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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R800CEAUMA1

Name: IPD60R800CEAUMA1
Brand: Infineon Technologies
SKU: IPD60R800CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R800CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R800CEAUMA1.pdf

Description:: CONSUMER

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Product details

Overview

IPD60R800CEAUMA1 from Infineon Technologies is a 600 V, 800 mΩ superjunction N-channel MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 8.4 A continuous drain current at T_C = 25°C, 17.2 nC total gate charge, and 1.6 µJ output switching energy at 400 V - enabling compact, cost-sensitive lighting and adapter designs.

For engineers reviewing the IPD60R800CEAUMA1 datasheet, IPD60R800CEAUMA1 pinout, IPD60R800CEAUMA1 application, or IPD60R800CEAUMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven ZVS capability, commutation ruggedness (500 A/µs di/dt), and thermal resistance (R_thJC = 1.70 °C/W) for PCB-constrained cooling.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) support standard 10–13 V gate drivers without level-shifting.

The integrated body diode exhibits 250 ns reverse recovery time and 1.8 µC Q_rr at 400 V, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies. dv/dt ruggedness is rated at 50 V/ns for low-side switching and 15 V/ns for reverse diode commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50% margin for surge and ringing in offline SMPS.
R_DS(on),max	800 mΩ at T_j = 25°C - enables <8.4 A continuous conduction with ≤6.7 W conduction loss at 25°C case temp.
Q_g,typ	17.2 nC - determines gate drive power and switching speed; compatible with standard 1-A peak drivers.
E_oss@400V	1.6 µJ - directly impacts turn-on loss in ZVS circuits; enables >100 kHz operation in LLC resonant converters.
I_D,pulse	15.7 A - supports short-term overload handling in adapter burst-mode or PFC overcurrent events.
R_thJC	1.70 °C/W - allows 74 W power dissipation at T_C = 25°C; requires ≥6 cm² copper pour for thermal management.

Pinout & Package

IPD60R800CEAUMA1 uses the DPAK (PG-TO252) surface-mount package with exposed drain tab on the underside for thermal conduction. The package is RoHS-compliant, halogen-free, and qualified for standard-grade industrial applications.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; 11 Ω internal gate resistance limits dV/dt-induced oscillation.
Pin 2 (Drain)	High-voltage power terminal	Connected to PCB drain copper pour; electrically and thermally coupled to exposed metal tab.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables high efficiency at 65–100 kHz without sacrificing gate drive simplicity or layout sensitivity.
High commutation ruggedness	Rated for 500 A/µs di/dt and 50 V/ns dv/dt - supports reliable operation in hard-switched flyback and forward converters.
Optimized body diode	250 ns t_rr and low Q_rr reduce reverse recovery losses in DCM PFC and quasi-resonant topologies.
Pb-free plating & halogen-free mold compound	Meets JEDEC MSL3 reflow requirements and environmental compliance for global consumer electronics manufacturing.

Applications

LED Driver Power Stage

PC Silverbox PFC

Use Scenario: Constant-current LED driver operating from universal AC input with active PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage, switching at 65–133 kHz with critical conduction mode control.

Use Value: 800 mΩ R_DS(on) and 1.6 µJ E_oss enable >95% PFC efficiency at 100 W while minimizing heatsink size.

Use Scenario: 300–500 W ATX PC power supply with two-stage conversion (PFC + LLC).

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC controller.

Use Value: 15.7 A pulse rating and 72 mJ single-pulse avalanche energy ensure robustness during line surges and startup transients.

LCD TV Backlight Inverter

USB-C PD Adapter

Use Scenario: High-voltage DC-DC stage powering CCFL or edge-lit LED backlights in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: Main switch in asymmetrical half-bridge or flyback converter operating up to 100 kHz.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt transitions across transformer leakage inductance.

Use Scenario: 65 W GaN-assisted or all-Si USB-C PD fast charger with active clamp flyback or QR topology.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback with valley switching.

Use Value: Low E_oss and fast turn-off (62 ns total) reduce switching loss and improve light-load efficiency compliance with DoE Level VI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R600CE	R_DS(on) = 600 mΩ (lower conduction loss), Q_g = 22.5 nC (higher drive demand), same package and voltage rating.	Better suited for fixed-frequency CCM PFC where conduction loss dominates; less optimal for high-frequency QR designs due to higher E_oss.	Select when thermal headroom is limited and gate drive capability supports higher Q_g.
STP60N6F6	600 V, 0.6 Ω, TO-220 package, higher R_thJC (1.5 °C/W), no E_oss spec, slower t_r/t_f.	Designed for legacy hard-switched SMPS; lacks CoolMOS™ CE's ZVS-enabling E_oss and di/dt ruggedness.	Consider only for cost-driven replacements where layout and thermal design are unchanged and frequency ≤65 kHz.

Compared with IPD60R600CE and STP60N6F6, IPD60R800CEAUMA1 offers the best balance of low gate charge (17.2 nC), ultra-low E_oss (1.6 µJ), and proven commutation ruggedness - making it optimal for space-constrained, high-frequency adapters and lighting drivers where both efficiency and reliability are critical.

Availability

IPD60R800CEAUMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC modules, and LCD TV backlight inverters requiring stable component supply and long-term industrial availability.

Supply support for IPD60R800CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CE series was developed to deliver price-performance leadership in 600 V superjunction MOSFETs for cost-sensitive consumer and lighting applications without compromising efficiency or ruggedness.

FAQ

What is the maximum junction temperature rating for IPD60R800CEAUMA1?

The absolute maximum operating junction temperature is 150°C, with derated continuous drain current (5.3 A) at T_C = 100°C. Thermal design must maintain T_j ≤ 150°C under worst-case ambient and power dissipation conditions, using the specified R_thJC = 1.70 °C/W and PCB copper area guidelines.

Can IPD60R800CEAUMA1 be used in parallel configurations?

Yes, but Infineon recommends gate ferrite beads or individual totem-pole drivers per device to suppress gate oscillation and ensure current sharing. Layout symmetry, matched gate trace lengths, and Kelvin source routing are mandatory; paralleling increases total Q_g and requires proportionally higher gate drive current capability.

Does this MOSFET have avalanche capability, and how is it rated?

It is rated for 72 mJ single-pulse avalanche energy (E_AS) at I_D = 1 A and V_DD = 50 V, and 0.17 mJ repetitive avalanche energy (E_AR). These ratings assume proper SOA adherence and are validated per JEDEC JESD24-11; sustained avalanche operation is not recommended.

Is IPD60R800CEAUMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its 1.6 µJ E_oss at 400 V and low C_oss (27 pF) enable efficient ZVS in LLC and active-clamp flyback converters. The device's 50 V/ns dv/dt rating ensures robustness during resonant transitions, and its 250 ns t_rr minimizes diode-related losses in half-bridge configurations.

IPD60R800CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs:: 17.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 373 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-344

IPD60R800CEAUMA1 FAQ

1.How can I place an order for IPD60R800CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R800CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R800CEAUMA1 reliable?

The price and inventory of IPD60R800CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R800CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R800CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R800CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R800CEAUMA1?

IPD60R800CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R800CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R800CEAUMA1?

For technical support, including IPD60R800CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R800CEAUMA1 requirements.

6.How does Aetrix verify that IPD60R800CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R800CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R800CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R800CEAUMA1?

All IPD60R800CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R800CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R800CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R800CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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