Infineon Technologies IPD50N06S4L08ATMA2

Overview

IPD50N06S4L08ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 7.8 mΩ R_DS(on) at 10 V_GS, and 50 A continuous drain current at T_C = 25°C. It operates up to 175°C junction temperature and is 100% avalanche tested for automotive motor control and DC-DC converter primary-side switching.

For engineers reviewing the IPD50N06S4L08ATMA2 datasheet, IPD50N06S4L08ATMA2 pinout, IPD50N06S4L08ATMA2 application, or IPD50N06S4L08ATMA2 equivalent, key selection criteria include its 2.1 K/W R_thJC, 49–64 nC total gate charge, 6.3 mΩ typical R_DS(on) at 10 V_GS/50 A, integrated body diode with 33 ns t_rr, and MSL1 reflow compatibility up to 260°C.

Technical Context

This device implements a trench-gate, superjunction-free silicon MOSFET architecture optimized for low conduction and switching losses in 12 V and 24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive, while the 3680–4780 pF input capacitance and 40–80 pF reverse transfer capacitance support stable high-frequency PWM operation up to 500 kHz.

The integrated Schottky-like body diode delivers 0.6–1.3 V forward voltage at 50 A and exhibits controlled 32 nC reverse recovery charge, enabling efficient synchronous rectification and freewheeling in half-bridge topologies without external diode supplementation.

Key Specifications

Pinout & Package

PG-TO252-3-11 (D-Pak variant) with exposed drain pad for thermal dissipation. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL120N6F7AG and IRF540NPBF, IPD50N06S4L08ATMA2 offers optimal balance of automotive-grade ruggedness, 7.8 mΩ conduction loss, 2.1 K/W thermal resistance, and compact D-Pak footprint-making it preferred for space- and reliability-constrained automotive power stages.

Availability

IPD50N06S4L08ATMA2 is available at Aetrix Electronics and suitable for automotive motor control, 12 V/24 V DC-DC converters, and lighting driver designs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD50N06S4L08ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V and 24 V systems-including engine management, body electronics, and ADAS power supplies.

FAQ

What is the maximum allowable gate-source voltage for IPD50N06S4L08ATMA2?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement, with 4.5 V sufficient for partial conduction in logic-level applications. The gate threshold voltage range is 1.2–2.2 V at 35 µA drain current.

Does IPD50N06S4L08ATMA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. With 3.5 Ω gate resistor and 10 V drive, typical turn-on delay is 9 ns and rise time is 2 ns. For 5 V logic-level drive, 10–22 Ω is recommended to limit peak gate current while maintaining acceptable switching speed.

Can IPD50N06S4L08ATMA2 be used in high-side switching configurations?

Yes, but requires a gate driver capable of providing V_GS ≥ 10 V referenced to the source node. Its 175°C rating and 2.1 K/W R_thJC support high-side placement in compact power stages; however, source node voltage swing must be accounted for in level-shifting design.

Is the body diode suitable for continuous freewheeling in synchronous rectifier applications?

The integrated body diode supports 50 A continuous forward current and 200 A pulsed current, with 0.6–1.3 V V_SD at 50 A and 33 ns t_rr. While usable for freewheeling, its Q_rr of 32 nC makes it less efficient than discrete Schottky diodes in high-frequency (>200 kHz) synchronous rectification; best suited for medium-frequency PWM and inductive load commutation.