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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N06S223ATMA2

Name: IPD30N06S223ATMA2
Brand: Infineon Technologies
SKU: IPD30N06S223ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N06S223ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N06S223ATMA2.pdf

Description:: MOSFET N-CH 55V 30A TO252-31

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Product details

Overview

IPD30N06S223ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and ultra-low 23 mΩ max R_DS(on) at V_GS = 10 V and I_D = 21 A. It is AEC-Q101 qualified for automotive use, operates up to 175 °C, and features 100% avalanche testing and a lead-free PG-TO252-3-11 package.

For engineers reviewing the IPD30N06S223ATMA2 datasheet, IPD30N06S223ATMA2 pinout, IPD30N06S223ATMA2 application, or IPD30N06S223ATMA2 equivalent, key selection criteria include its 1.5 K/W junction-to-case thermal resistance, 150 mJ single-pulse avalanche energy, integrated body diode with 39 ns t_rr, and suitability for high-efficiency DC-DC converters, motor control, and automotive load switching.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.4 V gate plateau voltage supports stable Miller region control during turn-on/turn-off transitions.

The device integrates a monolithic body diode with 0.9–1.3 V forward voltage at 30 A and exhibits 104 pF reverse transfer capacitance (C_rss) and 283 pF output capacitance (C_oss) at V_DS = 25 V, enabling predictable snubber design and reduced switching losses in 12 V and 24 V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 42 V automotive systems and 36 V industrial rails.
R_DS(on) max	23 mΩ at V_GS = 10 V, I_D = 21 A - Enables ≤0.7 W conduction loss at 30 A, reducing heatsink requirements.
I_D cont	30 A at T_C = 25 °C - Sustains full-rated current with minimal derating when mounted on ≥6 cm² PCB copper area.
E_AS	150 mJ - Withstands single-pulse inductive energy without failure in motor drive or solenoid switching.
t_rr	39 ns - Limits commutation loss and diode reverse recovery overshoot in synchronous rectification.
R_thJC	1.5 K/W - Allows direct thermal path to heatsink; enables >40 W power dissipation before junction exceeds 175 °C.
Q_g	25–32 nC - Determines gate driver current requirement (~1.6 A peak for 20 ns rise time with 12 Ω gate resistor).

Pinout & Package

IPD30N06S223ATMA2 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; 5.4 V plateau ensures stable Miller inversion timing.
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed copper tab for low-inductance, high-current return path.
Pin 3 (S)	Source	Reference node for gate drive; tied to power ground in low-side configurations; defines V_GS control loop.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood applications including engine control, HVAC actuators, and lighting modules.
100% unclamped inductive switching (UIS) tested	Guarantees ruggedness against inductive kickback in relay/motor drive circuits without external snubbers.
MSL1 rating (260 °C peak reflow)	Enables standard lead-free PCB assembly without moisture sensitivity concerns or baking requirements.
Integrated body diode with low Q_rr	48 nC reverse recovery charge minimizes cross-conduction loss in half-bridge synchronous operation.
Thermal stability to 175 °C	Supports operation in high-ambient environments such as transmission control units and battery disconnect switches.

Applications

Automotive Body Control Module (BCM)

12 V DC-DC Buck Converter

Use Scenario: Switching power distribution to door locks, window lifts, and interior lighting in modern BCMs.

IC Role / Device Role / Timing Role: High-side load switch controlling 30 A peak loads with PWM dimming capability.

Use Value: 23 mΩ R_DS(on) reduces resistive heating by >40% vs. legacy 40 mΩ devices, extending PCB lifetime at 85 °C ambient.

Use Scenario: Primary synchronous rectifier in 12 V input, 5 V/20 A output buck converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side power switch operating at 300 kHz with 39 ns diode t_rr minimizing dead-time loss.

Use Value: 150 mJ E_AS withstands transient overloads during cold-crank events without latch-up or degradation.

Electric Power Steering (EPS) Motor Driver

Industrial 24 V Solenoid Driver

Use Scenario: Half-bridge leg in 3-phase inverter driving 150 W EPS assist motor.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with 23 ns rise time and 18 ns fall time enabling <100 ns dead time.

Use Value: 1.5 K/W R_thJC allows direct mounting to aluminum heatsink, maintaining T_j < 150 °C at 25 A RMS current.

Use Scenario: High-reliability on/off control of 24 V hydraulic solenoids in factory automation valves.

IC Role / Device Role / Timing Role: Single-ended switch with integrated avalanche capability absorbing L·di/dt energy during de-energization.

Use Value: 100% UIS tested to 150 mJ eliminates need for external TVS or freewheeling diode in compact valve driver PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL30DN6LF7AG	Same V_DS (60 V), higher R_DS(on) (28 mΩ), lower Q_g (22 nC), DFN5x6 package	Lower thermal resistance (R_thJC = 1.2 K/W) but smaller footprint limits copper area for heat spreading	Prefer for space-constrained, air-cooled designs where gate drive current is limited.
IRF3710PBF	Higher V_DS (100 V), much higher R_DS(on) (54 mΩ), TO-220 package, no AEC-Q101	Not automotive-qualified; suitable only for non-safety-critical industrial 24 V systems	Select only if 100 V blocking is required and thermal budget permits larger heatsink.

Compared with STL30DN6LF7AG and IRF3710PBF, IPD30N06S223ATMA2 delivers optimal balance of automotive qualification, low R_DS(on), and proven avalanche ruggedness-making it preferred for safety-critical 12–24 V load switching where reliability and thermal margin are prioritized over minimal gate charge.

Availability

IPD30N06S223ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering motor drivers, and industrial 24 V solenoid drivers requiring stable component supply across multi-year production cycles.

Supply support for IPD30N06S223ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), robust avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for operation across –55 °C to +175 °C. Derating curves in the datasheet show that at T_C = 100 °C, continuous drain current remains 30 A with V_GS ≥ 10 V, confirming sustained performance under high-ambient conditions typical in engine compartments.

Is a gate resistor required, and what value is recommended for 300 kHz switching?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 300 kHz operation with 12 V gate drive, a 10 Ω resistor provides ~2.5 A peak gate current and achieves ~20 ns rise/fall times per the 25–32 nC Q_g spec, balancing switching speed and EMI. Lower values increase shoot-through risk; higher values raise switching losses.

Does this MOSFET require a separate freewheeling diode in inductive load applications?

No-the integrated body diode is rated for 30 A continuous and 120 A pulsed forward current, with 39 ns reverse recovery time and 48 nC Q_rr. It is fully characterized for use in flyback, buck, and half-bridge topologies without external diodes, provided layout minimizes source inductance to avoid voltage overshoot during recovery.

How does the MSL1 rating impact PCB assembly process planning?

MSL1 means the device may be exposed to peak reflow temperatures up to 260 °C without preconditioning or baking, aligning with standard lead-free solder profiles. This eliminates moisture sensitivity handling steps, reduces floor-life tracking overhead, and supports direct placement into high-volume SMT lines using standard DPAK pick-and-place and reflow equipment.

IPD30N06S223ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 901 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N06S223ATMA2 FAQ

1.How can I place an order for IPD30N06S223ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N06S223ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N06S223ATMA2 reliable?

The price and inventory of IPD30N06S223ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N06S223ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD30N06S223ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N06S223ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N06S223ATMA2?

IPD30N06S223ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N06S223ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N06S223ATMA2?

For technical support, including IPD30N06S223ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N06S223ATMA2 requirements.

6.How does Aetrix verify that IPD30N06S223ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD30N06S223ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N06S223ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD30N06S223ATMA2?

All IPD30N06S223ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N06S223ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N06S223ATMA2 part is unused and in its original packaging.

Return procedure for IPD30N06S223ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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