Infineon Technologies IPD30N06S2L23ATMA1

Overview

IPD30N06S2L23ATMA1 from Infineon Technologies is an N-channel logic-level OptiMOS™ power MOSFET in PG-TO252-3-11 (DPAK) package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and ultra-low 23 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified for automotive applications and features 100% avalanche testing, 175 °C maximum junction temperature, and green (lead-free) packaging.

For engineers reviewing the IPD30N06S2L23ATMA1 datasheet, IPD30N06S2L23ATMA1 pinout, IPD30N06S2L23ATMA1 application, or IPD30N06S2L23ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (20.0–30 mΩ), avalanche ruggedness (E_AS = 150 mJ), thermal resistance (R_thJC = 1.5 K/W), and automotive-grade reliability under high-temperature operation.

Technical Context

This device employs a trench-based silicon process optimized for low conduction loss and fast switching in DC-DC converters and motor control stages. Its gate threshold voltage range (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

Dynamic parameters-including C_iss = 1091 pF, C_oss = 310 pF, and Q_g = 33–42 nC-support efficient operation in synchronous buck topologies up to several hundred kHz. The integrated body diode exhibits t_rr = 47 ns and Q_rr = 45 nC under specified conditions, enabling moderate-frequency freewheeling with controlled reverse recovery.

Key Specifications

Pinout & Package

IPD30N06S2L23ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB034N06L3G and STL120N4LF6AG, IPD30N06S2L23ATMA1 offers optimal balance of logic-level drivability, DPAK thermal performance, and automotive qualification-making it preferred for space-constrained, high-reliability 24–48 V automotive and industrial switching where gate drive simplicity and board-level thermal management are critical.

Availability

IPD30N06S2L23ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, 48 V DC-DC conversion, and server OR-ing applications requiring stable component supply across multi-year production cycles.

Supply support for IPD30N06S2L23ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems where low gate drive voltage and thermal robustness are essential.

FAQ

Is IPD30N06S2L23ATMA1 suitable for high-side switching with bootstrap gate drive?

Yes. Its logic-level threshold (1.2–2.0 V) and low Q_g (33–42 nC) make it compatible with standard bootstrap gate drivers in half-bridge configurations. However, ensure V_GS remains ≥ 4.5 V during conduction to maintain R_DS(on) ≤ 30 mΩ, and verify bootstrap capacitor sizing for required duty cycle and switching frequency.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 30 A at both T_C = 25 °C and T_C = 100 °C under V_GS = 10 V, limited by bondwire capacity-not thermal limits. At T_C = 100 °C, junction temperature remains within 175 °C rating only if R_thJC = 1.5 K/W is maintained and power dissipation stays ≤ 50 W.

Does the body diode support synchronous rectification in buck converters?

Yes. With t_rr = 47 ns and Q_rr = 45 nC at I_F = 30 A, the body diode enables synchronous rectification up to ~200 kHz. For best efficiency, pair with a controller that provides precise dead-time control to avoid shoot-through while minimizing reverse recovery losses.

How does the MSL1 rating impact PCB assembly?

MSL1 classification means the device can withstand peak reflow temperatures up to 260 °C without moisture-induced damage, eliminating bake-out requirements before SMT assembly. This simplifies manufacturing flow and supports standard lead-free reflow profiles used for automotive-grade PCBs.