Infineon Technologies IPD60R1K0PFD7SAUMA1

Overview

IPD60R1K0PFD7SAUMA1 from Infineon Technologies is a 600 V, 1.0 Ω R_DS(on) superjunction MOSFET in DPAK (PG-TO252-3) package with integrated fast body diode and ESD protection. It delivers 8.8 A pulsed drain current, 0.7 µJ E_oss at 400 V, and 1300 A/µs di_F/dt capability-optimized for ZVS topologies in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPD60R1K0PFD7SAUMA1 datasheet, IPD60R1K0PFD7SAUMA1 pinout, IPD60R1K0PFD7SAUMA1 application, or IPD60R1K0PFD7SAUMA1 equivalent, key selection criteria include its 6.0 nC total gate charge, 4.8 °C/W junction-to-case thermal resistance, 1000 mΩ max R_DS(on) at 150°C, and JEDEC-qualified ruggedness for consumer power supply designs.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure enabling low R_DS(on) × Q_g (0.84 Ω × 6.0 nC) and R_DS(on) × E_oss (0.84 Ω × 0.7 µJ) figures of merit. Its integrated fast-recovery body diode (t_rr = 44–66 ns, Q_rr = 0.08–0.16 µC) supports hard-switched and resonant ZVS operation without external snubbers.

The MOSFET features a 5.6 V gate plateau voltage, 11.0 Ω intrinsic gate resistance, and 120 V/ns dv/dt ruggedness-enabling stable switching in compact flyback and LLC converters where layout-induced noise and commutation stress are critical.

Key Specifications

Pinout & Package

IPD60R1K0PFD7SAUMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package complies with JEDEC MO-238 and MSL3 reflow standards (260°C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP60N1F32 and IPP60R1K0C7, IPD60R1K0PFD7SAUMA1 uniquely combines integrated fast body diode, Class 2 ESD protection, and 0.7 µJ E_oss-making it optimal for space-constrained, high-efficiency ZVS adapters where BOM count and assembly yield are critical.

Availability

IPD60R1K0PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor controllers, and industrial AC-DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPD60R1K0PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ PFD7 product line targets cost-sensitive, high-efficiency consumer power supplies-including chargers, adapters, and lighting-by combining superjunction performance with ease-of-use features like integrated diodes and ESD protection.

FAQ

What is the maximum continuous drain current for IPD60R1K0PFD7SAUMA1 at 100°C case temperature?

The maximum continuous drain current is 3.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating is thermally limited by the 150°C maximum junction temperature and 4.8 °C/W junction-to-case thermal resistance. Derating curves confirm linear reduction from 4.7 A at 25°C to 3.0 A at 100°C, ensuring safe operation without forced cooling in compact enclosures.

Does IPD60R1K0PFD7SAUMA1 require an external gate resistor for stability in ZVS applications?

Yes-while the device has 11.0 Ω intrinsic gate resistance, a discrete 10–22 Ω series gate resistor is recommended to damp ringing and control dv/dt during turn-on/off transients. Application Note AN2019-07 specifies that gate resistors below 10 Ω increase risk of oscillation in high-di/dt ZVS flyback layouts, especially with >10 cm gate trace lengths.

Can IPD60R1K0PFD7SAUMA1 be paralleled with identical units for higher current handling?

Parallel operation is feasible but requires careful layout: individual ferrite beads (10–22 Ω impedance at 100 MHz) on each gate line and separate totem-pole drivers per device are mandatory per Infineon's recommendation. Without these, mismatched threshold voltages and thermal gradients cause current imbalance exceeding 30% at full load, risking thermal runaway.

What is the reverse recovery behavior of the integrated body diode under 400 V blocking conditions?

At V_R = 400 V and I_F = 1.0 A, the body diode exhibits t_rr = 44–66 ns and Q_rr = 0.08–0.16 µC, with peak reverse recovery current I_rrm ≤ 3.2 A. These values are measured at di_F/dt = 100 A/µs; actual performance improves to <40 ns t_rr at 1300 A/µs due to optimized carrier lifetime control in the PFD7 process.