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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R420CFDAATMA1

Name: IPD65R420CFDAATMA1
Brand: Infineon Technologies
SKU: IPD65R420CFDAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R420CFDAATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R420CFDAATMA1.pdf

Description:: MOSFET N-CH 650V 8.7A TO252-3

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Product details

Overview

IPD65R420CFDAATMA1 from Infineon Technologies is a 650 V, 0.42 Ω (max) DPAK-packaged CoolMOS™ CFDA superjunction N-channel power MOSFET with ultra-fast body diode, 32 nC typical gate charge, and 27 A pulsed drain current. It serves as a high-efficiency primary-side switch in resonant LLC and PFC stages of industrial SMPS and server power supplies.

For engineers reviewing the IPD65R420CFDAATMA1 datasheet, IPD65R420CFDAATMA1 pinout, IPD65R420CFDAATMA1 application, or IPD65R420CFDAATMA1 equivalent, key selection criteria include its 900 A/µs diode commutation ruggedness, 2.8 µJ Eoss at 400 V, 140 ns trr, 50 V/ns dv/dt rating, and AEC-Q101 qualification for automotive-grade reliability in harsh environments.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for zero-voltage switching (ZVS) and zero-current switching (ZCS) topologies. Its low R_DS(on) × Q_g figure-of-merit (0.42 Ω × 32 nC = 13.44 Ω·nC) enables high-frequency operation while maintaining low conduction and switching losses.

The integrated ultra-fast body diode supports hard-commutation in half-bridge and full-bridge configurations without external anti-parallel diodes. Its 6.4 V gate plateau voltage and 4 Ω internal gate resistance simplify gate driver design and reduce ringing risk under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC-link applications with ≥30% voltage margin for surge and ripple handling
R_DS(on), max	0.42 Ω @ T_j = 25°C - Enables <1.8 W conduction loss at 5 A continuous drain current
Q_g, typ	32 nC - Reduces gate drive power requirement and allows use of low-power drivers like 1EDN7512B
E_oss @ 400 V	2.8 µJ - Low stored output capacitance energy minimizes turn-on switching loss in resonant converters
trr / Q_rr	140 ns / 0.7 µC - Fast, soft reverse recovery reduces voltage overshoot and EMI in bridge-leg commutation
di/dt ruggedness	900 A/µs - Withstands aggressive hard-switching transitions without latch-up in PFC boost stages
T_j max	150 °C - Enables operation in sealed enclosures with limited airflow, e.g., telecom rectifiers

Pinout & Package

IPD65R420CFDAATMA1 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal enhancement. The package meets RoHS and halogen-free requirements per JEDEC MS-012.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to PCB ground plane and current-sense resistor
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V min for full enhancement, 6.4 V plateau ensures stable Miller region control
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside - must be soldered to large copper area (>6 cm²) for R_thJC = 1.5 K/W thermal performance

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 140 ns, Q_rr = 0.7 µC - Eliminates need for external SiC/Schottky diode in synchronous rectification or bidirectional switches
High commutation ruggedness	900 A/µs di/dt rating - Sustains rapid current reversal during ZVS transitions without failure in LLC resonant tanks
Low-loss FOM	R_DS(on) × Q_g = 13.44 Ω·nC - Balances conduction and switching loss for optimal efficiency at 100–300 kHz operation
AEC-Q101 qualified	Qualified for automotive powertrain and charging systems - validated for temperature cycling, HTRB, and UIS stress
Green packaging	Pb-free plating and halogen-free mold compound - Complies with EU RoHS Directive 2011/65/EU and JESD22-A110

Applications

Server Power Supply

Industrial UPS

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter delivering 12 V/275 A output.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS, managing 400 V DC-link voltage.

Use Value: 2.8 µJ E_oss reduces turn-on loss by 35% vs. standard SJ-MOSFETs, enabling >96% peak efficiency at full load.

Use Scenario: Boost PFC stage in 5 kVA online UPS with 400 V DC-bus and 50 Hz line input.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 12 A RMS input current with 100 kHz PWM.

Use Value: 900 A/µs di/dt ruggedness prevents failure during AC zero-crossing commutation, improving system MTBF by 2.1×.

On-Board EV Charger

Telecom Rectifier

Use Scenario: Isolated DC-DC stage in 11 kW bi-directional OBC converting 400 V battery to 400 V HV bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in phase-shifted full-bridge topology.

Use Value: Ultra-fast body diode (140 ns trr) enables soft-recovery during reverse conduction, reducing EMI filter size by 40%.

Use Scenario: Primary switch in 3 kW telecom rectifier with 380 V DC output and active PFC + forward converter.

IC Role / Device Role / Timing Role: Main switching transistor in high-efficiency forward converter operating at 200 kHz.

Use Value: 150 °C T_j max and 1.5 K/W R_thJC allow derated operation at 85 °C ambient without forced cooling, cutting fan BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R420CFDXKSA1	Same die, TO-220FP package - higher R_thJA (45 K/W vs. 35 K/W), no exposed drain pad	Suitable for through-hole prototyping or lower-power (<2 kW) designs with heatsink mounting	Select when mechanical mounting constraints favor through-hole or when thermal interface to heatsink is more controllable than PCB copper area
STP65N6F6	650 V, 0.055 Ω R_DS(on), but Q_g = 72 nC and trr = 220 ns - higher switching loss, no AEC-Q101	Better for hard-switched flyback or non-resonant PFC where conduction loss dominates	Choose only if cost sensitivity outweighs efficiency targets and automotive qualification is not required

Compared with IPP65R420CFDXKSA1 and STP65N6F6, IPD65R420CFDAATMA1 delivers superior ZVS efficiency via lower E_oss and faster trr, while its DPAK thermal design enables compact, fanless industrial layouts - making it optimal for high-density resonant power conversion where board space and thermal management are critical.

Availability

IPD65R420CFDAATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant MOSFETs.

Supply support for IPD65R420CFDAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and wafer fabs in Dresden and Villach.

The CoolMOS™ CFDA product line was engineered specifically for high-frequency resonant and soft-switching topologies in datacenter, industrial, and EV infrastructure, emphasizing ultra-low E_oss, fast body diode recovery, and robust commutation behavior.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies a 3.4 Ω gate resistor for dynamic characterization (td(on)/tr/trr). For stable operation at 200–300 kHz, a 5–10 Ω series gate resistor is recommended to dampen ringing while maintaining <20 ns rise time. Values above 15 Ω increase switching loss and risk incomplete turn-on due to Miller plateau effects.

Can IPD65R420CFDAATMA1 replace standard 650 V MOSFETs in existing PFC designs?

Yes - it is a direct drop-in replacement for TO-252-packaged 650 V SJ-MOSFETs with identical pinout and voltage rating. However, its lower Q_g and faster trr may require minor gate driver tuning (e.g., reduced RG) and EMI filter review due to steeper dv/dt edges.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - its 140 ns trr and 0.7 µC Q_rr enable clean, soft reverse recovery during dead-time conduction. In practice, it replaces discrete Schottky diodes in secondary-side synchronous rectifiers up to 200 kHz, reducing forward voltage drop and thermal stress without requiring external snubbers.

Does this part support paralleling for higher current capability?

Yes - its positive R_DS(on) temperature coefficient (0.983 Ω @ 150°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors. Derating to ≤70% of total rated current per device is advised for thermal margin.

IPD65R420CFDAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 345µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R420CFDAATMA1 FAQ

1.How can I place an order for IPD65R420CFDAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R420CFDAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R420CFDAATMA1 reliable?

The price and inventory of IPD65R420CFDAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R420CFDAATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R420CFDAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R420CFDAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R420CFDAATMA1?

IPD65R420CFDAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R420CFDAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R420CFDAATMA1?

For technical support, including IPD65R420CFDAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R420CFDAATMA1 requirements.

6.How does Aetrix verify that IPD65R420CFDAATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R420CFDAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R420CFDAATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R420CFDAATMA1?

All IPD65R420CFDAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R420CFDAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R420CFDAATMA1 part is unused and in its original packaging.

Return procedure for IPD65R420CFDAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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