Infineon Technologies IPD60R600P7SE8228AUMA1

Overview

IPD60R600P7SE8228AUMA1 from Infineon Technologies is a 600 V, 0.6 Ω R_DS(on) superjunction MOSFET in DPAK (PG-TO252-3) package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 9 nC gate charge, 900 A/µs body diode commutation speed, and operates up to 150 °C junction temperature - enabling compact, thermally robust designs in server power supplies and telecom rectifiers.

For engineers reviewing the IPD60R600P7SE8228AUMA1 datasheet, IPD60R600P7SE8228AUMA1 pinout, IPD60R600P7SE8228AUMA1 application, or IPD60R600P7SE8228AUMA1 equivalent, key selection criteria include its low E_oss (1.1 µJ @ 400 V), 80 V/ns dv/dt ruggedness, and JEDEC-qualified hard-switching capability - critical for reliable operation in high-density AC-DC front-end stages.

Technical Context

This CoolMOS™ P7 generation device employs superjunction architecture with optimized charge balancing, delivering significantly lower conduction and switching losses than prior P6 series. Its 5.2 V gate plateau voltage and 6.3 Ω intrinsic gate resistance support stable drive under fast dV/dt transients without external gate damping.

The MOSFET integrates a robust body diode rated for 900 A/µs reverse recovery diF/dt and 160 ns trr at 400 V, enabling reliable operation in discontinuous and quasi-resonant topologies without snubber circuits. Thermal design is simplified by R_thJC = 4.19 °C/W and validated 2 kV HBM ESD robustness.

Key Specifications

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-drain tab with exposed thermal pad. Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPD60R600P7SE8228AUMA1, the IPD60R600P7S offers identical performance at lower traceability assurance, while the STP60N60DM6 trades higher conduction efficiency for increased switching loss and reduced commutation robustness - making it unsuitable for high-reliability 300 kHz+ resonant designs.

Availability

IPD60R600P7SE8228AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, full lot traceability, and JEDEC-qualified ruggedness.

Supply support for IPD60R600P7SE8228AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices since 1999.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current for IPD60R600P7SE8228AUMA1 at 100 °C case temperature?

The maximum continuous drain current is 4 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating is limited by junction temperature (T_j,max = 150 °C) and thermal resistance (R_thJC = 4.19 °C/W). Derating is linear between 25 °C and 100 °C, with 6 A allowed at T_C = 25 °C.

Does this MOSFET require a gate resistor for stable operation in a 100 kHz PFC boost stage?

No external gate resistor is strictly required due to its 6.3 Ω intrinsic gate resistance and low ringing tendency, as confirmed in the "Ease of use" feature section. However, a 5–10 Ω series resistor is recommended for EMI suppression and to limit peak gate current when using high-speed drivers with <10 ns rise time.

Can IPD60R600P7SE8228AUMA1 be paralleled with identical units in a high-current LLC half-bridge?

Yes, but with strict layout controls: individual gate resistors (10–22 Ω), ferrite beads on each gate line, and symmetrical PCB routing to minimize loop inductance. The datasheet explicitly recommends this approach in the "MOSFET paralleling" note, citing improved current sharing and reduced thermal stress under unbalanced conditions.

What is the safe operating area (SOA) limitation at 100 °C case temperature for pulsed operation?

At T_C = 100 °C, the SOA is limited to 4 A continuous or 16 A pulsed (t_p ≤ 100 µs, duty cycle ≤ 0.5), per Figure 3 in the datasheet. Beyond 100 µs pulse width, derating follows the DC curve with R_thJC-based thermal limits - e.g., 8 A max at t_p = 1 ms.