Infineon Technologies IPD100N04S4L02ATMA1

Overview

IPD100N04S4L02ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET designed for high-current, low-voltage switching in automotive and industrial power stages. It features a 40 V V_DS, 2.0 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and 100% single-pulse avalanche tested to 440 mJ. It is used in 12 V automotive DC-DC converters and motor control H-bridges.

For engineers reviewing the IPD100N04S4L02ATMA1 datasheet, IPD100N04S4L02ATMA1 pinout, IPD100N04S4L02ATMA1 application, or IPD100N04S4L02ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness, gate charge profile for PWM efficiency, and TO-252-3 package thermal performance in constrained PCB layouts.

Technical Context

This MOSFET employs Infineon's trench-based OptiMOS™-T2 process optimized for low conduction and switching losses in 12 V systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity. The device integrates a fast-recovery body diode with t_rr = 53 ns and Q_rr = 65 nC, supporting synchronous rectification and freewheeling in hard-switched topologies.

Thermal design is enabled by a specified R_thJC of 1.0 K/W and validated operation up to 175 °C junction temperature. Dynamic parameters-including C_iss = 9430 pF typ., Q_g = 118 nC max, and V_plateau = 5.8 V-support precise gate driver sizing for <100 ns total switching transitions at 100 A load current.

Key Specifications

Pinout & Package

IPD100N04S4L02ATMA1 is housed in PG-TO252-3-313 (DPAK), a surface-mount package with exposed drain pad for low thermal resistance (R_thJC = 1.0 K/W). The package complies with MSL1 rating for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB100N04S4-02, the IPD100N04S4L02ATMA1 trades 0.3 K/W higher R_thJC for 80% smaller footprint and 95% lower weight-critical for space-constrained automotive modules. Versus STL110N4LF6AG, it provides guaranteed automotive reliability and tighter V_GS(th) distribution at the cost of slightly higher gate charge.

Availability

IPD100N04S4L02ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering systems, and industrial motor control requiring stable component supply across multi-year production cycles.

Supply support for IPD100N04S4L02ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power stages-including DC-DC converters, motor drivers, and lighting systems-where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPD100N04S4L02ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this rating risks permanent gate oxide damage. For reliable 12 V system designs, a gate drive clamp at 12–15 V is recommended to avoid overshoot during fast switching while maintaining sufficient overdrive above the 4.0 V V_GS(th) max.

Does IPD100N04S4L02ATMA1 require a gate resistor, and what value is typical?

Yes-a series gate resistor is required to dampen ringing and control dV/dt. With Q_g = 118 nC and target t_r ≈ 15 ns, a 3.5 Ω resistor is typical per the datasheet test condition. Values between 2.2 Ω and 5.6 Ω balance switching speed, EMI, and driver dissipation in 100–500 kHz applications.

Can IPD100N04S4L02ATMA1 be paralleled with identical units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherent current sharing. Layout symmetry, matched gate drive paths, and shared source inductance are critical; derating total current by 15% is advised for thermal margin in continuous 100+ A operation.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is characterized with t_rr = 53 ns and Q_rr = 65 nC at T_j = 25 °C, making it viable for synchronous rectification in 100–300 kHz buck converters. However, its softness factor is not specified, so hard commutation may require careful dead-time tuning to avoid cross-conduction.