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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S4L06ATMA2

Name: IPD90N06S4L06ATMA2
Brand: Infineon Technologies
SKU: IPD90N06S4L06ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S4L06ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S4L06ATMA2.pdf

Description:: MOSFET N-CH 60V 90A TO252-31

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Product details

Overview

IPD90N06S4L06ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET with 60 V V_DS, 6.3 mΩ R_DS(on) at V_GS = 10 V and 90 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, features 100% avalanche testing, and is housed in PG-TO252-3-11 (DPAK) package for high-power motor control and DC-DC converter applications.

For engineers reviewing the IPD90N06S4L06ATMA2 datasheet, IPD90N06S4L06ATMA2 pinout, IPD90N06S4L06ATMA2 application, or IPD90N06S4L06ATMA2 equivalent, key selection criteria include its ultra-low R_DS(on), AEC-Q101 qualification, 175 °C junction rating, and integrated body diode with 0.95 V typical V_SD at 90 A.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate technology optimized for low conduction loss and fast switching in high-current 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust drive compatibility with standard logic-level controllers, while its 58–75 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a co-packaged freewheeling diode with 39 ns reverse recovery time and 38 nC Q_rr, enabling synchronous rectification and flyback energy management. Thermal resistance R_thJC is 1.9 K/W, allowing high power dissipation on minimal PCB copper area (6 cm²).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching.
R_DS(on) max	6.3 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 90 A, critical for thermal management in compact modules.
I_D cont	90 A at T_C = 25 °C - Supports high-current motor phases and starter solenoid drivers without external heatsinking.
E_AS	67 mJ - Confirmed single-pulse avalanche ruggedness ensures reliability during inductive load turn-off transients.
Q_g	58–75 nC - Determines gate driver power requirement and switching speed trade-off in hard-switched converters.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs, reducing need for level-shifting circuitry.
V_SD	0.6–1.3 V at I_F = 90 A - Low forward drop minimizes power loss in freewheeling paths of H-bridge and buck converters.

Pinout & Package

IPD90N06S4L06ATMA2 is packaged in PG-TO252-3-11 (DPAK), a surface-mount power package with exposed drain pad for thermal conduction to PCB copper. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires ≤16 V absolute max; low input capacitance (C_iss = 4370–5680 pF) eases driver selection.
Pin 2 (Drain)	High-side power terminal	Connected to PCB copper pour for thermal dissipation; electrically tied to exposed metal tab; carries full load current.
Pin 3 (Source)	Reference node	Serves as return path for drain current and gate drive loop; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JESD22 standards.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 67 mJ, ensuring field reliability in inductive switching applications.
MSL1 reflow rating	Withstands peak solder reflow temperatures up to 260 °C, compatible with standard lead-free assembly processes.
Ultra-low R_DS(on)	6.3 mΩ at 10 V drive enables >97% efficiency in 12 V, 50 A DC-DC stages with minimal thermal derating.
Integrated body diode	Optimized for fast recovery (t_rr = 39 ns) and low Q_rr (38 nC), reducing switching losses in synchronous rectifier topologies.

Applications

Automotive Body Control Module (BCM)

12 V Automotive DC-DC Converter

Use Scenario: Driving high-current loads such as headlamp ballasts, seat motors, and HVAC actuators in centralized vehicle control units.

IC Role / Device Role / Timing Role: High-side load switch providing overcurrent and short-circuit protection via current-sense feedback and thermal shutdown.

Use Value: 90 A rating and 175 °C operation allow direct integration into sealed BCM enclosures without forced air cooling.

Use Scenario: Synchronous rectification in 12 V output stage of bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast t_rr and low V_SD to replace Schottky diodes and improve light-load efficiency.

Use Value: 0.95 V typical V_SD at 90 A reduces conduction loss by >40% versus discrete 40 V Schottky alternatives.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle Starter Solenoid Interface

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters requiring high pulse current capability and thermal resilience.

IC Role / Device Role / Timing Role: Power switch in H-bridge topology handling 360 A pulsed drain current during torque assist events.

Use Value: 360 A I_D,pulse and 67 mJ E_AS ensure safe operation during stall and sudden direction reversal.

Use Scenario: Solid-state replacement for electromechanical starter solenoids in heavy-duty trucks and buses.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch controlling 12 V starter motor engagement with precise timing and zero contact bounce.

Use Value: 6.3 mΩ R_DS(on) limits voltage drop to <0.6 V at 90 A, preserving cranking voltage margin during cold starts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N6LF6AG	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 82 nC; AEC-Q101 qualified; same DPAK package.	Higher gate charge increases driver loss; slightly lower R_DS(on) yields marginal conduction gain.	Prefer when lowest possible R_DS(on) is prioritized over switching speed and gate drive simplicity.
IRF1405ZLPbF	R_DS(on) = 5.3 mΩ @ 10 V; non-automotive grade; TO-220 package; no avalanche rating.	Lacks AEC-Q101 and 100% avalanche test; unsuitable for safety-critical automotive use.	Select only for cost-sensitive industrial or consumer applications where automotive qualification is not required.

Compared with STL110N6LF6AG and IRF1405ZLPbF, IPD90N06S4L06ATMA2 delivers optimal balance of low R_DS(on), moderate Q_g, full automotive qualification, and proven avalanche ruggedness-making it preferred for mission-critical 12 V/24 V power stages.

Availability

IPD90N06S4L06ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, electric power steering inverters, 12 V DC-DC converters, and commercial vehicle starter interfaces requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPD90N06S4L06ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 family, engineered specifically for high-efficiency, high-reliability power conversion in automotive 12 V/24 V systems-including engine control, chassis, and electrification subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPD90N06S4L06ATMA2?

The absolute maximum gate-source voltage is ±16 V. Exceeding this limit risks permanent gate oxide damage. Recommended operating range is –10 V to +10 V for reliable switching; negative V_GS enhances turn-off immunity against dV/dt-induced false triggering in noisy automotive environments.

Does IPD90N06S4L06ATMA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control switching speed and suppress ringing. For 90 A operation with 12 V gate drive, a 3.5 Ω resistor is used in reference designs (per datasheet test conditions). Values between 2.2 Ω and 10 Ω are typical, balancing EMI reduction against switching loss and driver thermal load.

Can IPD90N06S4L06ATMA2 be used in parallel configurations?

Yes, but only with careful layout and gate drive design. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) provides inherent current sharing. Parallel operation requires matched gate resistors, symmetrical PCB traces, and shared thermal interface to avoid thermal runaway.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 90 A continuous forward current and 360 A pulsed current. Its 39 ns t_rr and low Q_rr make it suitable for synchronous rectification in buck and half-bridge topologies up to ~200 kHz, provided adequate gate drive timing avoids shoot-through.

IPD90N06S4L06ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S4L06ATMA2 FAQ

1.How can I place an order for IPD90N06S4L06ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S4L06ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S4L06ATMA2 reliable?

The price and inventory of IPD90N06S4L06ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S4L06ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD90N06S4L06ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S4L06ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S4L06ATMA2?

IPD90N06S4L06ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S4L06ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S4L06ATMA2?

For technical support, including IPD90N06S4L06ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S4L06ATMA2 requirements.

6.How does Aetrix verify that IPD90N06S4L06ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S4L06ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S4L06ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD90N06S4L06ATMA2?

All IPD90N06S4L06ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S4L06ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S4L06ATMA2 part is unused and in its original packaging.

Return procedure for IPD90N06S4L06ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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