Infineon Technologies IPD90N06S4L05ATMA2

Overview

IPD90N06S4L05ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 4.6 mΩ R_DS(on) at 10 V_GS, and 90 A continuous drain current at T_C = 25°C. It features 100% avalanche testing, 175°C operation, and ultra-low on-resistance optimized for automotive power switching in motor control and DC-DC converters.

For engineers reviewing the IPD90N06S4L05ATMA2 datasheet, IPD90N06S4L05ATMA2 pinout, IPD90N06S4L05ATMA2 application, or IPD90N06S4L05ATMA2 equivalent, key selection criteria include its 4.6 mΩ R_DS(on) at 10 V_GS, 135 mJ single-pulse avalanche energy, 1.4 K/W R_thJC, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, and its 83–110 nC total gate charge supports efficient high-frequency PWM operation in synchronous rectification and load switch applications.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 90 A and 36 ns reverse recovery time, enabling reliable freewheeling in inductive loads. Thermal design is supported by a validated 1.4 K/W junction-to-case resistance and defined PCB cooling requirements (6 cm² copper area on FR4).

Key Specifications

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7 and IRF1405ZLPbF, IPD90N06S4L05ATMA2 delivers optimal balance of low R_DS(on), AEC-Q101 compliance, and moderate gate charge-making it the preferred choice for space-constrained, thermally demanding automotive power stages requiring long-term reliability.

Availability

IPD90N06S4L05ATMA2 is available at Aetrix Electronics and suitable for automotive motor control, battery disconnect systems, DC-DC converter primary switches, and electric power steering H-bridges requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD90N06S4L05ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor drive applications operating up to 175°C junction temperature.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPD90N06S4L05ATMA2 supports continuous operation up to +175°C junction temperature, as confirmed by AEC-Q101 stress testing and thermal characterization. Derating curves in the datasheet define safe I_D limits versus case temperature, with 90 A permitted only at T_C ≤ 25°C and 80 A at T_C = 100°C.

Is this MOSFET suitable for 3.3 V logic-level gate drive?

Yes-the gate threshold voltage ranges from 1.2 V to 2.2 V, and R_DS(on) is specified at 5.3 mΩ with 4.5 V_GS. At 3.3 V_GS, it achieves partial enhancement suitable for low-duty-cycle or low-current applications, but full 90 A conduction requires ≥4.5 V drive per datasheet test conditions.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode with 90 A continuous forward current rating, 0.6–1.3 V forward voltage at 90 A and 25°C, and 36 ns reverse recovery time under 100 A/µs di/dt. These values are measured and guaranteed per datasheet page 3, supporting freewheeling in half-bridge and synchronous rectifier topologies.

How does the PG-TO252-3-11 package differ from standard DPAK in thermal performance?

The PG-TO252-3-11 variant uses an optimized internal die attach and copper clip construction, achieving 1.4 K/W R_thJC-a 15–20% improvement over legacy DPAK packages. This is validated with a defined 6 cm² PCB copper area per JEDEC JESD51-14, enabling higher power density in automotive PCB layouts.