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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N08S222ATMA1

Name: IPD30N08S222ATMA1
Brand: Infineon Technologies
SKU: IPD30N08S222ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N08S222ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N08S222ATMA1.pdf

Description:: MOSFET N-CH 75V 30A TO252-3

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Product details

Overview

IPD30N08S222ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO252-3-11 package, rated for 75 V V_DS, 30 A continuous drain current at T_C = 100 °C, and ultra-low 21.5 mΩ R_DS(on) max. It serves as a high-efficiency main switch in 12 V automotive DC-DC converters and motor control stages.

For engineers reviewing the IPD30N08S222ATMA1 datasheet, IPD30N08S222ATMA1 pinout, IPD30N08S222ATMA1 application, or IPD30N08S222ATMA1 equivalent, key selection criteria include avalanche energy (240 mJ), thermal resistance (1.1 K/W junction-to-case), gate charge profile (Q_g = 44–57 nC), and AEC-Q101 qualification for under-hood deployment.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 17.4–21.5 mΩ R_DS(on) at V_GS = 10 V enables high-current operation with minimal I²R heating in compact PCB layouts.

The MOSFET integrates a robust body diode with 130 nC Q_rr and 57 ns t_rr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Gate threshold voltage (2.1–4.0 V) ensures stable turn-on across temperature and supply variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - supports 12 V automotive systems with margin against load-dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on) max	21.5 mΩ at V_GS = 10 V, I_D = 50 A - enables ≤0.65 W conduction loss at 30 A, reducing heatsink requirements.
I_D continuous	30 A at T_C = 100 °C - sustains full-rated current in engine compartment environments without derating.
E_AS	240 mJ single-pulse avalanche energy - withstands inductive switching stress in motor drive and solenoid control.
Q_g	44–57 nC - determines gate driver power and switching speed; compatible with standard 1-A peak drivers.
R_thJC	1.1 K/W - allows direct thermal coupling to copper pour or heatsink for efficient power dissipation.
V_GS(th)	2.1–4.0 V - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive in microcontroller-based systems.

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Three terminals: Drain (pins 1 & 2), Source (pin 3), Gate (pin 3 tab).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2)	Main power path collector	Connected to high-side bus or inductive load; electrically and thermally tied to large copper area on PCB.
Source (Pin 3)	Reference node for gate drive	Serves as return path for load current and reference for V_GS; requires low-inductance routing to minimize switching noise.
Gate (Tab on Pin 3 side)	Control input	High-impedance terminal requiring RC snubber or gate resistor (7.5 Ω typical) to damp ringing during fast transitions.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use up to 175 °C junction temperature and MSL1 reflow compatibility.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test to guarantee ruggedness in inductive switching applications.
Ultra-low R_DS(on)	21.5 mΩ max reduces conduction losses by >35% vs. legacy 40 mΩ DPAK MOSFETs at same current density.
Green package	Lead-free, halogen-free construction compliant with RoHS and ELV directives for global vehicle production.
Integrated body diode	Optimized for low Q_rr (130 nC) and soft recovery, minimizing voltage overshoot during commutation.

Applications

Automotive Body Control Module (BCM)

12 V DC-DC Buck Converter

Use Scenario: Driving high-current loads such as headlight relays, window lift motors, and HVAC actuators in centralized BCM units.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V distribution with PWM dimming and short-circuit protection.

Use Value: 30 A continuous rating and 240 mJ avalanche capability prevent failure during motor stall or relay coil de-energization.

Use Scenario: Main synchronous rectifier switch in 12 V → 5 V/3.3 V step-down converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Low-loss output stage switch operating at 200–500 kHz with tight duty-cycle control.

Use Value: 21.5 mΩ R_DS(on) and 57 nC Q_rr reduce total power loss by ≥1.2 W vs. comparable 30 mΩ devices at 20 A load.

Electric Power Steering (EPS) Motor Driver

Start-Stop System Solenoid Control

Use Scenario: Half-bridge high-side switch in three-phase EPS inverter driving brushless DC assist motor.

IC Role / Device Role / Timing Role: Fast-switching power stage component handling 30 A peak phase current with <30 ns rise time.

Use Value: 1.1 K/W R_thJC and 175 °C T_j rating enable sustained operation during repeated torque assist events without thermal throttling.

Use Scenario: High-reliability solenoid actuator driver in 12 V start-stop battery management circuits.

IC Role / Device Role / Timing Role: Inrush-limited, high-energy switching element engaging starter solenoid during engine cranking.

Use Value: 120 A pulsed drain current and 240 mJ E_AS tolerate repeated 50 ms cranking pulses without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL30DN6LF7AG	60 V V_DS, 30 A, 22 mΩ R_DS(on), same DPAK package, AEC-Q101 qualified	Limited to 60 V systems; lower avalanche energy (190 mJ)	Preferred where lower V_DS margin suffices and cost sensitivity outweighs 75 V transient tolerance.
IRF3709ZCPBF	30 V V_DS, 30 A, 11 mΩ R_DS(on), TO-220AB package, no AEC-Q101	Not automotive-qualified; higher R_thJA (62 K/W); unsuitable for under-hood use	Only suitable for non-automotive industrial 24 V supplies with ample heatsinking and ambient cooling.

Compared with STL30DN6LF7AG and IRF3709ZCPBF, IPD30N08S222ATMA1 delivers superior 75 V system margin, higher avalanche ruggedness, and guaranteed automotive reliability-making it the only choice for ISO 16750-compliant 12 V power distribution.

Availability

IPD30N08S222ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering inverters, and start-stop solenoid drivers requiring stable component supply across extended product lifecycles.

Supply support for IPD30N08S222ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-temperature automotive power switching with minimized conduction and switching losses.

FAQ

Is IPD30N08S222ATMA1 pin-compatible with earlier IPD30N08S2 variants?

Yes-IPD30N08S222ATMA1 uses the identical PG-TO252-3-11 package and pinout as IPD30N08S2-22 and IPD30N08S2-22T, with identical drain-source-gate terminal assignment and thermal pad layout. No PCB redesign is required for drop-in replacement.

What is the maximum recommended gate resistor value for 200 kHz switching?

A 7.5 Ω gate resistor is specified in the datasheet for 200–500 kHz operation with V_DD = 60 V and I_D = 30 A. Increasing beyond 10 Ω significantly extends t_r/t_f, raising switching losses; values below 5 Ω risk gate oscillation without proper layout.

Does this MOSFET require external Schottky clamping in inductive loads?

No-its integrated body diode is optimized for low Q_rr (130 nC) and soft recovery, eliminating need for external clamps in typical 12 V automotive inductive loads. External Schottky diodes may be added only for ultra-fast recovery demands exceeding 100 A/µs di/dt.

Can IPD30N08S222ATMA1 operate reliably at 175 °C junction temperature continuously?

Yes-the device is rated for continuous operation up to T_j = 175 °C per AEC-Q101, with validated R_DS(on) drift (<25% increase) and gate threshold stability over temperature. Derating of I_D is not required if case temperature remains ≤100 °C with adequate thermal design.

IPD30N08S222ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 21.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N08S222ATMA1 FAQ

1.How can I place an order for IPD30N08S222ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N08S222ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N08S222ATMA1 reliable?

The price and inventory of IPD30N08S222ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N08S222ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD30N08S222ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N08S222ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N08S222ATMA1?

IPD30N08S222ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N08S222ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N08S222ATMA1?

For technical support, including IPD30N08S222ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N08S222ATMA1 requirements.

6.How does Aetrix verify that IPD30N08S222ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD30N08S222ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N08S222ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD30N08S222ATMA1?

All IPD30N08S222ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N08S222ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N08S222ATMA1 part is unused and in its original packaging.

Return procedure for IPD30N08S222ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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