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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S404ATMA2

Name: IPD90N06S404ATMA2
Brand: Infineon Technologies
SKU: IPD90N06S404ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S404ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S404ATMA2.pdf

Description:: MOSFET N-CH 60V 90A TO252-31

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Product details

Overview

IPD90N06S404ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 3.8 mΩ R_DS(on) at 10 V V_GS, and 90 A continuous drain current at T_C = 25 °C. It features 100% single-pulse avalanche testing (331 mJ), 175 °C maximum junction temperature, and integrated freewheeling diode with 0.95 V typical V_SD at 90 A - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPD90N06S404ATMA2 datasheet, IPD90N06S404ATMA2 pinout, IPD90N06S404ATMA2 application, or IPD90N06S404ATMA2 equivalent, key selection criteria include its MSL1 reflow compatibility (260 °C peak), low gate charge (Q_g = 128 nC max), high pulsed current capability (360 A), and thermal resistance (R_thJC = 1.0 K/W) critical for thermally constrained automotive power stages.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 5.4 V gate plateau voltage supports stable Miller region control during hard-switching.

The integrated Schottky-like body diode delivers fast reverse recovery (t_rr = 125 ns typ., Q_rr = 110 nC) and low forward voltage (V_SD = 0.95 V @ 90 A), reducing commutation losses in synchronous rectification and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 24 V nominal automotive bus with 2.5× voltage margin against load-dump transients.
R_DS(on) max	3.8 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 90 A, critical for compact heatsink designs.
I_D continuous	90 A @ T_C = 25 °C - Sustains full-rated current with minimal derating up to 100 °C case temperature.
E_AS	331 mJ - Withstands single-pulse inductive energy without failure in motor phase-leg or solenoid drive.
Q_g total	128 nC max - Determines gate driver power requirement; enables efficient 100 kHz+ PWM operation with moderate gate resistance.
t_r/t_f	70 ns / 5 ns - Fast switching reduces overlap loss; fall time <10 ns supports zero-voltage switching (ZVS) auxiliary circuits.
V_SD	0.95 V @ I_F = 90 A - Low body diode forward drop cuts freewheeling loss by ~30% vs. standard silicon MOSFETs.

Pinout & Package

IPD90N06S404ATMA2 is housed in PG-TO252-3-11 (DPAK) package: surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <130 nC charge for full turn-on; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed metal tab - primary thermal path; must be soldered to ≥6 cm² copper pour for R_thJA = 40 K/W.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit passes single-pulse E_AS = 331 mJ test - guarantees ruggedness in inductive switching without external snubbers.
MSL1 reflow rating	Withstands JEDEC J-STD-020-compliant 260 °C peak reflow profile - eliminates moisture sensitivity handling concerns.
Green product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU - meets Tier-1 automotive supply chain requirements.
Optimized body diode	Q_rr = 110 nC and t_rr = 125 ns enable reduced EMI and lower diode recovery loss in bidirectional topologies.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with forced ZVS.

Use Value: 3.8 mΩ R_DS(on) and 0.95 V V_SD reduce conduction loss by 42% vs. legacy MOSFETs, enabling >96% peak efficiency.

Use Scenario: Three-phase inverter driving 3 kW brushless DC motor in column-assist EPS system.

IC Role / Device Role / Timing Role: Low-side power switch with fast 5 ns fall time for precise torque ripple control.

Use Value: 175 °C T_j rating and 1.0 K/W R_thJC allow sustained 90 A operation in sealed motor housing without active cooling.

On-Board Charger (OBC) Input Stage

12 V Automotive Lighting Control

Use Scenario: Active clamp flyback primary switch in 3.3 kW OBC PFC + isolation stage.

IC Role / Device Role / Timing Role: Main power switch handling 600 V transient clamping and 90 A peak current pulses.

Use Value: 331 mJ E_AS withstands repeated clamp energy without degradation, eliminating need for external TVS.

Use Scenario: High-current LED headlamp dimming via PWM-controlled high-side switch.

IC Role / Device Role / Timing Role: Load switch with integrated body diode for inductive kickback suppression.

Use Value: 0.95 V V_SD limits heat generation during 100% duty-cycle operation, enabling compact 2-layer PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB90N06S4-04	PG-TO263-3 package; identical die, higher R_thJC (1.2 K/W); same R_DS(on), Q_g, and ratings.	Better suited for through-hole or high-power board-level heatsinking; less compact than DPAK.	Select when mechanical mounting requires TO-263 footprint or when higher thermal mass is needed for burst-load handling.
STL90D60M2	60 V, 90 A, R_DS(on) = 4.2 mΩ; different gate charge profile (Q_g = 145 nC); non-AEC-Q101 rated.	Limited to industrial/commercial use; lacks automotive qualification and avalanche test guarantee.	Acceptable only for cost-sensitive non-automotive applications where AEC compliance and ruggedness are not required.

Compared with IPB90N06S4-04 and STL90D60M2, IPD90N06S404ATMA2 offers optimal balance of automotive qualification, DPAK form factor, and lowest thermal resistance - making it preferred for space-constrained, safety-critical 12 V/24 V power stages.

Availability

IPD90N06S404ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across extended production lifecycles.

Supply support for IPD90N06S404ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V and 24 V automotive power conversion - emphasizing low R_DS(on), fast switching, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPD90N06S404ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement with margin; gate drivers must limit overshoot using RC snubbers or active clamping to avoid exceeding this rating during switching transients.

Does IPD90N06S404ATMA2 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz PWM at 90 A, a 3.5 Ω resistor is validated in the datasheet (t_d(on) = 30 ns, t_r = 70 ns). Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses proportionally to Q_g.

Can IPD90N06S404ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical thermal paths; use Kelvin source connections and individual gate resistors to avoid dynamic imbalance during turn-on/turn-off.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated diode is rated for 90 A continuous forward current and 360 A pulsed current, with 0.95 V typical V_SD at 90 A and 25 °C. Thermal design must account for diode self-heating; at 175 °C T_j, V_SD rises to ~1.3 V, increasing conduction loss by ~35%.

IPD90N06S404ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S404ATMA2 FAQ

1.How can I place an order for IPD90N06S404ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S404ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S404ATMA2 reliable?

The price and inventory of IPD90N06S404ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S404ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD90N06S404ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S404ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S404ATMA2?

IPD90N06S404ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S404ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S404ATMA2?

For technical support, including IPD90N06S404ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S404ATMA2 requirements.

6.How does Aetrix verify that IPD90N06S404ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S404ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S404ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD90N06S404ATMA2?

All IPD90N06S404ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S404ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S404ATMA2 part is unused and in its original packaging.

Return procedure for IPD90N06S404ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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