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Infineon Technologies IPD60R2K0PFD7SAUMA1

Part No.:
IPD60R2K0PFD7SAUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R2K0PFD7SAUMA1.pdf
Description:
MOSFET N-CH 600V 3A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,980

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Product details

Overview

IPD60R2K0PFD7SAUMA1 from Infineon Technologies is a 600 V, 2.0 Ω (max) superjunction MOSFET in DPAK (PG-TO252-3) package, featuring integrated fast body diode and ESD protection. It delivers 4.5 A pulsed drain current, 0.4 µJ Eoss at 400 V, and 1300 A/µs diF/dt capability-optimized for ZVS topologies in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPD60R2K0PFD7SAUMA1 datasheet, IPD60R2K0PFD7SAUMA1 pinout, IPD60R2K0PFD7SAUMA1 application, or IPD60R2K0PFD7SAUMA1 equivalent, key selection criteria include RDS(on) temperature stability, low gate charge (3.8 nC), commutation ruggedness, and thermal resistance (6.1 °C/W junction-to-case).

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) cell structure with optimized charge balance for reduced conduction and switching losses. Its 3.8 nC total gate charge and 1.5 nC Qgd enable efficient operation above 100 kHz while maintaining robust dv/dt immunity (120 V/ns).

The integrated fast-recovery body diode (trr = 34–51 ns, Qrr = 0.05–0.10 µC) and 1300 A/µs diF/dt rating support hard-commutated and resonant ZVS circuits without external snubbers. The 2000 mΩ RDS(on) max at 150 °C ensures stable performance across industrial temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
RDS(on), max 2000 mΩ at Tj = 150 °C - defines conduction loss ceiling in thermally constrained adapter PCB layouts.
Qg, typ 3.8 nC - enables low-drive-power gate control with standard 1-A peak drivers at >200 kHz.
Eoss @ 400 V 0.4 µJ - reduces turn-off energy loss and improves light-load efficiency in QR and ZVS flyback designs.
diF/dt 1300 A/µs - sustains reliable body-diode commutation in LLC half-bridge and active-clamp forward converters.
Tj max 150 °C - allows operation in sealed, fanless consumer power supplies without derating below full load.
RthJC 6.1 °C/W - permits direct heatsinking via DPAK tab for thermal management in space-constrained 30–65 W adapters.

Pinout & Package

Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal conduction and mechanical mounting. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives 10 V logic-level drive; 11 Ω internal gate resistance limits ringing and simplifies layout.
Pin 2 (Drain / Tab) High-voltage power input Electrically and thermally connected to copper tab-requires isolation from heatsink unless referenced to HV rail.
Pin 3 (Source) Power return and reference node Serves as local ground reference for gate driver; connects to low-side switch node or source resistor for current sensing.

Key Features

Feature Design Value
Ultra-low FOM RDS(on) × Qg 7.6 Ω·nC - balances conduction and switching loss for optimal efficiency at 100–300 kHz.
Fast body diode with soft recovery trr = 34–51 ns, Qrr = 0.05–0.10 µC - minimizes voltage overshoot and EMI during reverse recovery in ZVS transitions.
Integrated ESD protection HBM Class 2 (≥2 kV) - eliminates need for external TVS on gate in consumer-grade assembly lines.
Thermal robustness RthJC = 6.1 °C/W + Tj max = 150 °C - supports continuous 3.0 A DC current at 100 °C case temperature.

Applications

USB-C PD Adapters Smart LED Drivers

Use Scenario: 65 W compact USB-C power adapter operating in quasi-resonant flyback topology with 90–264 V AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and delivering 3.0 A pulsed drain current.

Use Value: Low Eoss (0.4 µJ) and fast body diode reduce no-load power and improve light-load efficiency to meet DOE VI/ERP Tier 2.

Use Scenario: Dimmable constant-current LED driver for commercial downlights using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with ZVS-assisted turn-on enabled by 1300 A/µs diF/dt rating.

Use Value: Enables <1% THD and flicker-free dimming down to 1% by eliminating reverse-recovery noise coupling into analog dimming circuitry.

BLDC Motor Controllers Industrial Power Tools

Use Scenario: 24 V, 300 W brushless DC motor in-circuit controller with integrated half-bridge and bootstrap gate drive.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter stage, driven by dedicated gate driver IC.

Use Value: 120 V/ns dv/dt ruggedness prevents false triggering during high di/dt phase-current transitions in 20 kHz PWM operation.

Use Scenario: Cordless power tool battery charger (18–60 V output) using active-clamp forward converter with synchronous rectification.

IC Role / Device Role / Timing Role: Clamp switch managing reset energy and enabling zero-voltage turn-on of main FET.

Use Value: Integrated zener diode clamps gate-source voltage during transient overvoltage events, eliminating external clamp components and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPD60R1K5PFD7SAUMA1 RDS(on) max = 1500 mΩ; Qg = 4.5 nC; same package and diF/dt Higher conduction loss margin but increased gate drive demand Select when thermal headroom is limited and switching frequency ≤150 kHz.
STP60N2K0 RDS(on) max = 2000 mΩ; Qg = 5.2 nC; no integrated ESD diode; TO-220FP package Larger footprint, higher gate drive loss, requires external ESD protection Choose only if legacy TO-220FP footprint compatibility is mandatory and cost is prioritized over board area.

Compared with IPD60R2K0PFD7SAUMA1, the IPD60R1K5PFD7SAUMA1 trades higher gate charge for lower RDS(on), while STP60N2K0 sacrifices integration and thermal efficiency for legacy packaging-making the original part optimal for new slim-profile consumer power designs.

Availability

IPD60R2K0PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor controllers, and cordless power tool chargers requiring stable component supply and long-term production continuity.

Supply support for IPD60R2K0PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and JEDEC standards.

This device belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer power electronics where slim form factor and ZVS compatibility are critical.

FAQ

Is IPD60R2K0PFD7SAUMA1 suitable for paralleling in high-current designs?

Yes, but with strict layout requirements: individual gate resistors (≥10 Ω) and ferrite beads on each gate line are mandatory per Infineon's application note AN2019-04. Matching PCB trace lengths and thermal coupling between devices are required to prevent current imbalance above 2.5 A per FET.

What is the maximum recommended gate drive voltage?

The absolute maximum static gate-source voltage is ±20 V, and dynamic (AC) rating is ±30 V. For reliable operation, gate drive should be clamped to 10–12 V with a 15 V-rated Zener; exceeding 12.5 V increases Qg disproportionately without meaningful RDS(on) improvement.

Does the integrated body diode replace an external freewheeling diode in flyback designs?

Yes-it is rated for 3.0 A continuous and 4.5 A pulsed forward current with 1.0 V typical VSD. However, its 34–51 ns trr and soft recovery make it suitable only for ZVS or QR flyback; hard-switched forward converters require external ultrafast diodes.

How does RDS(on) vary with temperature, and what is its impact on thermal design?

RDS(on) increases linearly from 1.626 Ω at 25 °C to 3.824 Ω at 150 °C (2.35× rise). At 100 °C junction, it reaches ~2.7 Ω-requiring thermal design to limit Tj to ≤115 °C for sustained 3.0 A DC operation, given RthJC = 6.1 °C/W and ambient constraints.

IPD60R2K0PFD7SAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ PFD7
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:
3.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
134 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
20W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-344

IPD60R2K0PFD7SAUMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPD60R2K0PFD7SAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPD60R2K0PFD7SAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R2K0PFD7SAUMA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPD60R2K0PFD7SAUMA1?

For technical support, including IPD60R2K0PFD7SAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R2K0PFD7SAUMA1 requirements.

6.How does Aetrix verify that IPD60R2K0PFD7SAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R2K0PFD7SAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R2K0PFD7SAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R2K0PFD7SAUMA1?

All IPD60R2K0PFD7SAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R2K0PFD7SAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R2K0PFD7SAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R2K0PFD7SAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD60R2K0PFD7SAUMA1 Tags

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