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Infineon Technologies IPD50R399CPATMA1

Part No.:
IPD50R399CPATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD50R399CPATMA1.pdf
Description:
LOW POWER_LEGACY
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,500

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Product details

Overview

IPD50R399CPATMA1 from Infineon Technologies is a 550 V, 4.9 A CoolMOS™ CP superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for hard- and soft-switching SMPS topologies with RDS(on) = 0.399 Ω (max), Qg = 17 nC (typ), and dv/dt ruggedness up to 400 V/ns. It delivers high peak current capability and industrial-grade reliability for lamp ballast PFC and LCD/PDP TV PWM stages.

For engineers reviewing the IPD50R399CPATMA1 datasheet, IPD50R399CPATMA1 pinout, IPD50R399CPATMA1 application, or IPD50R399CPATMA1 equivalent, key selection criteria include its 550 V VBR(DSS), 0.399 Ω RDS(on) at 150 °C, 215 mJ single-pulse avalanche energy, ultra-low gate charge, and TO252 thermal resistance of 1.5 K/W (junction-to-case).

Technical Context

This device implements a superjunction trench-gate structure enabling simultaneous low conduction loss (RDS(on) × Qg FoM = 6.8 Ω·nC) and high switching robustness. Its extreme dv/dt rating (400 V/ns) and 12.2 A peak reverse recovery current support fast, reliable operation in discontinuous conduction mode (DCM) PFC and resonant LLC converters.

The integrated body diode features trr = 260 ns and Qrr = 1.9 µC at Tj = 25 °C, with VSD = 0.9–1.2 V at IF = 4.9 A - enabling efficient freewheeling in half-bridge and synchronous rectification configurations without external diode supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VBR(DSS)550 V - Withstands DC link voltages up to 400 V in PFC and 380 V in offline SMPS with margin.
RDS(on) max0.399 Ω @ Tj = 25 °C - Enables <4.9 A continuous conduction with ≤2.4 W conduction loss at room temperature.
Qg typ17 nC - Reduces gate drive power and enables >100 kHz switching in compact flyback and LLC designs.
EAS215 mJ - Supports single-pulse avalanche survival under transient overvoltage events in unclamped inductive loads.
RthJC1.5 K/W - Allows 4.9 A operation at TC = 100 °C with ≤7.4 °C junction rise above case.
trr260 ns - Limits diode switching loss and EMI generation during hard commutation in bridge legs.
ID,pulse20 A - Sustains short-duration surge currents during startup or overload without bondwire failure.

Pinout & Package

IPD50R399CPATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 6.2 mm × 2.3 mm and supports reflow soldering up to 260 °C (10 s, 1.6 mm from case).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main power output terminalExposed copper pad - must be soldered to ≥6 cm² PCB copper area for thermal performance per datasheet Fig. 5.
SourceReference node for gate drive and current sensingLow-inductance connection critical for stable switching; ties directly to power ground plane.
GateControl input for channel modulationHigh-impedance node requiring <35.1 Ω external series resistance to damp ringing and limit dV/dt-induced turn-on.

Key Features

FeatureDesign Value
Lowest RDS(on) × Qg FoM6.8 Ω·nC - Delivers best-in-class efficiency trade-off for 500–600 V SMPS applications.
Extreme dv/dt ruggedness400 V/ns - Prevents false turn-on during high-slew-rate transients in half-bridge and phase-shifted topologies.
Industrial JEDEC qualificationQualified per JESD22-A108 - Ensures 15-year operational reliability in 85/85 storage and 1000-cycle temperature cycling.
Halogen-free & RoHSPb-free lead plating - Complies with EU RoHS Directive 2011/65/EU and IPC-1752A material declaration requirements.
Enhanced body diodetrr = 260 ns, Qrr = 1.9 µC - Reduces switching loss and voltage overshoot in freewheeling paths versus standard SJ-MOSFETs.

Applications

Lamp Ballast DCM PFCLCD TV Main SMPS

Use Scenario: Discontinuous conduction mode boost converter operating at 65–130 kHz in electronic ballasts for fluorescent lamps.

IC Role / Device Role / Timing Role: Primary switch handling 400 V DC link, delivering 4.9 A peak current with minimal conduction and switching loss.

Use Value: 0.399 Ω RDS(on) and 17 nC Qg enable >94% efficiency at full load while maintaining thermal margin on FR4 PCB.

Use Scenario: Quasi-resonant flyback converter powering main logic board and backlight in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: High-voltage primary-side switch with integrated fast-recovery body diode for synchronous rectification assist.

Use Value: 260 ns trr and 12.2 A Irrm suppress voltage spikes during ZVS transitions, reducing snubber losses and EMI filter size.

PDP TV PWM StageIndustrial AC-DC Adapter

Use Scenario: High-frequency PWM stage driving sustain and address electrodes in plasma display panels.

IC Role / Device Role / Timing Role: Fast-switching power switch in half-bridge configuration, operating with 400 V bus and 100 kHz+ frequency.

Use Value: 400 V/ns dv/dt rating prevents spurious turn-on during rapid bus voltage transitions, ensuring timing integrity.

Use Scenario: 150 W open-frame AC-DC adapter for industrial control modules requiring long-term reliability.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology, rated for continuous 100 °C case temperature.

Use Value: 1.5 K/W RthJC and 215 mJ EAS ensure safe operation under sustained overload and line surges per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06L60 V VBR(DSS), 55 A ID, TO-220 - Not voltage-compatible; unsuitable for 400 V DC link.Designed for low-voltage motor drives, not SMPS or PFC.Select only for ≤60 V systems requiring higher current; not a functional substitute.
IPP60R099C7650 V VBR(DSS), 0.099 Ω RDS(on), 63 nC Qg, TO-220 - Higher conduction loss margin but 3.7× higher gate charge.Better for high-power continuous conduction mode (CCM) PFC where switching loss is secondary.Prefer when system prioritizes RDS(on) over switching speed; requires stronger gate driver.

Compared with STP55NF06L and IPP60R099C7, IPD50R399CPATMA1 uniquely balances 550 V rating, ultra-low Qg, and industrial thermal robustness - making it optimal for space-constrained, high-frequency DCM PFC and TV SMPS where gate drive loss and dv/dt immunity are critical.

Availability

IPD50R399CPATMA1 is available at Aetrix Electronics and suitable for lamp ballast DCM PFC, LCD TV main SMPS, PDP TV PWM stages, and industrial AC-DC adapters requiring stable component supply across multi-year production cycles.

Supply support for IPD50R399CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS™ CP product line targets high-efficiency, high-reliability switched-mode power supplies - specifically engineered for DCM PFC, lighting ballasts, and consumer TV power stages where low gate charge and avalanche ruggedness are decisive.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD50R399CPATMA1 supports 6 A continuous drain current at TC = 100 °C, as specified in the "Maximum ratings" table on page 1 of the Rev. 2.3 datasheet. This value is derived from derating the 9 A rating at 25 °C using the thermal resistance RthJC = 1.5 K/W and maximum junction temperature of 150 °C.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the IPD50R399CPATMA1 has a gate threshold voltage VGS(th) of 2.5–3.5 V and is fully controllable with 0 V to +10 V gate drive. A negative gate voltage is not required; however, pulling the gate to –5 V improves noise immunity in high-dv/dt environments per application note AN2015-05.

Can it replace IPD50R399CP in existing designs without layout changes?

Yes - IPD50R399CPATMA1 is the tape-and-reel variant of IPD50R399CP in identical PG-TO252 package with same marking "5R399P", pinout, and electrical specifications. No PCB or schematic modifications are needed for drop-in replacement in automated assembly lines.

What is the recommended gate resistor value for 100 kHz operation?

A 35.1 Ω external gate resistor is specified in the datasheet (page 3, dynamic test conditions) to achieve optimal switching behavior at 100 kHz with VDD = 400 V and ID = 4.9 A. This value balances turn-on speed, ringing suppression, and gate driver power dissipation in typical SMPS layouts.

IPD50R399CPATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CP
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-313

IPD50R399CPATMA1 FAQ

1.How can I place an order for IPD50R399CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R399CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R399CPATMA1 reliable?

The price and inventory of IPD50R399CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R399CPATMA1 is usually 5 days.

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IPD50R399CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R399CPATMA1?

For technical support, including IPD50R399CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R399CPATMA1 requirements.

6.How does Aetrix verify that IPD50R399CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R399CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R399CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R399CPATMA1?

All IPD50R399CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R399CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R399CPATMA1 part is unused and in its original packaging.

Return procedure for IPD50R399CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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