Infineon Technologies IPD60R360PFD7SAUMA1

Overview

IPD60R360PFD7SAUMA1 from Infineon Technologies is a 600 V, 360 mΩ superjunction MOSFET in DPAK (PG-TO252-3) package, featuring integrated fast body diode and ESD protection. It delivers 12.7 nC gate charge, 1.6 µJ output switching energy at 400 V, and supports ZVS topologies in high-density chargers and lighting drivers.

For engineers reviewing the IPD60R360PFD7SAUMA1 datasheet, IPD60R360PFD7SAUMA1 pinout, IPD60R360PFD7SAUMA1 application, or IPD60R360PFD7SAUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, di_F/dt ruggedness (1300 A/µs), E_oss-driven efficiency at >100 kHz, and DPAK thermal resistance (R_thJC = 2.89 °C/W).

Technical Context

This CoolMOS™ PFD7 device implements superjunction architecture with optimized charge balancing for low R_DS(on) × Q_g (1.14 Ω·nC) and R_DS(on) × E_oss (576 mΩ·µJ). Its fast intrinsic body diode enables reliable zero-voltage switching in resonant converters without external diode snubbing.

The MOSFET integrates a zener-protected gate and HBM Class 2 ESD structure. Thermal design leverages the DPAK drain-tab layout for direct PCB copper cooling, achieving 35–45 °C/W R_thJA on 6 cm² FR4 copper-critical for slim adapter form factors.

Key Specifications

Pinout & Package

Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPD60R360PFD7SAUMA1, the IPD60R360PFD7S offers identical performance at lower qualification cost, while IPP60R360PFD7 trades DPAK's compactness for superior thermal headroom in TO-220FP-enabling higher continuous current in non-space-constrained designs.

Availability

IPD60R360PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, dimmable LED drivers, BLDC motor inverters, and industrial power supplies requiring stable component supply and JEDEC-qualified high-voltage MOSFETs.

Supply support for IPD60R360PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered for cost-sensitive, high-efficiency consumer power conversion-specifically targeting slim adapters, lighting, and motor drives operating at 100–500 kHz.

FAQ

What is the maximum continuous drain current for IPD60R360PFD7SAUMA1 at 100°C case temperature?

The maximum continuous drain current is 6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This limit is thermally derived from the 150°C maximum junction temperature and 2.89 °C/W junction-to-case thermal resistance, ensuring safe operation without derating beyond datasheet conditions.

Does IPD60R360PFD7SAUMA1 require an external gate resistor for stability in ZVS circuits?

Yes-Infineon recommends a gate resistor of 10.2 Ω (as used in characterization) to control dV/dt and prevent oscillation during ZVS transitions. The device's 11.0 Ω intrinsic gate resistance interacts with external R_G to set total gate loop impedance, directly affecting turn-on speed and EMI.

Can IPD60R360PFD7SAUMA1 be paralleled with identical units without current imbalance issues?

Paralleling is feasible but requires gate ferrite beads or separate totem-pole drivers per device, as noted in the datasheet. Without these, mismatched gate delays and parasitic inductance cause dynamic current imbalance-especially critical above 100 kHz due to the device's low Q_gd/Q_gs ratio.

What is the reverse recovery charge (Q_rr) of the integrated body diode at 125°C junction temperature?

Q_rr increases with temperature: at T_j = 125°C, typical Q_rr rises to 0.28 µC (max 0.35 µC), per Table 7 and Figure 12 in the datasheet. This increase must be accounted for in ZVS timing calculations to avoid hard-switching during light-load conditions.