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Infineon Technologies IPD50N06S4L08ATMA1

Name: IPD50N06S4L08ATMA1
Brand: Infineon Technologies
SKU: IPD50N06S4L08ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N06S4L08ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N06S4L08ATMA1.pdf

Description:: MOSFET N-CH 60V 50A TO252-3

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Product details

Overview

IPD50N06S4L08ATMA1 from Infineon Technologies is a 60 V, 50 A, logic-level N-channel Trench MOSFET in PG-TO252-3 package with R_DS(on) = 8.1 mΩ (max) at V_GS = 10 V and 9.5 mΩ (max) at V_GS = 4.5 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IPD50N06S4L08ATMA1 datasheet, IPD50N06S4L08ATMA1 pinout, IPD50N06S4L08ATMA1 application, or IPD50N06S4L08ATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, avalanche-rated ruggedness, and TO252 footprint compatibility with thermal pad soldering requirements.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 4 technology, delivering enhanced switching performance with reduced gate charge (Q_g = 32 nC typ) and output charge (Q_oss = 120 nC typ). Its 100% avalanche-tested construction supports unclamped inductive switching up to E_AS = 270 mJ at T_j = 25 °C.

The device features a Kelvin source configuration for improved gate drive stability and reduced common-source inductance, enabling clean turn-on/turn-off waveforms in synchronous buck topologies operating above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage for 24 V and 48 V bus systems
I_D (T_C = 25 °C)	50 A - continuous drain current with heatsink, enabling 100 W+ power stages
R_DS(on) @ V_GS = 4.5 V	9.5 mΩ max - ensures low conduction loss with 3.3 V/5 V logic-level gate drivers
Q_g	32 nC typ - reduces gate driver power loss and enables faster switching transitions
E_AS	270 mJ @ T_j = 25 °C - supports reliable operation under inductive load switching stress
Thermal Resistance R_thJC	1.4 K/W - enables efficient heat transfer from junction to case with standard PCB copper pour

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed thermal pad on drain side for enhanced PCB heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground plane; carries full load current return path
Pin 2 (Gate)	Control input	Receives logic-level PWM signal; requires <10 Ω series gate resistor for ringing suppression
Pin 3 (Drain)	High-current output node	Connected to input bus; ties directly to thermal pad for junction-to-PCB heat conduction

Key Features

Feature	Design Value
Logic-level gate drive	Full enhancement at V_GS = 4.5 V enables direct interface with microcontroller GPIOs without level-shifting
100% avalanche rated	Guaranteed E_AS = 270 mJ allows robust operation in flyback, buck-boost, and motor phase-leg circuits
Low Q_g/Q_oss ratio	Q_g/Q_oss ≈ 0.27 improves hard-switching efficiency and reduces voltage overshoot during turn-off
Enhanced thermal pad	Exposed drain pad occupies >75% of bottom footprint, supporting ≥40 W thermal dissipation with 2 oz Cu + 2 thermal vias

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge phase-leg in 24 V BLDC motor controllers for HVAC actuators and conveyor modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology, switching at 20–50 kHz with dead-time-controlled gate drive.

Use Value: 9.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35% vs. legacy 12 V gate MOSFETs, extending thermal margin at 5 A RMS load.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V intermediate bus converter for rack-mounted servers.

IC Role / Device Role / Timing Role: High-current, low-loss power switch in multiphase buck regulator with 300 kHz–1 MHz PWM frequency.

Use Value: 32 nC Q_g minimizes gate driver power consumption and enables use of cost-effective dual-channel drivers like IRS2007.

Automotive Body Control

Renewable Energy Inverters

Use Scenario: Load switch for 12 V battery-fed lighting and solenoid control in body electronics modules.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch with integrated reverse-polarity protection via external diode.

Use Value: Avalanche rating eliminates need for external TVS clamping in load-dump transient conditions per ISO 7637-2 Pulse 5a.

Use Scenario: DC link switch in micro-inverter half-bridge stage converting PV panel output (30–60 V) to AC grid.

IC Role / Device Role / Timing Role: Fast-switching, thermally robust power transistor handling bidirectional current during ZVS commutation.

Use Value: 1.4 K/W R_thJC sustains 45 A peak current at T_j ≤ 135 °C with minimal heatsink, reducing system size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 45 nC; no Kelvin source	Higher gate drive loss and reduced switching speed in high-frequency converters	Prefer for cost-sensitive, <200 kHz designs where gate drive simplicity outweighs efficiency gain
IRLZ44NPBF	R_DS(on) = 25 mΩ @ 4.5 V; E_AS not specified; TO-220 package	Larger footprint, lower current density, and untested avalanche capability limit use in compact, rugged designs	Acceptable only in low-power (<15 A), non-avalanche-critical linear regulators or lamp drivers

Compared with STP55NF06L and IRLZ44NPBF, IPD50N06S4L08ATMA1 delivers superior conduction efficiency at logic-level drive, verified avalanche ruggedness, and optimized thermal design for space-constrained industrial and automotive power stages.

Availability

IPD50N06S4L08ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IPD50N06S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to the OptiMOS™ 4 discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in 12–60 V industrial and automotive power conversion systems.

FAQ

What is the maximum pulsed drain current (I_DM) for IPD50N06S4L08ATMA1?

The maximum pulsed drain current is 200 A, specified at T_j = 25 °C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating supports short-duration overload events such as motor startup surges or inrush limiting in power supplies, provided PCB thermal design maintains junction temperature below 150 °C during pulses.

Does IPD50N06S4L08ATMA1 require a gate resistor, and what value is recommended?

A gate resistor between 4.7 Ω and 10 Ω is recommended to dampen ringing caused by parasitic inductance in the gate loop. Lower values (≤5 Ω) improve switching speed but increase EMI risk; higher values (≥8 Ω) reduce dV/dt stress and EMI at the cost of increased switching losses. Layout-dependent optimization is required for each application.

Can IPD50N06S4L08ATMA1 be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. For stable operation, match gate drive impedance, minimize layout asymmetry, and ensure identical thermal mounting across devices. Derating total current by 15% is advised for 2-device parallel setups with shared heatsinking.

Is the thermal pad electrically isolated, and how should it be connected on the PCB?

No, the thermal pad is internally connected to the drain terminal. It must be soldered to a large copper pour tied to the high-side DC bus net. Minimum 4×4 array of 0.3 mm vias to inner-layer ground/power planes is recommended to achieve ≤1.4 K/W effective R_thJA in standard 4-layer boards.

IPD50N06S4L08ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N06S4L08ATMA1 FAQ

1.How can I place an order for IPD50N06S4L08ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N06S4L08ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N06S4L08ATMA1 reliable?

The price and inventory of IPD50N06S4L08ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N06S4L08ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N06S4L08ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N06S4L08ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N06S4L08ATMA1?

IPD50N06S4L08ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N06S4L08ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N06S4L08ATMA1?

For technical support, including IPD50N06S4L08ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N06S4L08ATMA1 requirements.

6.How does Aetrix verify that IPD50N06S4L08ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N06S4L08ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N06S4L08ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N06S4L08ATMA1?

All IPD50N06S4L08ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N06S4L08ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N06S4L08ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N06S4L08ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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