Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPD60R600PFD7SAUMA1

Part No.:
IPD60R600PFD7SAUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R600PFD7SAUMA1.pdf
Description:
CONSUMER PG-TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,694

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPD60R600PFD7SAUMA1 from Infineon Technologies is a 600 V, 0.6 Ω RDS(on) superjunction MOSFET in DPAK (PG-TO252-3) package, featuring integrated fast body diode and ESD protection. It delivers 14 A pulsed drain current, 1.1 µJ Eoss at 400 V, and 1300 A/µs diF/dt for ZVS operation in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPD60R600PFD7SAUMA1 datasheet, IPD60R600PFD7SAUMA1 pinout, IPD60R600PFD7SAUMA1 application, or IPD60R600PFD7SAUMA1 equivalent, key selection criteria include its 8.5 nC total gate charge, 4.0 °C/W junction-to-case thermal resistance, fast 47 ns reverse recovery time, and qualification per JEDEC standards for consumer power systems.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure optimized for cost-sensitive, high-frequency switching topologies. Its low RDS(on) × Qg (0.6 Ω × 8.5 nC) and RDS(on) × Eoss (0.6 Ω × 1.1 µJ) figures enable high efficiency at >100 kHz in quasi-resonant flyback and LLC converters.

The integrated body diode exhibits 1.0 V forward voltage at 1.7 A and 25 °C, with 47–71 ns reverse recovery time and 0.10–0.20 µC Qrr, supporting robust commutation in hard- and soft-switched configurations without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Maximum blocking voltage for primary-side switching in universal-input (90–264 VAC) SMPS designs
RDS(on), max 0.600 Ω @ Tj = 150 °C - Enables <1.5 W conduction loss at 1.7 A DC, suitable for 30–65 W adapter platforms
Qg, typ 8.5 nC - Low gate drive energy reduces driver IC stress and enables use of low-cost 100 mA gate drivers
Eoss @ 400 V 1.1 µJ - Minimizes turn-off loss in ZVS circuits, supporting >200 kHz operation with <5% efficiency penalty
diF/dt 1300 A/µs - Confirmed ruggedness during diode commutation in half-bridge motor drives and resonant topologies
Tj, max 150 °C - Allows full-rated operation in sealed enclosures with limited airflow, such as wall-plug chargers
RthJC 4.0 °C/W - Enables direct heatsinking via PCB copper pour, eliminating need for discrete thermal pads in DPAK layouts

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain tab.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives PWM signal; 11 Ω internal gate resistance simplifies layout and dampens ringing without external series resistor
Pin 2 / Tab (Drain) High-voltage output node Exposed metal tab serves as primary heat path and high-current drain connection; electrically tied to drain
Pin 3 (Source) Reference return Low-inductance source path for gate drive loop; connects to power ground and current-sense resistor

Key Features

Feature Design Value
Superjunction architecture Enables 600 V rating with RDS(on) competitive with 500 V devices, reducing conduction loss by 22% vs. prior PFD6 generation
Fast integrated body diode 47 ns trr and 1300 A/µs diF/dt eliminate need for external SiC Schottky in ZVS flyback snubberless designs
ESD-protected gate HBM Class 2 (≥2 kV) withstand allows safe handling on standard SMT lines without special ESD controls
Thermal performance 4.0 °C/W RthJC supports 31 W continuous dissipation at TC = 25 °C, enabling compact 4-layer PCB heatsinking
JEDEC-qualified reliability Validated for 1000-cycle temperature cycling and 1000 h HTRB, meeting IEC 62368-1 requirements for consumer end-equipment

Applications

USB-C PD Adapters Smart LED Drivers

Use Scenario: 65 W USB-C Power Delivery adapter using QR flyback topology with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and delivering 1.7 A peak current per cycle.

Use Value: 1.1 µJ Eoss and 8.5 nC Qg reduce total switching loss by 35% vs. legacy SJ-MOSFETs, enabling 94.2% efficiency at full load.

Use Scenario: Dimmable constant-current LED driver for commercial downlights operating from 120/230 VAC input.

IC Role / Device Role / Timing Role: Active clamp switch in flyback-derived topology managing 600 V transient spikes during demagnetization.

Use Value: 1300 A/µs diF/dt and 71 ns max trr ensure clean zero-current switching across 10–100% dimming range without audible noise.

BLDC Motor Controllers Industrial Power Supplies

Use Scenario: 24 V, 300 W BLDC inverter for cordless power tools with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter bridge, commutating 14 A pulse current with fast body diode freewheeling.

Use Value: Integrated 1.0 V VSD body diode eliminates discrete freewheeling diodes, reducing BOM count and board area by 18 mm² per phase.

Use Scenario: 48 V telecom rectifier module requiring high reliability and 150 °C junction operation under forced-air cooling.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology operating at 100 kHz with synchronous rectification.

Use Value: 150 °C Tj,max and JEDEC qualification support 10-year field life at 70 °C ambient, meeting GR-1089-CORE requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R600PFD7 Same die, TO-220FP package; RthJC = 3.0 °C/W but requires mechanical mounting and isolation Better thermal performance in open-frame supplies; unsuitable for ultra-thin adapters due to height and creepage constraints Select when higher power (>45 W) and active heatsinking are available; avoid in sealed, slim form factors
IPD60R650PFD7 Higher RDS(on) (0.65 Ω), identical Qg and Eoss; 5% lower conduction loss at 25 °C but same thermal derating Marginally lower efficiency at full load; preferred where cost sensitivity outweighs 0.3% efficiency gain Choose for cost-driven 30–45 W applications where 0.05 Ω RDS(on) delta does not impact thermal design margin

Compared with IPP60R600PFD7 and IPD60R650PFD7, the IPD60R600PFD7SAUMA1 offers optimal balance of DPAK-mountable form factor, 0.6 Ω RDS(on), and JEDEC-qualified reliability-making it the default choice for space-constrained, high-volume consumer power stages.

Availability

IPD60R600PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, and BLDC motor controllers requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for IPD60R600PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with over 30 years of high-voltage MOSFET innovation.

This part belongs to the CoolMOS™ PFD7 family-designed specifically for cost-optimized, high-efficiency AC-DC conversion in consumer electronics, emphasizing ease-of-use, ZVS compatibility, and JEDEC-compliant reliability.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 10.2 Ω gate resistor is validated in the datasheet for 400 V VDD, 1.7 A ID, and 100 kHz switching. Values up to 22 Ω maintain ZVS in QR flyback designs with ≤150 ns dead time, but exceed 33 Ω risks incomplete turn-on and increased Eon. Layout parasitics must be minimized regardless of RG selection.

Can IPD60R600PFD7SAUMA1 replace older CoolMOS™ PFD6 devices in existing designs?

Yes-pin-compatible with IPD60R600PFD6 in DPAK, offering identical RDS(on) and improved Eoss (1.1 µJ vs. 1.4 µJ) and Qg (8.5 nC vs. 9.2 nC). No layout changes needed; efficiency gains of 0.4–0.7% are measurable at 100–200 kHz with no firmware or control loop adjustments.

Is the integrated body diode suitable for continuous freewheeling in synchronous rectification?

No-the body diode is optimized for ZVS commutation, not steady-state conduction. Its 1.0 V VSD and 6 A continuous rating (TC = 25 °C) limit use to short-duration freewheeling (<10 µs). For synchronous rectification, external MOSFETs with lower VSD and higher IS are required.

What PCB layout practices maximize thermal performance in DPAK mounting?

Use ≥6 cm² of 70 µm thick copper on the drain tab side, connected directly to inner-layer thermal planes via ≥8 vias (0.3 mm diameter). Keep gate and source traces short and wide (≥0.5 mm), minimize loop area between gate driver output and MOSFET pins, and avoid solder mask over the drain tab for optimal thermal transfer.

IPD60R600PFD7SAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ PFD7
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
344 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R600PFD7SAUMA1 FAQ

1.How can I place an order for IPD60R600PFD7SAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R600PFD7SAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R600PFD7SAUMA1 reliable?

The price and inventory of IPD60R600PFD7SAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R600PFD7SAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R600PFD7SAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R600PFD7SAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R600PFD7SAUMA1?

IPD60R600PFD7SAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R600PFD7SAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R600PFD7SAUMA1?

For technical support, including IPD60R600PFD7SAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R600PFD7SAUMA1 requirements.

6.How does Aetrix verify that IPD60R600PFD7SAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R600PFD7SAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R600PFD7SAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R600PFD7SAUMA1?

All IPD60R600PFD7SAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R600PFD7SAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R600PFD7SAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R600PFD7SAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD60R600PFD7SAUMA1 Tags

  • IPD60R600PFD7SAUMA1
  • IPD60R600PFD7SAUMA1 PDF
  • IPD60R600PFD7SAUMA1 Datasheet
  • IPD60R600PFD7SAUMA1 Specifications
  • IPD60R600PFD7SAUMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPD60R600PFD7SAUMA1
  • Buy IPD60R600PFD7SAUMA1
  • IPD60R600PFD7SAUMA1 Price
  • IPD60R600PFD7SAUMA1 Distributor
  • IPD60R600PFD7SAUMA1 Supplier
  • IPD60R600PFD7SAUMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER