Infineon Technologies IPD95R450PFD7ATMA1

Overview

IPD95R450PFD7ATMA1 from Infineon Technologies is a 950 V, 450 mΩ superjunction MOSFET in DPAK (PG-TO252-3) package with integrated ultra-fast body diode, optimized for LLC and ZVS resonant topologies in industrial SMPS and high-voltage lighting power supplies. It delivers 13.3 A continuous drain current at T_C = 25 °C, 3.0 µJ E_oss at 500 V, and 0.72 µC Q_rr, enabling hard commutation robustness and improved full-load efficiency.

For engineers reviewing the IPD95R450PFD7ATMA1 datasheet, IPD95R450PFD7ATMA1 pinout, IPD95R450PFD7ATMA1 application, or IPD95R450PFD7ATMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr), body diode diF/dt (1300 A/µs), R_DS(on) temperature stability, gate charge (Q_g = 43 nC), and thermal resistance (R_thJC = 1.20 °C/W).

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure with field-plated gate trench design to achieve simultaneous low R_DS(on) × E_oss figure-of-merit and ultra-low Q_rr. Its 3 V gate threshold voltage (V_GS(th)) with ±0.5 V variation ensures stable turn-on across temperature and process corners.

The integrated body diode supports high diF/dt (1300 A/µs) and exhibits 149 ns t_rr at 400 V reverse voltage and 100 A/µs commutation rate. The device is fully qualified per JEDEC JESD47 for industrial applications and rated for 150 °C maximum junction temperature.

Key Specifications

Pinout & Package

IPD95R450PFD7ATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal performance. Pin 1 is Gate, Pin 2 is Drain (connected to metal tab), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW95R450PFD7 and IPP95R450PFD7, IPD95R450PFD7ATMA1 provides optimal balance of SMD manufacturability, thermal performance (1.20 °C/W), and board-area efficiency-making it the preferred choice for compact, high-efficiency 200–400 W industrial SMPS.

Availability

IPD95R450PFD7ATMA1 is available at Aetrix Electronics and suitable for industrial SMPS, high-voltage LED drivers, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPD95R450PFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability resonant-mode power conversion in lighting and industrial power supplies up to 950 V.

FAQ

What is the maximum continuous drain current for IPD95R450PFD7ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 8.4 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This value is limited by junction temperature constraints (T_j,max = 150 °C) and thermal resistance (R_thJC = 1.20 °C/W). Derating follows the curve in Diagram 1, where P_tot decreases linearly above 25 °C case temperature.

Does IPD95R450PFD7ATMA1 require a negative gate voltage for safe turn-off?

No. The device specifies a gate-source voltage range of −20 V to +20 V (static) and −30 V to +30 V (dynamic), but stable turn-off is achieved with 0 V gate drive. Its 3 V V_GS(th) and low gate leakage (<100 nA) allow reliable off-state hold without negative bias, simplifying gate driver design in cost-sensitive industrial applications.

How does the integrated body diode compare to external SiC Schottky diodes in LLC applications?

The integrated diode achieves Q_rr = 0.72 µC and t_rr = 149 ns-comparable to mid-performance 650 V SiC Schottkys-but with co-packaged thermal coupling and reduced layout parasitics. Unlike discrete SiC diodes, it eliminates bond-wire inductance and interconnect losses, improving ZVS consistency at 250–300 kHz without requiring additional snubbers.

Is IPD95R450PFD7ATMA1 suitable for use in PFC stages with 230 VAC input?

Yes. With 950 V V_DS rating and 120 V/ns dv/dt ruggedness, it safely handles 340 V peak input plus 100 V transients common in 230 VAC PFC designs. Its low Q_g (43 nC) and optimized C_iss/C_oss ratio reduce switching loss at 65–100 kHz, and the 3 V V_GS(th) ensures clean turn-on even with gate drive droop under heavy load.