Infineon Technologies IPD65R420CFDATMA2

Overview

IPD65R420CFDATMA2 from Infineon Technologies is a 650 V, 12.5 A ultra-fast body diode CoolMOS™ CFD7 power MOSFET in TO-220FP package, featuring 420 mΩ R_DS(on), 100% avalanche-rated operation, and optimized for resonant switching in PFC and LLC stages of industrial SMPS. It delivers low conduction and switching losses in high-frequency hard- and soft-switching topologies.

For engineers reviewing the IPD65R420CFDATMA2 datasheet, IPD65R420CFDATMA2 pinout, IPD65R420CFDATMA2 application, or IPD65R420CFDATMA2 equivalent, key selection criteria include its 650 V V_DS, 420 mΩ R_DS(on) at V_GS = 10 V, 100% unclamped inductive switching (UIS) rating, ultra-low Q_rr (38 nC), and integrated fast-recovery body diode with t_rr = 45 ns - critical for ZVS/ZCS design validation and EMI reduction.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology, combining superjunction charge compensation with an optimized intrinsic body diode for simultaneous low R_DS(on) × Q_g and ultra-low Q_rr. Its gate threshold voltage (V_GS(th)) is 3.5 V (min), enabling robust drive compatibility with standard 12 V gate drivers.

The MOSFET supports hard-switching up to 100 kHz and resonant operation beyond 300 kHz, with thermal resistance R_thJC = 1.2 K/W and isolation voltage V_ISO = 2500 V_rms (1 min), making it suitable for isolated industrial power supplies requiring reinforced insulation and long-term reliability under partial discharge stress.

Key Specifications

Pinout & Package

IPD65R420CFDATMA2 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct heatsink mounting without insulating washers while maintaining creepage/clearance compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with STP65N6F7 and IXTH12N65X2, IPD65R420CFDATMA2 uniquely combines low R_DS(on), ultra-low Q_rr, and certified reinforced isolation in a compact TO-220FP package - delivering superior efficiency, reduced EMI, and simplified safety-compliant layout in space-constrained industrial power systems.

Availability

IPD65R420CFDATMA2 is available at Aetrix Electronics and suitable for industrial PFC boost stages, LLC resonant DC-DC converters, and server-grade AC/DC power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPD65R420CFDATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability resonant and hard-switching power conversion in industrial, server, and telecom applications where low Q_rr, rugged UIS performance, and reinforced isolation are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 150°C. Continuous operation at this limit requires strict thermal design: R_thJC = 1.2 K/W and R_thCA ≤ 1.8 K/W to maintain T_j ≤ 150°C at I_D = 12.5 A. Derating curves in the datasheet specify linear current reduction above 100°C case temperature.

Does IPD65R420CFDATMA2 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 3.5 V (min) and exhibits no significant Miller plateau instability. A gate drive of 0 V to 12 V is sufficient; applying –5 V is unnecessary and not recommended per Infineon's application notes for CFD7 series.

Can this MOSFET replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes - with minor gate drive tuning. IPD65R420CFDATMA2 offers lower R_DS(on) and Q_rr than C3/C6 equivalents (e.g., IPD65R600C6), but its lower gate charge (Q_g = 32 nC) may cause faster dv/dt; adding a small gate resistor (e.g., 5–10 Ω) is advised to maintain EMI compliance.

Is the TO-220FP package compatible with automated through-hole insertion equipment?

Yes. The TO-220FP variant uses standard lead pitch (2.54 mm) and lead form compatible with industry-standard wave soldering and selective soldering fixtures. Its insulated tab eliminates need for post-assembly insulator installation, supporting fully automated production flow.