Infineon Technologies IPD60R360CFD7ATMA1

Overview

IPD60R360CFD7ATMA1 from Infineon Technologies is a 600 V, 360 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in DPAK (PG-TO252-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 14 nC gate charge, 0.28–0.56 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPD60R360CFD7ATMA1 datasheet, IPD60R360CFD7ATMA1 pinout, IPD60R360CFD7ATMA1 application, or IPD60R360CFD7ATMA1 equivalent, key selection criteria include RDS(on)×Qg FOM, hard commutation robustness, Qrr performance at 400 V, and thermal resistance (RthJC = 2.89 °C/W) for thermally constrained SMD designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction technology with an integrated ultra-fast body diode engineered for low Qrr (0.28–0.56 µC) and high diF/dt (1300 A/µs). Its gate plateau voltage is 5.8 V at 400 V VDD and 4.0 A ID, supporting stable ZVS turn-on in resonant converters.

The device features best-in-class RDS(on)×Eoss (1.6 µJ at 400 V) and RDS(on)×Qg figures of merit, with dynamic parameters measured under standardized conditions: VDD = 400 V, ID = 4.0 A, RG = 10.2 Ω, confirming suitability for high-frequency (>100 kHz) soft-switching operation.

Key Specifications

Pinout & Package

IPD60R360CFD7ATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal enhancement. Pin 1 is Gate, Pin 2 is Drain (tab-connected), Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPD60R360CFD2ATMA1 and STP60N3LLH6, IPD60R360CFD7ATMA1 provides superior soft-switching efficiency and body-diode ruggedness in compact DPAK, making it optimal for space-constrained, high-frequency resonant converters where thermal density and commutation reliability are critical.

Availability

IPD60R360CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-power-density SMD implementation.

Supply support for IPD60R360CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies such as phase-shift full-bridge and LLC converters in high-efficiency, high-power-density power supplies.

FAQ

What is the maximum continuous drain current for IPD60R360CFD7ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 5 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (2.89 °C/W) and maximum junction temperature (150 °C), ensuring safe operation without exceeding thermal limits under steady-state conduction.

Does IPD60R360CFD7ATMA1 require a gate resistor for stability in ZVS applications?

Yes - a 10.2 Ω gate resistor is used in the datasheet's dynamic test conditions (Table 9) to control dv/dt and suppress oscillation. For ZVS operation, this value balances turn-off speed and gate ringing; values below 8 Ω increase risk of overshoot, while above 15 Ω extends td(off) and raises switching loss.

Can IPD60R360CFD7ATMA1 be paralleled with identical units?

Yes, but Infineon recommends ferrite beads on each gate line or separate totem-pole drivers to ensure balanced dynamic current sharing. Without these measures, mismatched Q_g and layout parasitics can cause unequal current distribution and localized thermal runaway during hard commutation events.

What is the typical reverse recovery charge (Q_rr) at 125 °C junction temperature?

Q_rr increases with temperature: at T_j = 125 °C, typical Q_rr rises to ~0.72 µC (extrapolated from Figure 15 in Rev. 2.1 datasheet), compared to 0.28–0.56 µC at 25 °C. Designers must verify SOA margins at elevated temperature using the provided diF/dt and trr curves.