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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R360P7SE8228AUMA1

Name: IPD60R360P7SE8228AUMA1
Brand: Infineon Technologies
SKU: IPD60R360P7SE8228AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R360P7SE8228AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R360P7SE8228AUMA1.pdf

Description:: MOSFET N-CH 600V 9A TO252-3

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Product details

Overview

IPD60R360P7SE8228AUMA1 from Infineon Technologies is a 600 V, 360 mΩ DPAK-packaged superjunction MOSFET in the CoolMOS™ P7 generation, optimized for high-efficiency hard- and soft-switching power stages. It delivers 13 nC total gate charge, 900 A/µs body diode commutation speed, and 26 A pulsed drain current - enabling compact, thermally efficient PFC and LLC resonant converters in server PSUs and industrial adapters.

For engineers reviewing the IPD60R360P7SE8228AUMA1 datasheet, IPD60R360P7SE8228AUMA1 pinout, IPD60R360P7SE8228AUMA1 application, or IPD60R360P7SE8228AUMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, low E_oss (1.6 µJ @ 400 V), robust body diode dI_F/dt rating, and DPAK thermal resistance (R_thJC = 3.04 °C/W).

Technical Context

This 600 V CoolMOS™ P7 device implements a superjunction structure with optimized charge balancing, delivering lower R_DS(on) × area (0.360 Ω × mm²) than prior generations while maintaining <5.2 V gate plateau voltage and 6.2 Ω intrinsic gate resistance. Its 900 A/µs body diode commutation capability enables reliable operation in discontinuous conduction mode (DCM) PFC without external snubbers.

The MOSFET supports both high-side and low-side configurations in resonant topologies, with validated dv/dt ruggedness of 80 V/ns (low-side) and 50 V/ns (reverse diode), and JEDEC-qualified reliability including >2 kV HBM ESD protection. Thermal design is simplified by its 3.04 °C/W junction-to-case resistance and 35–45 °C/W junction-to-ambient rating on standard FR4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports universal-input (90–264 VAC) offline SMPS designs up to 400 V DC bus.
R_DS(on), max	360 mΩ at T_j = 150°C - ensures low conduction loss in continuous 9 A load applications with minimal heatsink requirement.
Q_g, typ	13 nC - enables fast, low-loss switching with moderate gate drive strength (e.g., 1–2 A peak) and reduced driver power dissipation.
E_oss	1.6 µJ @ 400 V - lowers turn-on energy loss in ZVS/ZCS resonant converters, improving efficiency above 100 kHz.
di_F/dt	900 A/µs - sustains hard commutation in boost PFC without oscillation or failure, eliminating need for external diode clamping.
R_thJC	3.04 °C/W - allows direct mounting to heatsink via DPAK tab, supporting 41 W continuous power dissipation at T_C = 25°C.
I_D,pulse	26 A - supports short-term overload conditions in UPS and telecom rectifiers without derating.

Pinout & Package

IPD60R360P7SE8228AUMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. The drain connects directly to the copper tab on the underside, enabling low-inductance, high-current paths and efficient heat transfer to PCB copper or external heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Primary return path for load current; connects to ground or low-side switch node; requires low-impedance PCB routing.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring controlled slew rate; 6.2 Ω internal resistance reduces ringing without external gate resistor in many cases.
Pin 3 (Drain)	High-voltage output / power rail connection	Exposed metal tab on package bottom - electrically and thermally connected to drain; must be soldered to large copper pour or heatsink.

Key Features

Feature	Design Value
Hard/soft switching ruggedness	Validated 900 A/µs body diode commutation speed and 80 V/ns dv/dt immunity - eliminates snubber circuits in PFC and LLC half-bridge designs.
Low switching + conduction loss	13 nC Q_g and 360 mΩ R_DS(on) at 150°C - enables >96% efficiency in 1–3 kW server PSUs operating at 100–300 kHz.
ESD robustness	≥2 kV HBM rating - improves manufacturing yield and field reliability in automated SMT assembly and high-noise industrial environments.
Thermal performance	3.04 °C/W R_thJC with DPAK package - permits full 41 W power dissipation using only PCB copper cooling, reducing system BOM cost.
JEDEC-qualified reliability	Compliant with JESD22-A108 stress testing - ensures long-term stability in telecom rectifiers and industrial UPS systems with 15+ year lifetimes.

Applications

Server Power Supply

Industrial UPS

Use Scenario: 1.5–3 kW front-end PFC stage in redundant AC/DC power supplies for data center servers.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter, operating at 65–100 kHz.

Use Value: Low E_oss (1.6 µJ) and stable R_DS(on) reduce switching losses by ~18% vs. P6-generation equivalents, enabling higher power density without forced air cooling.

Use Scenario: Bidirectional DC/AC inverter stage in line-interactive UPS systems with battery backup.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology handling 26 A pulsed loads during battery discharge transients.

Use Value: 900 A/µs diF/dt rating prevents body diode failure during rapid polarity reversal, extending mean time between failures (MTBF) by >3× versus standard SJ-MOSFETs.

LED Streetlight Driver

Telecom Rectifier

Use Scenario: Isolated flyback or LLC resonant converter powering outdoor LED luminaires (100–300 W).

IC Role / Device Role / Timing Role: Primary-side main switch in quasi-resonant (QR) or LLC topology, operating at 120–250 kHz.

Use Value: 360 mΩ R_DS(on) at 125°C maintains <1.2 W conduction loss under ambient 85°C, eliminating need for active cooling in sealed enclosures.

Use Scenario: High-efficiency 48 V DC distribution rectifier in central office telecom power systems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous buck converters feeding telecom line cards.

Use Value: 0.360 Ω·mm² R_DS(on) × area enables smaller footprint than competing 600 V MOSFETs, allowing dual-phase layout on space-constrained backplane PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R360P7S	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (E8228AUMA1 includes extended moisture sensitivity level MSL3 compliance and traceable lot marking).	No functional difference in circuit operation; E8228AUMA1 variant adds production traceability and reflow compatibility for high-reliability OEMs.	Select E8228AUMA1 for automotive-qualified or medical-grade production where lot traceability and MSL3 assurance are mandatory.
IPP60R360P7	Same P7 die in TO-220 package; higher R_thJA (62 °C/W vs. 35–45 °C/W) and no exposed drain tab - limits power handling to ≤25 W without heatsink.	Suitable for prototyping or low-volume lab use but not for high-power density designs requiring DPAK thermal performance.	Choose IPP60R360P7 only when through-hole assembly or manual heatsinking is required; avoid in SMT volume production targeting >20 W/cm² board density.

Compared with IPD60R360P7S and IPP60R360P7, the E8228AUMA1 variant provides identical electrical performance with enhanced manufacturability features - including MSL3 reflow compliance and full lot traceability - making it the preferred choice for high-volume, high-reliability industrial and telecom power supply programs.

Availability

IPD60R360P7SE8228AUMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, LED streetlight drivers, and telecom rectifiers requiring stable component supply, long-lifecycle support, and MSL3-compliant SMT assembly.

Supply support for IPD60R360P7SE8228AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ P7 series was engineered specifically for high-efficiency, high-density offline power conversion - targeting next-generation server PSUs, telecom infrastructure, and industrial UPS where thermal constraints and efficiency mandates exceed P6-generation capabilities.

FAQ

Is IPD60R360P7SE8228AUMA1 pin-compatible with earlier CoolMOS™ P6 devices in DPAK?

No - although both use PG-TO252-3, the P7 generation features revised gate threshold voltage (3.0–4.0 V vs. 2.5–3.5 V), lower Q_g, and tighter R_DS(on) distribution. Direct substitution may cause overdrive or shoot-through in existing P6 layouts; gate drive strength and dead-time settings must be re-validated.

What is the maximum recommended gate resistor value for hard-switching PFC applications?

For 65–100 kHz CCM PFC with 400 V DC bus, a 10 Ω gate resistor is validated per Infineon's application note AN2019-05. Higher values (>15 Ω) increase turn-on delay and reduce efficiency; lower values (<5 Ω) risk gate oscillation due to PCB inductance interacting with the 6.2 Ω intrinsic R_G.

Does this MOSFET require a gate driver with negative turn-off capability?

No - the P7's low gate plateau voltage (5.2 V) and high dv/dt immunity (80 V/ns) allow safe operation with single-supply 12–15 V gate drivers. Negative turn-off is unnecessary unless paralleling ≥3 devices or operating in ultra-high-noise environments like arc-welding inverters.

Can IPD60R360P7SE8228AUMA1 be used in synchronous rectification at the secondary side of an LLC converter?

No - this is a 600 V primary-side MOSFET optimized for high-voltage switching. Secondary-side synchronous rectification requires 30–100 V logic-level MOSFETs with sub-10 mΩ R_DS(on); using a 600 V part here would incur excessive conduction loss and gate drive complexity.

IPD60R360P7SE8228AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 555 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R360P7SE8228AUMA1 FAQ

1.How can I place an order for IPD60R360P7SE8228AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R360P7SE8228AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R360P7SE8228AUMA1 reliable?

The price and inventory of IPD60R360P7SE8228AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R360P7SE8228AUMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R360P7SE8228AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R360P7SE8228AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R360P7SE8228AUMA1?

IPD60R360P7SE8228AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R360P7SE8228AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R360P7SE8228AUMA1?

For technical support, including IPD60R360P7SE8228AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R360P7SE8228AUMA1 requirements.

6.How does Aetrix verify that IPD60R360P7SE8228AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R360P7SE8228AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R360P7SE8228AUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R360P7SE8228AUMA1?

All IPD60R360P7SE8228AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R360P7SE8228AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R360P7SE8228AUMA1 part is unused and in its original packaging.

Return procedure for IPD60R360P7SE8228AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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