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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N10S3L34ATMA2

Name: IPD30N10S3L34ATMA2
Brand: Infineon Technologies
SKU: IPD30N10S3L34ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N10S3L34ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N10S3L34ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPD30N10S3L34ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V V_DS, 30 A continuous drain current at T_C = 25°C, and 31 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (138 mJ single-pulse E_AS) and operates up to 175°C junction temperature, targeting automotive DC-DC converters and motor control stages.

For engineers reviewing the IPD30N10S3L34ATMA2 datasheet, IPD30N10S3L34ATMA2 pinout, IPD30N10S3L34ATMA2 application, or IPD30N10S3L34ATMA2 equivalent, key selection criteria include its 100 V blocking capability, low gate charge (Q_g = 24–31 nC), integrated body diode with 72 ns t_rr, and MSL1 reflow compatibility for high-reliability automotive PCB assembly.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) enables reliable turn-on with standard logic-level drivers, while its 3.7 V gate plateau voltage supports stable Miller region control during hard-switching.

The MOSFET integrates a fast, soft-recovery body diode (Q_rr = 150 nC, t_rr = 72 ns) and exhibits low output capacitance (C_oss = 380–494 pF), enabling efficient operation in synchronous rectification and high-frequency buck converters up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 24 V automotive battery systems with 4× safety margin against load-dump transients.
R_DS(on) max	31 mΩ at V_GS = 10 V - Enables ≤0.93 W conduction loss at 30 A, reducing heatsink requirements.
Q_g	24–31 nC - Low gate drive energy allows use with low-power gate drivers and reduces switching loss in PWM stages.
E_AS	138 mJ (I_D = 15 A) - Withstands repetitive inductive switching stress without derating in motor drive H-bridges.
t_rr	72 ns - Limits diode reverse recovery loss and EMI generation in synchronous buck topologies.
T_j max	+175 °C - Rated for under-hood environments including engine control units and transmission modules.
R_thJC	2.6 K/W - Enables direct thermal coupling to PCB copper pour or heatsink for compact thermal design.

Pinout & Package

IPD30N10S3L34ATMA2 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. The package complies with MSL1 rating and supports peak reflow up to 260°C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side return path; connects to ground or low-side switch node in half-bridge configurations.
Pin 2 (Gate)	Control input	Receives PWM signal; requires <20 V absolute max rating and low-impedance driver for fast switching.
Pin 3 (Drain)	High-side power node	Exposed copper pad - must be soldered to ≥6 cm² PCB copper area for thermal management and current conduction.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine management, ADAS power supplies, and EPS control modules.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test ensuring robustness in inductive load switching.
Optimized body diode	Soft reverse recovery (Q_rr = 150 nC) minimizes voltage overshoot and ringing during freewheeling in DC-DC converters.
Low R_DS(on) × Q_g figure of merit	~0.96 Ω·nC - balances conduction and switching losses for high-efficiency 100–500 kHz power stages.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Drivers

Use Scenario: Step-down conversion from 48 V or 12 V battery to 3.3 V/5 V MCU rails in vehicle domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in buck converter topology operating at 300–500 kHz.

Use Value: 31 mΩ R_DS(on) and 72 ns t_rr reduce total power loss by ≥18% vs. legacy 40 mΩ devices at 25 A load.

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless DC motor in steering column actuator.

IC Role / Device Role / Timing Role: Low-side switch handling 30 A continuous phase current with 120 A pulsed capability.

Use Value: 138 mJ E_AS rating ensures safe operation during motor stall and regenerative braking events.

On-Board Charger (OBC) Auxiliary Supplies

Body Control Module (BCM) Load Switching

Use Scenario: Isolated auxiliary supply generating 12 V from 400 V HV bus for OBC control circuitry.

IC Role / Device Role / Timing Role: Primary-side active clamp switch in resonant LLC stage with zero-voltage switching.

Use Value: C_oss = 380–494 pF and low Q_gd/Q_gs ratio enable precise ZVS boundary control and reduced dead-time loss.

Use Scenario: High-current load switch controlling HVAC blower, headlight leveling, or seat heater circuits.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch with integrated diagnostics via V_GS(th) stability monitoring.

Use Value: 175°C T_j rating and AEC-Q101 qualification ensure long-term reliability in hot under-dash environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	R_DS(on) = 33 mΩ (typ), Q_g = 34 nC, no AEC-Q101 certification	Targeted at industrial motor drives; lacks automotive qualification and avalanche test documentation	Select only for non-automotive cost-sensitive designs where AEC-Q101 is not mandated.
IRF3205PBF	R_DS(on) = 45 mΩ (max), T_j max = 175°C, no AEC-Q101, obsolete per Infineon cross-reference	Legacy TO-220 part; higher conduction loss and larger footprint unsuitable for modern DPAK layouts	Not recommended for new designs; use only for legacy repair or backward-compatible replacements.

Compared with STL100N10F7 and IRF3205PBF, IPD30N10S3L34ATMA2 offers lower R_DS(on), tighter Q_g distribution, full AEC-Q101 compliance, and documented avalanche ruggedness-making it the preferred choice for production automotive power stages requiring long-term supply continuity and functional safety alignment.

Availability

IPD30N10S3L34ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and on-board charger auxiliary supplies requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPD30N10S3L34ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum gate-source voltage rating for IPD30N10S3L34ATMA2?

The absolute maximum gate-source voltage is ±20 V, with transient exposure to −5 V to −20 V permitted for up to 168 non-consecutive hours. Exceeding this range risks permanent gate oxide damage. Designers must ensure gate driver clamping or Zener protection when using bootstrap or high-side configurations with voltage spikes.

Does IPD30N10S3L34ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithically integrated body diode rated for 30 A continuous forward current and 120 A pulsed current. Key parameters include V_SD = 0.6–1.2 V at I_F = 30 A and T_j = 25°C, t_rr = 72 ns, and Q_rr = 150 nC-enabling use in synchronous rectification without external diodes in many automotive DC-DC designs.

How does the thermal resistance R_thJC of 2.6 K/W translate to practical PCB layout requirements?

R_thJC = 2.6 K/W assumes direct thermal contact between the exposed drain pad and ≥6 cm² of 70 µm thick copper on FR4 PCB, vertically mounted in still air. To achieve this, designers must use multiple thermal vias under the pad, connect to internal ground/power planes, and avoid solder mask over the copper area to maximize heat transfer to ambient.

Is IPD30N10S3L34ATMA2 suitable for use in a high-frequency resonant LLC converter primary switch?

No-it is not rated for primary-side high-voltage switching in LLC converters due to its 100 V V_DS rating and lack of specified dv/dt immunity. It is intended for secondary-side synchronous rectification or low-side switching in 12 V/24 V/48 V domains. For primary switches, Infineon recommends CoolMOS™ C7 or CE series devices rated for ≥600 V.

IPD30N10S3L34ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 29µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1976 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N10S3L34ATMA2 FAQ

1.How can I place an order for IPD30N10S3L34ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N10S3L34ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N10S3L34ATMA2 reliable?

The price and inventory of IPD30N10S3L34ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N10S3L34ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD30N10S3L34ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N10S3L34ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N10S3L34ATMA2?

IPD30N10S3L34ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N10S3L34ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N10S3L34ATMA2?

For technical support, including IPD30N10S3L34ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N10S3L34ATMA2 requirements.

6.How does Aetrix verify that IPD30N10S3L34ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD30N10S3L34ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N10S3L34ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD30N10S3L34ATMA2?

All IPD30N10S3L34ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N10S3L34ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N10S3L34ATMA2 part is unused and in its original packaging.

Return procedure for IPD30N10S3L34ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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