synchronous buck converters where both efficiency and layout density matter.

Availability

IPD06N03LAG is available at Aetrix Electronics and suitable for server VRMs, automotive BCMs, industrial PLC I/O modules, and USB-C PD power path designs requiring stable component supply across multi-year production cycles.

Supply support for IPD06N03LAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IPD06N03LAG belongs to the OptiMOS®2 family-designed specifically for high-frequency, high-efficiency DC/DC conversion in computing, automotive, and industrial power supplies where low R_DS(on) × Q_g is critical.

FAQ

Is IPD06N03LAG suitable for synchronous rectification in a 600 kHz buck converter?

Yes. With R_DS(on) = 5.7 mΩ (SMD) and Q_g = 17–22 nC, it delivers low conduction loss and fast, driver-efficient switching at 600 kHz. Its 175 °C rating and 225 mJ avalanche energy further support reliable operation under transient overload in VRM applications.

What is the recommended PCB layout for thermal performance?

Mount IPD06N03LAG on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² of 70 µm-thick copper connected to the drain tab. Use multiple thermal vias under the tab to inner-layer ground planes. Maintain ≥2 mm clearance from adjacent components to avoid localized hot spots.

Does IPD06N03LAG have integrated gate protection?

No. It lacks built-in gate Zener or series resistance. External gate resistor (2.7 Ω typical) and 12–15 V gate clamp (e.g., 12 V TVS) are recommended to limit dv/dt-induced ringing and prevent V_GS overshoot beyond ±20 V absolute maximum rating.

Can IPD06N03LAG replace IPD05N03LA in existing designs?

Yes, with verification. Both share PG-TO252-3-11 package and 25 V rating, but IPD06N03LAG has lower R_DS(on) (5.7 vs. 6.7 mΩ) and higher I_D (50 vs. 45 A). Thermal and gate drive margins should be rechecked, especially if operating near original limits.

IPD06N03LAG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD06N03LAG FAQ

1.How can I place an order for IPD06N03LAG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD06N03LAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD06N03LAG reliable?

The price and inventory of IPD06N03LAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD06N03LAG is usually 5 days.

3.What payment methods are accepted for IPD06N03LAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD06N03LAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD06N03LAG?

IPD06N03LAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD06N03LAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD06N03LAG?

For technical support, including IPD06N03LAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD06N03LAG requirements.

6.How does Aetrix verify that IPD06N03LAG is sourced from the original manufacturer or authorized distributors?

All IPD06N03LAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD06N03LAG meets industry standards.

7.What is the process for return or replacement of IPD06N03LAG?

All IPD06N03LAG units undergo pre-shipment inspection (PSI). If there is an issue with IPD06N03LAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD06N03LAG part is unused and in its original packaging.

Return procedure for IPD06N03LAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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