Infineon Technologies IPD85P04P4L06ATMA2

Overview

IPD85P04P4L06ATMA2 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -40 V V_DS, 6.4 mΩ R_DS(on) at V_GS = -10 V and I_D = -85 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It serves as a high-current load switch in automotive body control modules, battery disconnect circuits, and reverse-polarity protection.

For engineers reviewing the IPD85P04P4L06ATMA2 datasheet, IPD85P04P4L06ATMA2 pinout, IPD85P04P4L06ATMA2 application, or IPD85P04P4L06ATMA2 equivalent, key selection criteria include its -85 A continuous drain rating at T_C = 25 °C, 1.7 K/W R_thJC, 100% avalanche tested capability, and PG-TO252-3-313 surface-mount package with exposed drain tab.

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in P-channel configurations. Its gate threshold voltage range of -1.2 V to -2.2 V enables direct drive from 3.3 V/5 V logic controllers without level shifting.

The integrated body diode exhibits 1.3 V V_SD at -85 A and 56 ns t_rr, supporting synchronous rectification and freewheeling in DC-DC converters and motor drivers where controlled reverse recovery is critical.

Key Specifications

Pinout & Package

IPD85P04P4L06ATMA2 uses the PG-TO252-3-313 package: surface-mount, thermally enhanced DPAK variant with exposed drain tab (pin 2) for low-inductance, high-current PCB connection. The plastic body meets RoHS and MSL1 reflow standards (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current switching applications.

Compared with IRF4905PbF and STP85PF55, IPD85P04P4L06ATMA2 delivers superior thermal performance (1.7 K/W), automotive qualification, and tighter R_DS(on) tolerance-enabling smaller PCB area, higher reliability in harsh environments, and elimination of external gate drivers.

Availability

IPD85P04P4L06ATMA2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial power distribution, battery management systems, and reverse polarity protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD85P04P4L06ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive and industrial 12–24 V systems where logic-level drive and thermal robustness are mandatory.

FAQ

What is the maximum safe operating temperature for IPD85P04P4L06ATMA2?

The device supports continuous operation up to +175 °C junction temperature, verified per AEC-Q101 stress tests. Case temperature must be limited to ≤100 °C to sustain -66 A continuous current, based on its 1.7 K/W R_thJC and thermal derating curves in the datasheet.

Does IPD85P04P4L06ATMA2 require a gate resistor for stability?

A gate resistor of 3.5 Ω is specified in the datasheet for dynamic characterization (e.g., t_d(on), t_r). For most applications, a 10–47 Ω resistor is recommended to dampen ringing and control dV/dt, especially when driving inductive loads or paralleling multiple devices.

Can this MOSFET replace an N-channel high-side switch in existing designs?

Yes-its P-channel topology and logic-level gate enable direct substitution in high-side configurations without bootstrap circuitry. However, note its negative V_GS control polarity and ensure gate driver can sink sufficient current to discharge the 104 nC total gate charge within required switching times.

Is the drain tab electrically isolated from the PCB ground plane?

No-the drain tab (pin 2) is internally connected to the MOSFET's drain terminal and must be soldered to a dedicated, non-grounded copper pour. If isolation is required, a thermally conductive but electrically insulating pad (e.g., ceramic or polyimide) must be used between tab and PCB.