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Infineon Technologies IPD90N06S4L03ATMA2

Name: IPD90N06S4L03ATMA2
Brand: Infineon Technologies
SKU: IPD90N06S4L03ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S4L03ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S4L03ATMA2.pdf

Description:: MOSFET N-CH 60V 90A TO252-31

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Product details

Overview

IPD90N06S4L03ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 90 A continuous drain current at T_C = 25 °C, and ultra-low 3.5 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPD90N06S4L03ATMA2 datasheet, IPD90N06S4L03ATMA2 pinout, IPD90N06S4L03ATMA2 application, or IPD90N06S4L03ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (331 mJ), thermal resistance (R_thJC = 1.0 K/W), and diode forward voltage (V_SD = 0.95 V at 90 A).

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V–48 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, while the 133–170 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.

The integrated body diode exhibits fast reverse recovery (t_rr = 50 ns, Q_rr = 80 nC) and low forward voltage (0.6–1.3 V), reducing commutation losses in synchronous rectification and H-bridge configurations. Thermal design is enabled by its 1.0 K/W junction-to-case resistance and MSL1 reflow rating up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V nominal bus systems with 25 % safety margin against transients
R_DS(on) max @ V_GS=10 V	3.5 mΩ - enables ≤2.8 W conduction loss at 90 A, critical for thermally constrained modules
I_D continuous @ T_C=25°C	90 A - defined by bondwire limit; requires PCB copper area ≥6 cm² for rated performance
E_AS (single pulse)	331 mJ - withstands inductive turn-off surges in motor phase-legs without external snubbers
Q_g total	133–170 nC - determines gate driver power requirement and switching speed trade-off
V_GS(th)	1.2–2.2 V - ensures reliable turn-on with standard microcontroller GPIOs and reduces shoot-through risk
t_r/t_f	6 ns / 20 ns - enables <100 ns total switching transition, minimizing overlap loss in hard-switched topologies
V_SD @ I_F=90 A	0.95 V typ - lowers freewheeling loss vs. discrete Schottky solutions in compact 12 V starter-generator inverters

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad on bottom side for thermal conduction. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; requires <170 nC charge to fully enhance; sensitive to ESD (±16 V max)
Pin 2 (Drain)	High-side power path	Connected to PCB copper pour for heat dissipation; electrically tied to exposed metal tab
Pin 3 (Source)	Reference node	Serves as return path for gate drive loop and load current; must be low-inductance layout

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% unclamped inductive switching (UIS) tested	Guarantees ruggedness under worst-case short-circuit and inductive load conditions
R_thJC = 1.0 K/W	Enables direct thermal coupling to heatsink via soldered drain pad; simplifies thermal modeling
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU; no lead, mercury, cadmium, hexavalent chromium, PBB, PBDE
Optimized for 4.5 V gate drive	R_DS(on) = 3.7–5.5 mΩ at V_GS = 4.5 V supports 5 V MCU control without level-shifting

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12 V–48 V bidirectional buck-boost stage in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET with fast body diode recovery.

Use Value: 3.5 mΩ R_DS(on) and 50 ns t_rr reduce conduction + commutation loss by >18 % vs. legacy T1 devices.

Use Scenario: Three-phase inverter driving 300–500 W brushless motor in column-assist EPS.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg with integrated freewheeling path.

Use Value: 0.95 V V_SD at 90 A cuts diode conduction loss by 35 % compared to discrete SiC Schottky solution.

Onboard Charger (OBC) Input Stage

12 V Battery Management Systems

Use Scenario: Active rectification and soft-start control in AC/DC front-end PFC stage.

IC Role / Device Role / Timing Role: High-current switch handling 90 A peak line-frequency current pulses.

Use Value: 331 mJ E_AS allows safe operation during grid transient events without derating.

Use Scenario: Load-dump protection and reverse polarity safeguard in 12 V battery-fed ECUs.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor in smart high-side power switch IC.

Use Value: 3.5 mΩ R_DS(on) limits voltage drop to <320 mV at 90 A, preserving system efficiency during cranking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V (lower), Q_g = 190 nC (higher), TO-263 package	Higher thermal mass but larger footprint; less suitable for space-constrained DPAK layouts	Prefer when board area allows TO-263 and lowest possible conduction loss dominates
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V (higher), Q_g = 110 nC (lower), SO-8 package	Lower gate charge eases drive but higher R_DS(on) increases thermal load above 40 A	Prefer for lower-current (<50 A), high-frequency (>500 kHz) SMPS where switching loss dominates

Compared with STL220N6F7 and IRF7470PBF, IPD90N06S4L03ATMA2 delivers optimal balance of low R_DS(on), moderate Q_g, AEC-Q101 compliance, and DPAK thermal scalability - making it the preferred choice for 48 V automotive power stages requiring both reliability and density.

Availability

IPD90N06S4L03ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and onboard charger input stages requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD90N06S4L03ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V–48 V automotive power conversion and motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPD90N06S4L03ATMA2?

The absolute maximum gate-source voltage is ±16 V, as specified in the datasheet's "Maximum ratings" table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤12 V with a Zener diode or active gate driver limiting, especially during hot-plug or ESD events.

Does IPD90N06S4L03ATMA2 require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 90 A switching at 100 kHz, a 3.5 Ω resistor is used in the reference test circuit (per datasheet page 3). Actual value depends on driver capability and layout inductance; typical range is 2.2–10 Ω for balancing switching speed and ringing suppression.

Can IPD90N06S4L03ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see page 4 curve "R_DS(on) = f(T_j)") enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature rise across devices.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the drain (Pin 2) is directly connected to the exposed metal tab on the underside of the PG-TO252-3-11 package. This tab must be soldered to a dedicated, non-isolated copper pour tied to the high-side power net. Electrical isolation requires insulating thermal interface material and careful layer stack-up design.

IPD90N06S4L03ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S4L03ATMA2 FAQ

1.How can I place an order for IPD90N06S4L03ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S4L03ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S4L03ATMA2 reliable?

The price and inventory of IPD90N06S4L03ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S4L03ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD90N06S4L03ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S4L03ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S4L03ATMA2?

IPD90N06S4L03ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S4L03ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S4L03ATMA2?

For technical support, including IPD90N06S4L03ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S4L03ATMA2 requirements.

6.How does Aetrix verify that IPD90N06S4L03ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S4L03ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S4L03ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD90N06S4L03ATMA2?

All IPD90N06S4L03ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S4L03ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S4L03ATMA2 part is unused and in its original packaging.

Return procedure for IPD90N06S4L03ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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