Infineon Technologies IPD60R2K0C6ATMA1

Overview

IPD60R2K0C6ATMA1 from Infineon Technologies is a 600 V, 2.0 Ω R_DS(on) CoolMOS™ C6 superjunction MOSFET optimized for hard-switching and resonant PFC/LLC stages in industrial SMPS, server power supplies, and telecom rectifiers. It delivers 1.7 A continuous drain current at T_C = 25 °C, features ultra-low gate charge (Q_G = 18 nC), and achieves <100 mJ avalanche energy rating.

For engineers reviewing the IPD60R2K0C6ATMA1 datasheet, IPD60R2K0C6ATMA1 pinout, IPD60R2K0C6ATMA1 application, or IPD60R2K0C6ATMA1 equivalent, key selection criteria include its 600 V V_DSS, 2.0 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, 1.7 A I_D, and TO-252 (DPAK) package suitability for high-efficiency, compact 65–300 W offline converters.

Technical Context

This device implements Infineon's Superjunction (SJ) MOSFET architecture with charge compensation cells, enabling low conduction loss without sacrificing switching speed. Its gate threshold voltage (V_GS(th)) of 3.0 V ensures robust noise immunity in high-noise industrial environments, while the 1.7 A I_D rating supports continuous operation up to T_C = 100 °C.

The 2.0 Ω R_DS(on) is specified at V_GS = 10 V and T_J = 25 °C, with a maximum of 2.4 Ω at T_J = 100 °C-enabling stable thermal performance across wide ambient ranges. Its 18 nC Q_G and 1.2 nC Q_GD support fast turn-on/turn-off transitions essential for >100 kHz PFC and LLC topologies.

Key Specifications

Pinout & Package

IPD60R2K0C6ATMA1 uses the TO-252 (DPAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 6.5 mm × 3.5 mm × 1.75 mm and supports solder-reflow mounting on 1 oz. copper PCBs with thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R2K0C6ATMA1 uniquely balances low R_DS(on), low Q_G, and DPAK thermal performance-making it optimal for space-constrained, high-frequency (>100 kHz) 100–300 W power stages where both efficiency and board area matter.

Availability

IPD60R2K0C6ATMA1 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPD60R2K0C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication facilities.

The CoolMOS™ C6 series was developed specifically for high-efficiency, high-density offline power conversion-targeting PFC, LLC, and resonant topologies in industrial, server, and telecom infrastructure where thermal and electrical performance must co-optimize.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD60R2K0C6ATMA1 has a rated maximum junction temperature of 150 °C. Derating begins at T_J > 125 °C per the datasheet's safe operating area (SOA) curves. At T_C = 100 °C, the device supports 1.2 A continuous drain current with 2.4 Ω R_DS(on), verified under JEDEC JESD51-2 test conditions using a 4-layer PCB with 2 oz. copper and 10 thermal vias.

Does this MOSFET require a negative gate turn-off voltage?

No. The IPD60R2K0C6ATMA1 operates reliably with 0 V to 10 V gate drive and does not require negative turn-off bias. Its V_GS(th) of 3.0 V provides sufficient noise margin against spurious turn-on in noisy industrial environments, and its 1.2 nC Q_GD ensures clean switching without Miller-induced oscillation when driven by standard 5–10 V logic-level gate drivers.

Can it replace older CoolMOS™ C3 or C7 devices in existing designs?

Direct replacement is possible only with layout and gate drive review. Compared to C3, C6 offers 25% lower R_DS(on) and 30% lower Q_G, but its faster dV/dt capability may increase EMI if snubbers or gate resistors are unchanged. C7 has tighter V_GS(th) tolerance and improved dv/dt immunity but is not pin-compatible-requiring schematic and layout revision.

Is the TO-252 package lead-free and RoHS-compliant?

Yes. The IPD60R2K0C6ATMA1 uses a Pb-free plating finish and halogen-free mold compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC JS709C. The "ATMA1" suffix confirms tape-and-reel packaging with moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH.